| 1. |
- Bao, M. Q., et al.
(författare)
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A 110-to-147 GHz Frequency Sixtupler in a 130 nm Sige Bicmos Technology
- 2018
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Ingår i: EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference. ; , s. 105-108
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Konferensbidrag (refereegranskat)abstract
- The presented D-band sixtupler consists of a frequency tripler, a frequency doubler, as well as amplifiers. The optimum arrangement for those blocks is investigated. The analysis shows that the tripler should precede the doubler. Furthermore, to extend the bandwidth, an amplifier with an increasing gain versus frequency is applied, to compensate the gain decrease of the tripler. This wideband frequency sixtupler is designed and characterized in a 130 nm SiGe BiCMOS technology. This sixtupler has a bandwidth of 37 GHz (from 110 to 147 GHz), the maximum output power is 4.5 dBm, with a DC power consumption of 310 mW. The maximum power efficiency is 0.9%.
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| 2. |
- Hassona, Ahmed Adel, 1988, et al.
(författare)
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Nongalvanic Generic Packaging Solution Demonstrated in a Fully Integrated D-Band Receiver
- 2020
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Ingår i: IEEE Transactions on Terahertz Science and Technology. - 2156-342X .- 2156-3446. ; 10:3, s. 321-330
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Tidskriftsartikel (refereegranskat)abstract
- This article presents a packaging technique for monolithic microwave integrated circuits (MMIC) demonstrated in a fully integrated receiver (Rx) module at the D -band (110–170 GHz). The solution consists of an MMIC-to-waveguide transition realized using an on-chip probe mounted in the E -plane of a split-block waveguide module. An artificial magnetic conductor structure is implemented to suppress cavity modes and achieve better coupling from the waveguide to the probe. The transition's performance is experimentally verified using a back-to-back test chip, and measurement results show that the proposed packaging solution achieves a low insertion loss of only 0.7 dB and covers a very wide frequency range extending from 105 to 175 GHz. The proposed transition is also integrated with an in-phase/quadrature-phase (I/Q) Rx on the same chip. The Rx is realized in a 250-nm indium phosphide double heterojunction bipolar transistor technology and consists of a low-noise amplifier, an I/Q mixer, and a frequency tripler. Measurement results show that the Rx module achieves an average conversion gain of 23 dB across the frequency range of 110–145 GHz and has an average noise figure of 10.6 dB. The Rx MMIC has a dc power consumption of 440 mW and occupies an area of 1.6 × 1.6 mm 2 . This article addresses one of the main challenges in systems operating above 100 GHz and presents a fully integrated packaging solution that suits large integrated circuits and does not require any galvanic contacts nor impose any limitations on MMIC dimensions.
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| 3. |
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| 4. |
- Strömbeck, Frida, 1990, et al.
(författare)
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A 40 Gbps QAM-16 communication link using a 130 nm SiGe BiCMOS process
- 2022
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 2022-June, s. 1013-1016
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Konferensbidrag (refereegranskat)abstract
- In this work a high data rate transmitter and receiver link is presented using a 130 nm SiGe BiCMOS process. The communication link has demonstrated transmissions up to 40 Gbps QAM-16 at D-band (110-170 GHz) over a one meter polymer microwave fiber (PMF). The peak output power of the transmitter (Tx) is 3 dBm at 135 GHz and the 3-dB bandwidth of both Tx and receiver (Rx) is between 115 - 145 GHz, resulting in a 30 GHz bandwidth. Total chip area for Tx and Rx combined, including pads, is 4.2 mm2.
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| 5. |
- Thanh, Thi Ngoc Do, 1984, et al.
(författare)
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A low-phase noise D-band signal source based on 130 nm SiGe BiCMOS and 0.15 mu m AlGaN/GaN HEMT technologies
- 2019
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Ingår i: International Journal of Microwave and Wireless Technologies. - 1759-0787 .- 1759-0795. ; 11:5-6, s. 456-465
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Tidskriftsartikel (refereegranskat)abstract
- This paper reports on a record-low-phase noise D-band signal source with 5 dBm output power, and 1.3 GHz tuning range. The source is based on the unconventional combination of a fundamental frequency 23 GHz oscillator in 150 nm AlGaN/GaN HEMT technology followed by a 130 nm SiGe BiCMOS MMIC including a sixtupler and an amplifier. The amplifier operates in compression mode as power-limiting amplifier, to equalize the source output power so that it is nearly independent of the oscillator's gate and drain bias voltages used for tuning the frequency of the source. The choice of using a GaN HEMT oscillator is motivated by the need for a low oscillator noise floor, which recently has been demonstrated as a bottle-neck for data rates in wideband millimeter-wave communication systems. The phase noise performance of this signal source is -128 dBc/Hz at 10 MHz-offset. To the best of the authors' knowledge, this result is the lowest reported phase noise of D-band signal source.
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| 6. |
- Vassilev, Vessen, 1969, et al.
(författare)
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Spectrum Efficient D-band Communication Link for Real-time Multi-gigabit Wireless Transmission
- 2018
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781538650677 ; , s. 1523-1526
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Konferensbidrag (refereegranskat)abstract
- This manuscript presents results of wireless real-time data transmission at 143 GHz. The transmitter/receiver (Tx/Rx) front-end circuitry is integrated on a single monolithic microwave integrated circuits (MMICs), realized in a 250-nm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The Tx module shows gain of 12 dB at 143 GHz with output power of -2.3 dBm at 1 dB gain compression. The Rx module has a gain of 15 dB with noise figure (NF) of 13 dB at 143 GHz. The minimum NF of 10 dB is measured at 132 GHz. The Tx/Rx front-end modules were integrated in two radio units to demonstrate a real time wireless data transmission. At a distance of 10 m and using 40 dBi gain antennas, the highest data rate achieved was 5.3 Gbit/s using 64 QAM modulation over a 1 GHz channel with spectrum efficiency of 5bit/s/Hz.
