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Träfflista för sökning "WFRF:(Helmersson J) "

Sökning: WFRF:(Helmersson J)

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  • Van Rooij, Antonius J., et al. (författare)
  • A weak scientific basis for gaming disorder : Let us err on the side of caution
  • 2018
  • Ingår i: Journal of Behavioral Addictions. - : Akademiai Kiado Zrt.. - 2062-5871 .- 2063-5303. ; 7:1, s. 1-9
  • Tidskriftsartikel (refereegranskat)abstract
    • We greatly appreciate the care and thought that is evident in the 10 commentaries that discuss our debate paper, the majority of which argued in favor of a formalized ICD-11 gaming disorder. We agree that there are some people whose play of video games is related to life problems. We believe that understanding this population and the nature and severity of the problems they experience should be a focus area for future research. However, moving from research construct to formal disorder requires a much stronger evidence base than we currently have. The burden of evidence and the clinical utility should be extremely high, because there is a genuine risk of abuse of diagnoses. We provide suggestions about the level of evidence that might be required: transparent and preregistered studies, a better demarcation of the subject area that includes a rationale for focusing on gaming particularly versus a more general behavioral addictions concept, the exploration of non-addiction approaches, and the unbiased exploration of clinical approaches that treat potentially underlying issues, such as depressive mood or social anxiety first. We acknowledge there could be benefits to formalizing gaming disorder, many of which were highlighted by colleagues in their commentaries, but we think they do not yet outweigh the wider societal and public health risks involved. Given the gravity of diagnostic classification and its wider societal impact, we urge our colleagues at the WHO to err on the side of caution for now and postpone the formalization.
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3.
  • Aarseth, Espen, et al. (författare)
  • Scholars' open debate paper on the World Health Organization ICD-11 Gaming Disorder proposal
  • 2017
  • Ingår i: Journal of Behavioral Addictions. - : AKADEMIAI KIADO RT. - 2062-5871 .- 2063-5303. ; 6:3, s. 267-270
  • Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
    • Concerns about problematic gaming behaviors deserve our full attention. However, we claim that it is far from clear that these problems can or should be attributed to a new disorder. The empirical basis for a Gaming Disorder proposal, such as in the new ICD-11, suffers from fundamental issues. Our main concerns are the low quality of the research base, the fact that the current operationalization leans too heavily on substance use and gambling criteria, and the lack of consensus on symptomatology and assessment of problematic gaming. The act of formalizing this disorder, even as a proposal, has negative medical, scientific, public-health, societal, and human rights fallout that should be considered. Of particular concern are moral panics around the harm of video gaming. They might result in premature application of diagnosis in the medical community and the treatment of abundant false-positive cases, especially for children and adolescents. Second, research will be locked into a confirmatory approach, rather than an exploration of the boundaries of normal versus pathological. Third, the healthy majority of gamers will be affected negatively. We expect that the premature inclusion of Gaming Disorder as a diagnosis in ICD-11 will cause significant stigma to the millions of children who play video games as a part of a normal, healthy life. At this point, suggesting formal diagnoses and categories is premature: the ICD-11 proposal for Gaming Disorder should be removed to avoid a waste of public health resources as well as to avoid causing harm to healthy video gamers around the world.
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  • Abadei, S., et al. (författare)
  • Microwave properties of tunable capacitors basee on magnetron sputtered ferroelectric Na0.5K0.5NbO3 film on low and high resistivity silicon substrates
  • 2001
  • Ingår i: Integrated Ferroelectrics. - : Informa UK Limited. - 1058-4587 .- 1607-8489. ; 39:1-4, s. 359-366
  • Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
    • In this work, small signal DC voltage dependent dielectric permittivity, loss tangent, and tuneability of magnetron sputtered epitaxial Na0.5K0.5NO3 films are studied experimentally. (100)-oriented Na0.5K0.5NbO3 films are deposited onto SiO2-buffered CMOS grade low resistivity (p = 10-20 cm) and high resistivity (p = 15-45 kcm) silicon substrates. Planar capacitors with 2 or 4 m gaps between electrodes have been fabricated on top of ferroelectric films. These devices have been characterized in the frequency range 1.0 MHz to 50 GHz at temperatures 30 - 300K. Na0.5K0.5NbO3/SiO2/Si structures on high resistivity silicon substrate exhibit C-V performances typical for Metal-Insulator- Semiconductor (MIS) capacitors. At low frequencies, f 1.0 GHz, the large tuneability and large losses are associated with the MIS structure, while at higher microwave frequencies the tuneability is mainly associated with the ferroelectric, film. At 1.0 MHz and room temperature, the tuneability of Na0.5K0.5NbO3/SiO2/Si structures more than 90%, reducing to 10-15 % at 50 GHz. The losses decrease with increasing the DC bias and frequency. A Q-factor more than 15 at 50 GHz is observed. The dielectric permittivity of the Na0.5K0.5NbO3 film is in the range 50-150 at frequencies 0.045-50 GHz. On low resistivity substrate the performance of Na0.5K0.5NbO3 films is completely screened by the high losses in silicon, and the tuneability is negligible. © 2001 Taylor and Francis.
