| 1. |
- Hägg, Sara, et al.
(författare)
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Molecular Phenotypes of Coronary Artery Disease : The Stockholm Atherosclerosis Gene Expression (STAGE) Study
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- BACKGROUNDBy offering a comprehensive view of the molecular underpinnings of pathology, high-dimensional data have the potential to revolutionize the diagnosis and management of complex disorders such as coronary artery disease (CAD). To identify molecular phenotypes of CAD, we performed multi organ gene expression profiling of subjects enrolled in the Stockholm Atherosclerosis Gene Expression (STAGE) study.METHODSAtherosclerotic and unaffected arterial wall, liver, skeletal muscle, and mediastinal fat biopsies were obtained during coronary artery bypass grafting from 114 well-characterized CAD patients. RNA samples were isolated, and 278 transcription profiles were obtained using Affymetrix HG-U133_Plus_2 GeneChips.RESULTSThe most prominent molecular phenotype of the CAD patients was represented by 733 genes in mediastinal fat, which were involved in extracellular matrix organization, response to stress and regulation of programmed cell death. Other aspects of this phenotype were shared with liver (e.g., oxidoreductase activity), skeletal muscle (insulin-like growth factor binding), and atherosclerotic arterial wall (cell motility and adhesion, fatty acid metabolism). In addition, the activity of 400 genes exclusively in mediastinal fat was associated with the extent of coronary stenosis and atherosclerosis. Immune-cell activation in mediastinal fat defined CAD patients with poor blood glucose control and prolonged hospitalization.CONCLUSIONSThe molecular phenotype of mediastinal fat appears to be central in CAD and should be useful for early identification of CAD risk.
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| 2. |
- Moubah, Reda, et al.
(författare)
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Origin of the anomalous temperature dependence of coercivity in soft ferromagnets
- 2014
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 116:5
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Tidskriftsartikel (refereegranskat)abstract
- We report on the origin of the anomalous temperature dependence of coercivity observed in some soft ferromagnets by studying the magnetic and electronic properties of FeZr films doped using ion implantation by H, He, B, C, and N. The anomalous increase of the coercivity with temperature was observed only in the C- and B-doped samples. Using x-ray photoelectron spectroscopy, we show that the anomalous behavior of the coercivity coincides with the occurrence of an electron charge transfer for those implanted samples. The origin of the anomaly is discussed in terms of (i) magnetic softness, (ii) nature of the Fe-C and -B covalent bonds, and (iii) large charge transfer.
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| 3. |
- Moubah, Reda, et al.
(författare)
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Soft Room-Temperature Ferromagnetism of Carbon-Implanted Amorphous Fe93Zr7 Films
- 2013
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Ingår i: APPL PHYS EXPRESS. - : Japan Society of Applied Physics. - 1882-0778. ; 6:5, s. 053001-
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Tidskriftsartikel (refereegranskat)abstract
- We report on the effect of carbon implantation on the structural, electronic, and magnetic properties of Fe93Zr7 (FeZr) amorphous films. Extended X-ray absorption fine structure measurements on (FeZr)(100-x)C-x (x = 0, 5.5, and 11) indicate the incorporation of carbon in the FeZr matrix, with an increase of the Fe-Fe distance by implanting carbon. X-ray photoelectron spectroscopy measurements reveal the creation of Fe-C bonds after implantation. A significant enhancement of the Curie temperature and decrease of the coercivity are observed in the carbon-implanted films. Moreover, the non collinear ferromagnetism of the as-grown FeZr film diminishes upon carbon implantation.
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| 4. |
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| 5. |
- Razpet, A., et al.