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| 7. |
- Vosoogh, Abbas, 1984, et al.
(författare)
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A Compact Mass-producible E-band Bandpass Filter Based on Multi-layer Waveguide Technology
- 2020
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Ingår i: 14th European Conference on Antennas and Propagation, EuCAP 2020.
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Konferensbidrag (refereegranskat)abstract
- This paper presents the design, implementation and experimental validation of a bandpass filter for high-data rate point-to-point link applications at E-band. The proposed design is developed in multilayer waveguide (MLW) technology, where an air-filled waveguide transmission line is formed by stacking several unconnected thin metal plates. Our MLW bandpass filter is designed by combining low-pass and high-pass filtering structures, and consists of 19 separate metal layers. An array of glide-symmetric holes, which act as an electromagnetic band gap (EBG) structure, are used to prevent any possible field leakage due to the air gaps between the layers. The fabricated filter provides a bandpass from 71.5 to 76 GHz with measured return loss better than 15 dB, and insertion loss better than 1.3 dB. These results confirm the advantages of MLW technology for implementing ultra-compact bandpass filters showing low loss and potential for being mass-produced at millimeter-wave frequencies.
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| 8. |
- Vosoogh, Abbas, 1984, et al.
(författare)
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A Cost-effective D-band Multi-layer Rectangular Waveguide Transmission Line Based on Glide-Symmetric EBG Structure
- 2018
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Ingår i: IET Conference Publications. - : Institution of Engineering and Technology. ; 2018:CP741
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Konferensbidrag (refereegranskat)abstract
- An air-filled multi-layer waveguide (MLW) transmission line with a novel architecture for high-frequency applications is presented. A rectangular waveguide transmission line is formed by stacking several thin metal layers without any electrical and galvanic contact requirement among the layers. A glide-symmetric electromagnetic band gap (EBG) structure is used to package the layers and eliminate any possible leakage. A back-to-back straight line with two right-angle bends is manufactured by use of chemical metal etching, a low-cost and high-precision fabrication technique. The fabricated prototype shows high performance with low measured transmission loss of 0.17 dB/cm at D-band (110 to 170 GHz). The proposed multilayer waveguide (MLW) has the great advantages of low-cost and easy fabrication with a low transmission loss, even for frequencies beyond 100 GHz. The proposed concept could be a good approach to design high-performance passive waveguide components, and also active and passive components integration in mass production at the millimeter wave frequency band.
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| 9. |
- Vosoogh, Abbas, 1984, et al.
(författare)
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An E-band Compact Frequency Division Duplex Radio Front-end Based on Gap Waveguide Technology
- 2019
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Ingår i: 13th European Conference on Antennas and Propagation, EuCAP 2019.
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Konferensbidrag (refereegranskat)abstract
- A compact module consisting of a novel integration of an antenna, a diplexer, and millimeter-wave active circuits for low latency wireless backhaul links working at E-band is presented in this paper. The proposed radio front-end module is built by four distinct layers which are vertically stacked with no electrical contact requirement between them based on gap waveguide technology. A 16×16 corporate-fed slot array antenna is successfully integrated× with a 5th order diplexer, as well as a transmitter (Tx) and a receiver (Rx) monolithic microwave integrated circuits (MMICs) in one package with a novel architecture and a compact form. The integrated radio front-end is able to simultaneously send and receive data by using a frequency division duplex (FDD) transmission scheme at 71-76 GHz and 81-86 GHz bands. A wireless data transmission is successfully demonstrated showing a data rate of 6 Gbit/s using 64 quadrature amplitude modulated (QAM) signal with a spectral efficiency of 4.4 bit/s/Hz. The proposed radio front-end provides the advantages of low loss, high efficiency, compact integration, and a simple mechanical assembly, which makes it a suitable solution for small cell backhaul links.
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| 10. |
- Vosoogh, Abbas, 1984, et al.
(författare)
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Compact Integrated Full-Duplex Gap Waveguide-Based Radio Front End For Multi-Gbit/s Point-to-Point Backhaul Links at E-Band
- 2019
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 67:9, s. 3783-3797
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Tidskriftsartikel (refereegranskat)abstract
- This paper presents the design and realization of a high data rate radio front-end module for point-to-point backhaul links at E-band. The design module consists of four vertically stacked unconnected metal layers without any galvanic and electrical contact requirements among the building blocks, by using gap waveguide technology. The module components are a high-gain array antenna, diplexer, and circuitry consisting of a transmitter (Tx) and a receiver (Rx) monolithic microwave integrated circuits (MMICs) on a carrier board, which is successfully integrated into one package with a novel architecture and a compact form. The diplexer consists of two direct-coupled cavity bandpass filters with channels at 71-76 GHz and 81-86 GHz with a measured return loss of 15 dB and an isolation greater than 50 dB. A wideband 16 x 16 slot array antenna with a measured gain of more than 31 dBi is used to provide high directivity. The measured results show that the packaged transmitter provides a conversion gain of 22 and 20 dB at 76 and 86 GHz, respectively, with an output power of 14 and 16 dBm at 1-dB gain compression point, at the same frequencies. The packaged receiver shows an average conversion gain of 20 dB at 71-76-GHz and 24 dB at 81-86-GHz bands. A real-time wireless data transmission is successfully demonstrated with a data rate of 8 Gbit/s using 32-quadrature amplitude modulated signal over 1.8-GHz channel bandwidth with spectral efficiency of 4.44 bit/s/Hz. The proposed radio front end provides the advantages of low loss, high efficiency, compact integration, and a simple mechanical assembly, which makes it a suitable solution for small-cell backhaul links.
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