| 1. |
- Aksyutina, Yu, et al.
(författare)
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Lithium isotopes beyond the drip line
- 2008
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Ingår i: Physics Letters B. - : Elsevier BV. - 0370-2693. ; 666:5, s. 430-434
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Tidskriftsartikel (refereegranskat)abstract
- The unbound isotopes 10Li, 12Li and 13Li have been observed after nucleon-knockout reactions at relativistic energies with 11Li and 14Be beams impinging on a liquid hydrogen target. The channels , and were analysed in the ALADIN-LAND setup at GSI. The 10Li data confirm earlier findings, while the 12Li and 13Li nuclei were observed for the first time. The relative-energy spectrum shows that the ground state of 12Li can be described as a virtual s-state with a scattering length of -13.7(1.6) fm. A broad energy spectrum was found for the channel. Based on the assumption that the relative-energy spectrum is dominated by a correlated background presumably stemming from initial correlations in the 14Be ground-state, evidence for a 13Li resonance at 1.47(31) MeV above the threshold with a width around 2 MeV has been found.
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| 2. |
- Austeng, Dordi, et al.
(författare)
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Incidence of and risk factors for neonatal morbidity after active perinatal care : extremely preterm infants study in Sweden (EXPRESS)
- 2010
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Ingår i: Acta Paediatrica. - : Wiley. - 0803-5253 .- 1651-2227. ; 99:7, s. 978-992
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Tidskriftsartikel (refereegranskat)abstract
- Aims: The aim of this study was to determine the incidence of neonatal morbidity in extremely preterm infants and to identify associated risk factors. Methods: Population based study of infants born before 27 gestational weeks and admitted for neonatal intensive care in Sweden during 2004-2007. Results: Of 638 admitted infants, 141 died. Among these, life support was withdrawn in 55 infants because of anticipation of poor long-term outcome. Of 497 surviving infants, 10% developed severe intraventricular haemorrhage (IVH), 5.7% cystic periventricular leucomalacia (cPVL), 41% septicaemia and 5.8% necrotizing enterocolitis (NEC); 61% had patent ductus arteriosus (PDA) and 34% developed retinopathy of prematurity (ROP) stage >= 3. Eighty-five per cent needed mechanical ventilation and 25% developed severe bronchopulmonary dysplasia (BPD). Forty-seven per cent survived to one year of age without any severe IVH, cPVL, severe ROP, severe BPD or NEC. Tocolysis increased and prolonged mechanical ventilation decreased the chances of survival without these morbidities. Maternal smoking and higher gestational duration were associated with lower risk of severe ROP, whereas PDA and poor growth increased this risk. Conclusion: Half of the infants surviving extremely preterm birth suffered from severe neonatal morbidities. Studies on how to reduce these morbidities and on the long-term health of survivors are warranted.
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| 3. |
- Benson, Mikael, et al.
(författare)
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Interleukin (IL)-6 and IL-8 in children with febrile urinary tract infection and asymptomatic bacteriuria
- 1996
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Ingår i: Journal of Infectious Diseases. - : Oxford University Press (OUP). - 0022-1899 .- 1537-6613. ; 174:5, s. 1080-1084
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Tidskriftsartikel (refereegranskat)abstract
- Urine and serum interleukin (IL)-6 and IL-8 responses were higher in children with febrile urinary tract infection (n = 61) than in those with asymptomatic bacteriuria (n = 39). By univariate analysis, cytokine levels were related to age, sex, reflux, renal scarring, urine leukocytes, C- reactive protein (CRP), erythrocyte sedimentation rate (ESR), and bacterial properties (P fimbriae but not hemolysin). Multivariate modeling showed that urine IL-6 responds were higher in girls than boys, increased with age, and were positively associated with CRP, ESR, serum IL-6, and urine leukocyte counts. The urine IL-8 response was not influenced by age, but it was influenced by P fimbriae and was associated with ESR, CRP, urine leukocytes, and female sex. The results show that cytokine responses to urinary tract infection vary with the severity of infection and that cytokine activation is influenced by a variety of host and bacterial variables.
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| 4. |
- Guzzi, Nicola, et al.
(författare)
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Pseudouridylation of tRNA-Derived Fragments Steers Translational Control in Stem Cells
- 2018
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Ingår i: Cell. - : Elsevier BV. - 0092-8674 .- 1097-4172. ; 173:5, s. 26-1216
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Tidskriftsartikel (refereegranskat)abstract
- Pseudouridylation (Ψ) is the most abundant and widespread type of RNA epigenetic modification in living organisms; however, the biological role of Ψ remains poorly understood. Here, we show that a Ψ-driven posttranscriptional program steers translation control to impact stem cell commitment during early embryogenesis. Mechanistically, the Ψ “writer” PUS7 modifies and activates a novel network of tRNA-derived small fragments (tRFs) targeting the translation initiation complex. PUS7 inactivation in embryonic stem cells impairs tRF-mediated translation regulation, leading to increased protein biosynthesis and defective germ layer specification. Remarkably, dysregulation of this posttranscriptional regulatory circuitry impairs hematopoietic stem cell commitment and is common to aggressive subtypes of human myelodysplastic syndromes. Our findings unveil a critical function of Ψ in directing translation control in stem cells with important implications for development and disease. Translational control in stem cells is orchestrated by pseudouridylation of specific tRNA-derived fragments, impacting stem cell commitment during key developmental processes.
