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- Santos, Paulo, et al.
(författare)
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Theory of a carbon-oxygen-hydrogen recombination center in n-type Si
- 2017
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Ingår i: Physica Status Solidi (a) applications and materials science. - : John Wiley & Sons. - 1862-6300 .- 1862-6319. ; 214:7
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Tidskriftsartikel (refereegranskat)abstract
- We have recently found that in-diffusion of hydrogen into n-type Si crystals containing oxygen and carbon impurities can result in the formation of powerful recombination centers (M. Vaqueiro-Contreras et al., to appear in PSS RRL). Here, we describe a combination of first-principles calculations and electrical measurements to investigate the composition, structure, electrical activity and recombination mechanism of a carbon-oxygen-hydrogen complex (COH) in Si. We found a defect comprising a carbon-oxygen complex connected to an H atom whose location depends on the charge state of the complex, and showing a calculated acceptor level at Ev+0.3eV, a few meV away from the observations. Bistable carbon-oxygen-hydrogen complex in silicon. Carbon, oxygen, hydrogen, and silicon atoms are shown in gray, red, black, and white, respectively
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