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1.
  • Godlewski, M, et al. (författare)
  • Mechanism of intra-shell recombination of transition metal and rare earth ions in nanostructures of II-VI compounds
  • 2004
  • Ingår i: Journal of Alloys and Compounds. - : Elsevier BV. - 0925-8388 .- 1873-4669. ; 380:01-Feb, s. 45-49
  • Tidskriftsartikel (refereegranskat)abstract
    • Based on the results of optically detected magnetic resonance (ODMR) and time-resolved investigations we relate the observed lifetime shortening of intra-shell Mn2+ emission to spin dependent magnetic interactions between localized spins of Mn2+ ions and spins/magnetic moments of free carriers. We show that this mechanism is active both in bulk and in low dimensional structures, such as quantum wells (QWs), quantum dots (QDs) and nanostructures. (C) 2004 Elsevier B.V. All rights reserved.
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2.
  • Tomic, S., et al. (författare)
  • Influence of conduction-band nonparabolicity on electron confinement and effective mass in GaNxAs1−x∕GaAs quantum wells
  • 2004
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 69, s. 245305-
  • Tidskriftsartikel (refereegranskat)abstract
    • We derive an analytical model to describe the conduction-band states of GaNAs-based quantum well structures, including the band anticrossing effect between N resonant states and the conduction-band edge. The predictions of the model are compared to those obtained using a full ten-band k·p model based on the same set of parameters. Both methods are then tested by comparison with the experimentally determined ground- and excited-state interband transition energies of GaNxAs1−x quantum wells of different well widths and N composition x obtained at 300 K and under hydrostatic pressures up to 2.0 GPa . We show that the transition energies can be described by a consistent set of material parameters in all the samples studied, and present how the conduction to valence-band offset ratio varies strongly with x in GaNxAs1−x∕GaAs quantum well structures. We conclude that the model presented can be used to predict the transition energies and electron subband structure of any GaNxAs1−x∕GaAs quantum well with well width between 2 and 25 nm , and N composition x between 1 and 4% , although further work is still required to confirm the optimum choice for the variation of band offset ratio with composition.
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