| 1. |
- Cao, Shun, et al.
(författare)
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Enhancing single photon emission through quasi-bound states in the continuum of monolithic hexagonal boron nitride metasurface
- 2021
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Ingår i: Journal of Physics. - : IOP Publishing. - 2515-7639. ; 4:3
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Tidskriftsartikel (refereegranskat)abstract
- A patterned structure of monolithic hexagonal boron nitride (hBN) on a glass substrate, which can enhance the emission of the embedded single photon emitters (SPEs), is useful for onchip single-photon sources of high-quality. Here, we design and demonstrate a monolithic hBN metasurface with quasi-bound states in the continuum mode at emission wavelength with ultrahigh Q values to enhance fluorescence emission of SPEs in hBN. Because of ultrahigh electric field enhancement inside the proposed hBN metasurface, an ultrahigh Purcell factor (3.3 x 10(4)) is achieved. In addition, the Purcell factor can also be strongly enhanced in most part of the hBN structure, which makes the hBN metasurface suitable for e.g. monolithic quantum photonics.
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| 2. |
- Cao, Shun, et al.
(författare)
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High-temperature ultra-broad UV–MIR high-efficiency absorber based on double ring-shaped titanium nitride resonators
- 2021
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Ingår i: Optics Communications. - : Elsevier B.V.. - 0030-4018 .- 1873-0310. ; 485
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Tidskriftsartikel (refereegranskat)abstract
- An ultrabroad absorber based on double-ring-shaped titanium nitride (TiN) nanoresonators, which can work in high temperatures, is proposed and numerically studied. The absorber with some optimal parameters exhibits an averaged absorption of 94.6% in the range of 200–4000 nm (from ultraviolet to mid-infrared) and a band from 200–3518 nm having an absorption > 90%. We have demonstrated in detail the physical mechanisms of the ultra-broad absorption, including the dielectric lossy property of TiN material itself in shorter wavelengths and plasmonic resonances caused by the metallic property of TiN nano-resonators in longer wavelengths. In addition, the absorber shows polarization independent and wide-angle acceptance. Another absorber with double TiN nano-rings of different heights has flatter and higher absorption efficiency (more than 95% absorption) at 200–2860 nm waveband. These properties make the proposed absorbers based on TiN has great potentials in many applications, such as light trapping, photovoltaics, thermal emitters.
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| 3. |
- He, Shudong, et al.
(författare)
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In Silico Identification and in Vitro Analysis of B and T-Cell Epitopes of the Black Turtle Bean (Phaseolus Vulgaris L.) Lectin
- 2018
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Ingår i: Cellular Physiology and Biochemistry. - : S. Karger AG. - 1015-8987 .- 1421-9778. ; , s. 1600-1614
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Tidskriftsartikel (refereegranskat)abstract
- Background/Aims: The incidence of lectin allergic disease is increasing in recent decades, and definitive treatment is still lacking. Identification of B and T-cell epitopes of allergen will be useful in understanding the allergen antibody responses as well as aiding in the development of new diagnostics and therapy regimens for lectin poisoning. In the current study, we mainly addressed these questions. Methods: Three-dimensional structure of the lectin from black turtle bean (Phaseolus vulgaris L.) was modeled using the structural template of Phytohemagglutinin from P. vulgaris (PHA-E, PDB ID: 3wcs.1.A) with high identity. The B and T-cell epitopes were screened and identified by immunoinformatics and subsequently validated by ELISA, lymphocyte proliferation and cytokine profile analyses. Results: Seven potential B-cell epitopes (B1 to B7) were identified by sequence and structure based methods, while three T-cell epitopes (T1 to T3) were identified by the predictions of binding score and inhibitory concentration. The epitope peptides were synthesized. Significant IgE binding capability was found in B-cell epitopes (B2, B5, B6 and B7) and T2 (a cryptic B-cell epitope). T1 and T2 induced significant lymphoproliferation, and the release of IL-4 and IL-5 cytokine confirmed the validity of T-cell epitope prediction. Abundant hydrophobic amino acids were found in B-cell epitope and T-cell epitope regions by amino acid analysis. Positively charged amino acids, such as His residue, might be more favored for B-cell epitope. Conclusion: The present approach can be applied for the identification of epitopes in novel allergen proteins and thus for designing diagnostics and therapies in lectin allergy.