(författare)
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Fabrication of high-density ordered nanoarrays in silicon dioxide by MeV ion track lithography
- 2005
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 97:4
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Tidskriftsartikel (refereegranskat)abstract
- Self-assembled nanoporous alumina films were employed as masks for MeV ion track lithography. Films with thickness of 2 mum and pore diameters of 30 and 70 nm were attached to thermally grown SiO2 covered with a thin gold layer. The samples were aligned with respect to the beam by detecting backscattered He+ ions with the initial energy of 2 MeV. The ordered pattern of the porous alumina films was successfully transferred into SiO2 after irradiation with a 4 MeV Cl2+ beam at fluence of 10(14) ions/cm(2), followed by chemical etching in a 5% HF solution.
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| 6. |
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| 7. |
- Razpet, A., et al.
(författare)
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Ion transmission and characterization of ordered nanoporous alumina
- 2004
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Ingår i: Nuclear Instruments and Methods in Physics Research Section B. - : Elsevier BV. - 0168-583X .- 1872-9584. ; B:222, s. 593-600
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Tidskriftsartikel (refereegranskat)abstract
- Ordered nanoporous alumina samples with a pore diameter of 70 nm, an array period of 100 nm and several thicknesses were considered as possible masks for pattern transfer by MeV ion lithography. A simple procedure for the sample alignment using a 2 MeV He+ beam was utilized. The energy distributions of transmitted ions as well as backscattering spectra were studied in aligned and non-aligned orientations. The best transmission, comparable to the relative surface area covered by pores, was reached for 2 mum thick samples and was independent on ion species. Although the transmission for thicker membranes was generally lower, it significantly depended on the quality of each individual sample. The presented ion beam technique can therefore be used as a tool for the characterization of porous materials. The acceptance angle for transmission through pores and the effective atomic density of samples can be obtained from the experimental data and it is shown that nanoporous alumina can be used as a mask for MeV ion lithography.
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| 8. |
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| 9. |
- Rubel, Marek, et al.
(författare)
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Metallic mirrors for plasma diagnosis in current and future reactors : tests for ITER and DEMO
- 2017
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Ingår i: Physica Scripta. - : IOP PUBLISHING LTD. - 0031-8949 .- 1402-4896. ; T170
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Tidskriftsartikel (refereegranskat)abstract
- Optical spectroscopy and imaging diagnostics in next-step fusion devices will rely on metallic mirrors. The performance of mirrors is studied in present-day tokamaks and in laboratory systems. This work deals with comprehensive tests of mirrors: (a) exposed in JET with the ITER-like wall (JET-ILW); (b) irradiated by hydrogen, helium and heavy ions to simulate transmutation effects and damage which may be induced by neutrons under reactor conditions. The emphasis has been on surface modification: deposited layers on JET mirrors from the divertor and on near-surface damage in ion-irradiated targets. Analyses performed with ion beams, microscopy and spectro-photometry techniques have revealed: (i) the formation of multiple co-deposited layers; (ii) flaking-off of the layers already in the tokamak, despite the small thickness (130-200 nm) of the granular deposits; (iii) deposition of dust particles (0.2-5 mu m, 300-400 mm(-2)) composed mainly of tungsten and nickel; (iv) that the stepwise irradiation of up to 30 dpa by heavy ions (Mo, Zr or Nb) caused only small changes in the optical performance, in some cases even improving reflectivity due to the removal of the surface oxide layer; (v) significant reflectivity degradation related to bubble formation caused by the irradiation with He and H ions.
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| 10. |
- Aberg, D., et al.
(författare)
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Nitrogen deactivation by implantation-induced defects in 4H-SiC epitaxial layers
- 2001
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 78:19, s. 2908-2910
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Tidskriftsartikel (refereegranskat)abstract
- Ion implantation causes free charge carrier reduction due to damage in the crystalline structure. Here, nitrogen-doped 4H silicon carbide (n type) epitaxial layers have been investigated using low ion doses in order to resolve the initial stage of the charge carrier reduction. It was found that the reduction of free carriers per ion-induced vacancy increases with increasing nitrogen content. Nitrogen is suggested to be deactivated through reaction with migrating point defects, and silicon vacancies or alternatively interstitials are proposed as the most likely candidates.
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