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7.
  • Alami, Jones, et al. (författare)
  • Ion-assisted Physical Vapor Deposition for enhanced film properties on non-flat surfaces
  • 2005
  • Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 23:2, s. 278-280
  • Tidskriftsartikel (refereegranskat)abstract
    • We have synthesized Ta thin films on Si substrates placed along a wall of a 2-cm-deep and 1-cm-wide trench, using both a mostly neutral Ta flux by conventional dc magnetron sputtering (dcMS) and a mostly ionized Ta flux by high-power pulsed magnetron sputtering (HPPMS). Structure of the grown films was evaluated by scanning electron microscopy, transmission electron microscopy, and atomic force microscopy. The Ta thin film grown by HPPMS has a smooth surface and a dense crystalline structure with grains oriented perpendicular to the substrate surface, whereas the film grown by dcMS exhibits a rough surface, pores between the grains, and an inclined columnar structure. The improved homogeneity achieved by HPPMS is a direct consequence of the high ion fraction of sputtered species.
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8.
  • Alami, Jones, et al. (författare)
  • Plasma dynamics in a highly ionized pulsed magnetron discharge
  • 2005
  • Ingår i: Plasma sources science & technology. - : IOP Publishing. - 0963-0252 .- 1361-6595. ; 14:3, s. 525-531
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on electrostatic probe measurements of a high-power pulsed magnetron discharge. Space- and time-dependent characteristics of the plasma parameters are obtained as functions of the process parameters. By applying high-power pulses (peak power of ~0.5 MW), with a pulse-on time of ~100 µs and a repetition frequency of 20 ms, peak electron densities of the order of ~1019 m− 3, i.e. three orders of magnitude higher than for a conventional dc magnetron discharge, are achieved soon after the pulse is switched on. At high sputtering gas pressures (>5 mTorr), a second peak occurs in the electron density curve, hundreds of microseconds after the pulse is switched off. This second peak is mainly due to an ion acoustic wave in the plasma, reflecting off the chamber walls. This is concluded from the time delay between the two peaks in the electron and ion saturation currents, which is shown to be dependent on the chamber dimensions and the sputtering gas composition. Finally, the electron temperature is determined, initially very high but decreasing rapidly as the pulse is turned off. The reduction seen in the electron temperature, close to the etched area of the cathode, is due to cooling by the sputtered metal atoms.
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9.
  • Askari, Sadegh, et al. (författare)
  • Plasma-based processes for planar and 3D surface patterning of functional nanoparticles
  • 2019
  • Ingår i: Journal of nanoparticle research. - : SPRINGER. - 1388-0764 .- 1572-896X. ; 21:11
  • Tidskriftsartikel (refereegranskat)abstract
    • We present a gas-phase process for surface patterning and 3D self-assembly of nanoparticles (NPs) of functional materials such as metals, oxides, and nitrides. The method relies on electrostatic assembly of free-flying NPs with unipolar charge produced in plasma sources. We demonstrate the capability of the process in self-assembly of NPs, with the size in the range 10-60 nm, into arrays of free-standing 3D microstructures with complex morphologies. Considering that the plasma nanoparticle sources are compatible with synthesis of a large library of material NPs, the process introduces a novel approach for 3D printing of various functional NPs, high-precision device integration of NPs on sub-micrometer scales, and large-area parallel surface patterning of NPs.
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