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Sökning: WFRF:(Herlogsson Lars)

  • Resultat 1-10 av 15
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1.
  • Crispin, Xavier, et al. (författare)
  • Polyelectrolyte-Gated Organic Field-Effect Transistors
  • 2010
  • Ingår i: Iontronics. - Boca Raton : CRC Press; Taylor & Francis Group. - 9781439806883 - 9781439806890 ; , s. 193-218
  • Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
    • The field of organic electronics promises exciting new technologies based on inexpensive and mechanically flexible electronic devices. It has progressed over the past three decades to the point of commercial viability and is projected to grow to a 30 billion dollar market by the year 2015. Exploring new applications and device architectures, this book sets the tone for that exploration, gathering a community of experts in this area who are focused on the use of ionic functions to define the principle of operation in polymer devices. The contributors detail relevant technologies based on organic electronics, including polymer electrochromic devices and light-emitting electrochemical cells.
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2.
  • Hamedi, Mahiar, et al. (författare)
  • Fiber-Embedded Electrolyte-Gated Field-Effect Transistors for e-Textiles
  • 2009
  • Ingår i: Advanced Materials. - : Wiley. - 0935-9648 .- 1521-4095. ; 21:5, s. 573-577
  • Tidskriftsartikel (refereegranskat)abstract
    • Electrolyte-gate organic field-effect transistors embedded at the junction of textile microfibers are demonstrated. The fiber transistor operates below I V and delivers large current densities. The transience of the organic thin-film transistors current and the impedance spectroscopy measurements reveal that the channel is formed in two steps.
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3.
  • Herlogsson, Lars, 1975-, et al. (författare)
  • Downscaling of Organic Field-Effect Transistors with a Polyelectrolyte Gate Insulator
  • 2008
  • Ingår i: Advanced Materials. - : Wiley Online. - 0935-9648 .- 1521-4095. ; 20:24, s. 4708-4713
  • Tidskriftsartikel (refereegranskat)abstract
    • A polyelectrolyte is used as gate insulator material in organic field-effect transistors with self-aligned inkjet printed sub–micrometer channels. The small separation of the charges in the electric double layer at the electrolyte-semiconductor interface, which builds up in tens of microseconds, provides a very high transverse electric field in the channel that effectively suppresses short-channel effects at low applied gate voltages.
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4.
  • Herlogsson, Lars, 1975- (författare)
  • Electrolyte-Gated Organic Thin-Film Transistors
  • 2011
  • Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • There has been a remarkable progress in the development of organic electronic materials since the discovery of conducting polymers more than three decades ago. