| 1. |
- Cardinali, G., et al.
(författare)
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Low-Threshold AlGaN-based UVB VCSELs enabled by post-growth cavity detuning
- 2022
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 121:10
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Tidskriftsartikel (refereegranskat)abstract
- The performance of vertical-cavity surface-emitting lasers (VCSELs) is strongly dependent on the spectral detuning between the gain peak and the resonance wavelength. Here, we use angle-resolved photoluminescence spectroscopy to investigate the emission properties of AlGaN-based VCSELs emitting in the ultraviolet-B spectral range with different detuning between the photoluminescence peak of the quantum-wells and the resonance wavelength. Accurate setting of the cavity length, and thereby the resonance wavelength, is accomplished by using doping-selective electrochemical etching of AlGaN sacrificial layers for substrate removal combined with deposition of dielectric spacer layers. By matching the resonance wavelength to the quantum-wells photoluminescence peak, a threshold power density of 0.4 MW/cm2 was achieved, and this was possible only for smooth etched surfaces with a root mean square roughness below 2 nm. These results demonstrate the importance of accurate cavity length control and surface smoothness to achieve low-Threshold AlGaN-based ultraviolet VCSELs.
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| 2. |
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| 3. |
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| 4. |
- Haglund, Åsa, 1976, et al.
(författare)
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UV VCSELs – this is the way
- 2022
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Ingår i: 9th Workshop on Physics and Technology of Semiconductor Lasers.
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Konferensbidrag (refereegranskat)
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| 5. |
- Hjort, Filip, 1991, et al.
(författare)
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A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser
- 2021
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Ingår i: ACS Photonics. - : American Chemical Society (ACS). - 2330-4022. ; 8:1, s. 135-141
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Tidskriftsartikel (refereegranskat)abstract
- Ultraviolet light is essential for disinfection, fluorescence excitation, curing, and medical treatment. An ultraviolet light source with the small footprint and excellent optical characteristics of vertical-cavity surface-emitting lasers (VCSELs) may enable new applications in all these areas. Until now, there have only been a few demonstrations of ultraviolet-emitting VCSELs, mainly optically pumped, and all with low Al-content AlGaN cavities and emission near the bandgap of GaN (360 nm). Here, we demonstrate an optically pumped VCSEL emitting in the UVB spectrum (280-320 nm) at room temperature, having an Al0.60Ga0.40N cavity between two dielectric distributed Bragg reflectors. The double dielectric distributed Bragg reflector design was realized by substrate removal using electrochemical etching. Our method is further extendable to even shorter wavelengths, which would establish a technology that enables VCSEL emission from UVA (320-400 nm) to UVC (<280 nm).
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