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| 5. |
- Hou, Shuoben, et al.
(författare)
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4H-SiC PIN diode as high temperature multifunction sensor
- 2017
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Ingår i: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016. - : Trans Tech Publications Ltd. - 9783035710434 ; , s. 630-633
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Konferensbidrag (refereegranskat)abstract
- An in-house fabricated 4H-SiC PIN diode that has both optical sensing and temperature sensing functions from room temperature (RT) to 550 ºC is presented. The two sensing functions can be simply converted from one to the other by switching the bias voltage on the diode. The optical responsivity of the diode at 365 nm is 31.8 mA/W at 550 ºC. The temperature sensitivity of the diode is 2.7 mV/ºC at the forward current of 1 μA.
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| 6. |
- Hou, Shuoben, et al.
(författare)
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550 degrees C 4H-SiC p-i-n Photodiode Array With Two-Layer Metallization
- 2016
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Ingår i: IEEE Electron Device Letters. - : IEEE. - 0741-3106 .- 1558-0563. ; 37:12, s. 1594-1596
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Tidskriftsartikel (refereegranskat)abstract
- The p-i-n ultraviolet (UV) photodiodes based on 4H-SiC have been fabricated and characterized from room temperature (RT) to 550 degrees C. Due to bandgap narrowing at higher temperatures, the photocurrent of the photodiode increases by 9 times at 365 nm and reduces by 2.6 times at 275 nm from RT to 550 degrees C. Moreover, a 4H-SiC p-i-n photodiode array has been fabricated. Each column and row of the array is separately connected by two-layer metallization.
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| 7. |
- Hou, Shuoben, et al.
(författare)
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A 4H-SiC BJT as a Switch for On-Chip Integrated UV Photodiode
- 2019
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Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 40:1, s. 51-54
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Tidskriftsartikel (refereegranskat)abstract
- This letter presents the design, fabrication, and characterization of a 4H-SiC n-p-n bipolar junction transistor as a switch controlling an on-chip integrated p-i-n photodiode. The transistor and photodiode share the same epitaxial layers and topside contacts for each terminal. By connecting the collector of the transistor and the anode of the photodiode, the photo current from the photodiode is switched off at low base voltage (cutoff region of the transistor) and switched on at high base voltage (saturation region of the transistor). The transfer voltage of the circuit decreases as the ambient temperature increases (2 mV/degrees C). Both the on-state and off-state current of the circuit have a positive temperature coefficient and the on/off ratio is >80 at temperature ranged from 25 degrees C to 400 degrees C. It is proposed that the on/off ratio can be increased by similar to 1000 times by adding a light blocking layer on the transistor to reduce light induced off-state current in the circuit.
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| 8. |
- Hou, Shuoben, et al.
(författare)
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A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 degrees C
- 2020
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Ingår i: IEEE Journal of the Electron Devices Society. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 2168-6734. ; 8:1, s. 116-121
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Tidskriftsartikel (refereegranskat)abstract
- An image sensor based on wide band gap silicon carbide (SiC) has the merits of high temperature operation and ultraviolet (UV) detection. To realize a SiC-based image sensor the challenge of opto-electronic on-chip integration of SiC photodetectors and digital electronic circuits must be addressed. Here, we demonstrate a novel SiC image sensor based on our in-house bipolar technology. The sensing part has 256 ( $16\times 16$ ) pixels. The digital circuit part for row and column selection contains two 4-to-16 decoders and one 8-bit counter. The digital circuits are designed in transistor-transistor logic (TTL). The entire circuit has 1959 transistors. It is the first demonstration of SiC opto-electronic on-chip integration. The function of the image sensor up to 400 degrees C has been verified by taking photos of the spatial patterns masked from UV light. The image sensor would play a significant role in UV photography, which has important applications in astronomy, clinics, combustion detection and art.
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| 9. |
- Hou, Shuoben, et al.
(författare)
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High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor
- 2019
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Konferensbidrag (refereegranskat)abstract
- This paper presents our in-house fabricated 4H-SiC n-p-n phototransistors. The wafer mapping of the phototransistor on two wafers shows a mean maximum forward current gain (βFmax) of 100 at 25 ºC. The phototransistor with the highest βFmax of 113 has been characterized from room temperature to 500 ºC. The βFmax drops to 51 at 400 ºC and remains the same at 500 ºC. The photo current gain of the phototransistor is 3.9 at 25 ºC and increases to 14 at 500 ºC under the 365 nm UV light with the optical power of 0.31 mW. The processing of the phototransistor is same to our 4HSiC-based bipolar integrated circuits, so it is a promising candidate for 4H-SiC opto-electronics onchip integration.
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| 10. |
- Hou, Shuoben, et al.
(författare)
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Process Control and Optimization of 4H-SiC Semiconductor Devices and Circuits
- 2019
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Ingår i: Proceedings of the 3rd Electron Devices Technology and Manufacturing, (EDTM) Conference 2019. - : IEEE.
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Konferensbidrag (refereegranskat)abstract
- Processing techniques for 4H-SiC devices and circuits are optimized. The SiC mesa etching process has a variation of < 5% over the wafer. The average n-type contact resistivity is 1.15 × 10-6 Ohm.cm2. The fabricated devices and circuits with one-layer metal interconnect have high yield with no need of chemical-mechanical planarization process. More complex circuits with two-layer metal interconnect achieve high yield by applying chemical-mechanical planarization process.
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