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| 4. |
- Chen, Taolue, et al.
(författare)
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A Decision Procedure for Path Feasibility of String Manipulating Programs with Integer Data Type
- 2020
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Ingår i: ATVA 2020. - Cham : Springer Nature. - 9783030591519 - 9783030591526 ; , s. 325-342
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Konferensbidrag (refereegranskat)abstract
- In this paper, we propose a decision procedure for a class of string-manipulating programs which includes not only a wide range of string operations such as concatenation, replaceAll, reverse, and finite transducers, but also those involving the integer data-type such as length, indexof, and substring. To the best of our knowledge, this represents one of the most expressive string constraint languages that is currently known to be decidable. Our decision procedure is based on a variant of cost register automata. We implement the decision procedure, giving rise to a new solver OSTRICH+. We evaluate the performance of OSTRICH+ on a wide range of existing and new benchmarks. The experimental results show that OSTRICH+ is the first string decision procedure capable of tackling finite transducers and integer constraints, whilst its overall performance is comparable with the state-of-the-art string constraint solvers.
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| 5. |
- Geng, Wenping, et al.
(författare)
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Conductive Domain-Wall Temperature Sensors of LiNbO3 Ferroelectric Single-Crystal Thin Films
- 2021
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Ingår i: IEEE Electron Device Letters. - : IEEE. - 0741-3106 .- 1558-0563. ; 42:12, s. 1841-1844
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Tidskriftsartikel (refereegranskat)abstract
- Domain wall current (DWC) plays a key role in storage devices, logic devices and sensors due to its high on-off ratio and nano structure size in the era of nanoelectronics technology. In this work, the DWC of single crystal LiNbO3 thin film was studied by piezoresponse force microscope (PFM) and conducting atomic force microscope (c-AFM). We mainly focus on voltage and temperature dependence of DWC which increases with the voltage and temperatures. Based on this research, the packaged DWC temperature sensor is fabricated and applied in wide temperature range. The existence of domain walls makes the current on-off ratio as high as 103 at the voltage of 15 V. Our study shows that DWC has a negative temperature coefficient (NTC) from 140 K to 500 K. The current increases from 3 pA to 57 μA, which is attributed to the conductivity of switched domain. This work proposes a new type temperature sensor with wide temperature range and high compatibility and sensitivity. In addition, it provides support for harsh environment applications of ferroelectric domain engineering devices.
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| 6. |
- Geng, Wenping, et al.
(författare)
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Permanent charged domain walls under tip-poling engineering
- 2021
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Ingår i: Journal of Materials Chemistry C. - : Royal Society of Chemistry. - 2050-7526 .- 2050-7534. ; 9:44, s. 15797-15803
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Tidskriftsartikel (refereegranskat)abstract
- Charged domain walls (CDWs) have attracted considerable attention owing to their tunable properties related to high-density information storage and nanoelectronics devices. The excellent time endurance of conductivity is a pressing need, which is directly related to the domain stability and boundary conditions. In this study, we propose an effective method to promote the permanent formation of charged domain walls aimed with tip-induced electric fields. The permanent domain structures and CDWs are attributed to the robust stimulus with tip dimensions combined with effective screening conditions. This interesting conductivity near the domain walls is three orders of magnitude higher than the domain inner, and exhibits attractive anti-fatigue properties with the value of ∼60 pA for the duration of more than one month. In addition, the tunable mechanism of CDWs in LiNbO3 thin films is related to carrier gathering near the domain walls for the inclined boundary. These inclined head-to-head domain walls exhibit conductive features only along the negative direction, which can be modulated by the application of a sub-coercive voltage. The results demonstrate the stable manipulation of domain reversal and charged domain walls in LiNbO3 thin films, highlighting them as a critical component, especially for multiple-state logic circuits and potential ferroelectric diode applications in non-volatile memories and nanoelectronics devices.
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