| 1. |
- Schleeh, Joel, 1986, et al.
(författare)
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Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition
- 2011
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Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, 22-26 May 2011. - 1092-8669. - 9781457717536
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Konferensbidrag (refereegranskat)abstract
- InGaAs/InAlAs/InP HEMTs (InP HEMTs) passivated by Al2O3 atomic layer deposition (ALD) demonstrated improved DC performance compared to Si3N4 plasma enhanced chemical vapour deposition (PECVD). DC measurements have been performed on 130 nm gate-length devices before and after passivation. An increase in maximum drain current density of 20% and extrinsic transconductance of 30% were observed after both ALD and PECVD device passivation. In comparison to PECVD passivated InP HEMTs, ALD passivated devices demonstrated a full suppression of a kink in the I-V characteristics associated with surface traps.
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| 2. |
- Cha, Eunjung, 1985, et al.
(författare)
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Cryogenic low-noise InP HEMTs: A source-drain distance study
- 2016
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Ingår i: 2016 Compound Semiconductor Week, CSW 2016. - 9781509019649 ; , s. Article number 7528576-
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Konferensbidrag (refereegranskat)abstract
- The scaling effect of the source-drain distance was investigated in order to improve the performance of low-noise InP HEMTs at cryogenic temperatures 4-15 K. The highest dc transconductance at an operating temperature of 4.8 K and low bias power was achieved at a source-drain distance of 1.4 mu m. The extracted HEMT minimum noise temperature was 0.9 K at 5.8 GHz for a 3-stage 4-8 GHz hybrid low-noise amplifier at 10 K.
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| 3. |
- Nilsson, Per-Åke, 1964, et al.
(författare)
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An InP MMIC process optimized for low noise at Cryo
- 2014
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Ingår i: Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. - 1550-8781. - 9781479936229
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Konferensbidrag (refereegranskat)abstract
- An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at cryogenic temperature. The amplifiers from the process are working up to 100 GHz. The processed wafers are 4" and can carry more than 4000 3-stage units. For a significant number of 6-20 GHz 3-stage LNAs we have measured an average noise temperature of 5.8 K at ambient temperature of 10 K, state of the art in this frequency range, and 66.3 K at 300K. Associated gain was 35.9 dB (10K) and 33.2 dB (300 K). The standard deviation at room temperature for 47 LNAs was 1.5 K for the noise and 0.3 dB for the gain.
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| 4. |
- Nilsson, Per-Åke, 1964, et al.
(författare)
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Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process
- 2016
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Ingår i: Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 6-9 December 2015. ; 1, s. Art. no. 7411746-
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Konferensbidrag (refereegranskat)abstract
- An indium phosphide HEMT MMIC process was developed for ultralow noise amplifiers (LNAs) at cryogenic temperatures. The process was run on 4” wafers and utilized 130 nm gate-length HEMTs. Several wide band LNAs were made in a frequency range between 1 GHz and 100 GHz. A Ka band LNA had a minimum noise temperature of 10 K and a gain of 35 dB.
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| 5. |
- Schleeh, Joel, 1986, et al.
(författare)
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Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature
- 2012
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
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Konferensbidrag (refereegranskat)abstract
- A 0.5-13 GHz cryogenic MMIC low-noise amplifier (LNA) was designed and fabricated using a 130 nm InP HEMT process. A packaged LNA has been measured at both 300 K and 15 K. At 300 K the measured minimum noise temperature was 48 K at 7 GHz. At 15 K the measured minimum noise temperature was 3 K at 7 GHz and below 7 K within the entire 0.5-13 GHz band. The gain was between 34 dB and 40 dB at 300 K and between 38 dB and 44 dB at 4 K.
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| 6. |
- Schleeh, Joel, 1986, et al.
(författare)
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Cryogenic LNAs for SKA band 2 to 5
- 2017
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781509063604 ; , s. 164-167
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Konferensbidrag (refereegranskat)abstract
- Four ultra-low noise cryogenic MMIC LNAs suitable for the Square Kilometer Array (SKA) band 2 to 5 (0.95-13.8 GHz) have been designed, fabricated, packaged and tested. The LNAs are based on 4×50, 8×50 and 16×50 μm HEMTs, designed for stable cryogenic operation, allowing the combination of good noise performance and return loss. The lowest noise temperatures measured in the four bands were 1.0 K, 1.2 K, 1.6 K and 2.6 K, respectively.
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| 7. |
- Schleeh, Joel, 1986, et al.
(författare)
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Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz
- 2012
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Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 33:5, s. 664-666
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Tidskriftsartikel (refereegranskat)abstract
- We present in this letter an InGaAs/InAlAs/InP high-electron-mobility transistor (InP HEMT) with record noise temperature at very low dc power dissipation. By minimizing parasitic contact and sheet resistances and the gate current, a 130-nm-gate-length InP HEMT was optimized for cryogenic low-noise operation. When integrated in a 4- to 8-GHz three-stage hybrid low-noise amplifier operating at 10 K, a noise temperature of 1.2 K +/- 1.3 K at 5.2 GHz was measured. The gain of the amplifier across the entire band was 44 dB, consuming only 4.2 mW of dc power. The extracted minimum noise temperature of the InP HEMT was 1 K at 6 GHz.
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