| 1. |
- Hassanli, Kourosh, et al.
(författare)
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A compact, low-power, and fast pulse-width modulation based digital pixel sensor with no bias circuit
- 2016
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Ingår i: Sensors and Actuators A-Physical. - : ELSEVIER SCIENCE SA. - 0924-4247 .- 1873-3069. ; 244, s. 243-251
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Tidskriftsartikel (refereegranskat)abstract
- A high-speed and compact in-pixel light-to-time converter (LTC), with low power consumption and wide dynamic range is presented. By using the proposed LTC, a digital pixel sensor (DPS) based on a pulse width modulation (PWM) scheme has been designed and fabricated in a standard 180-nm, single-poly, six-metal complementary metal oxide semiconductor (CMOS) technology. The prototype chip consists of a 16 x 16 pixel array with an individual pixel size of 21 x 21 mu m(2) and a fill factor of 39% in the 180-nm CMOS technology. Experimental results show that the circuit operates at supply voltages down to 800 mV and achieves an overall dynamic range of more than 140 dB. The power consumption at 800 mV supply and room light intensity is approximately 2.85 nW. (C) 2016 Elsevier B.V. All rights reserved.
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| 2. |
- Hassanli, Kourosh, et al.
(författare)
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A highly sensitive, low-power, and wide dynamic range CMOS digital pixel sensor
- 2015
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Ingår i: Sensors and Actuators A-Physical. - : ELSEVIER SCIENCE SA. - 0924-4247 .- 1873-3069. ; 236, s. 82-91
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Tidskriftsartikel (refereegranskat)abstract
- This paper proposes a new pixel-level light-to-frequency converter (LFC) that operates at a low supply voltage, and also offers low power consumption, low area, wide dynamic range, and high sensitivity. By using the proposed LFC, a digital pixel sensor (DPS) based on a pulse-frequency-modulation (PFM) scheme has been designed and fabricated. The prototype chip, including an array of 16 x 16 DPS with pixel size of 23 x 23 mu m(2) and 33.5% fill factor, was fabricated in a standard 180-nm CMOS technology. Experimental results show that the pixel operates with maintained output characteristics at supply voltages down to 1 V. The pixel sensor achieves an overall dynamic range of more than 142 dB and consumes 103 nW per pixel at a supply voltage of 1V at room light intensity. The sensitivity of the LFC is very high at the lower end of the light intensity compared to the higher end which enables the ability to capture clear images. (C) 2015 Elsevier B.V. All rights reserved.
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| 3. |
- Hassanli, Kourosh, et al.
(författare)
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A low-power wide tuning-range CMOS current-controlled oscillator
- 2016
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Ingår i: Integration. - : ELSEVIER SCIENCE BV. - 0167-9260 .- 1872-7522. ; 55, s. 57-66
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Tidskriftsartikel (refereegranskat)abstract
- This paper presents a low-power, small-size, wide tuning-range, and low supply voltage CMOS current controlled oscillator (CCO) for current converter applications. The proposed oscillator is designed and fabricated in a standard 180-nm, single-poly, six-metal CMOS technology. Experimental results show that the oscillation frequency of the CCO is tunable from 30 Hz to 970 MHz by adjusting the control current in the range of 100 fA to 10 mu A, giving an overall dynamic range of over 160 dB. The operation of the circuit is nearly independent of the power supply voltage and the circuit operates at supply voltages as low as 800 my. Also, at this voltage, with control currents in the range of sub-nano-amperes, the power consumption is about 30 nW. These features are promising in sensory and biomedical applications. The chip area is only 8.8 x 11.5 mu m(2). (C) 2016 Elsevier B.V. All rights reserved.
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| 4. |
- Hassanli, Kourosh, et al.
(författare)
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High Resolution Digital Imager Based on Time Multiplexing Algorithm
- 2017
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Ingår i: IEEE Sensors Journal. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 1530-437X .- 1558-1748. ; 17:9, s. 2831-2840
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, a new high-resolution digital imager based on a time multiplexing scheme is proposed. The imager produces a 256-grayscale image through capturing 256 successive frames that each belongs to a specific luminance range. Each pixel includes a 1-b analog-to-digital converter (ADC) and a single bit static memory to improve the fill factor. The in-pixel ADC is designed as a compact and fast converter to achieve a high-resolution and video-rate image sensor. The proposed sensor is designed and implemented in a standard 180-nm CMOS technology. The imager achieves an overall dynamic range of over 140 dB at video rate imaging. The pixel pitch is 18.3 mu m and the fill factor is about 48%. The circuit operates at a supply voltage as low as 800 mV. At this supply voltage and at video rate imaging, its power consumption is about 4.33 nW. The proposed imager can directly perform some pre-processing algorithms, such as image segmentation and binarization. Additionally, the proposed method transfers the memory and process units of the pixels to the external of the sensor array so it provides a suitable structure for designing high-resolution, wide dynamic range, and fast general-purpose image sensors.
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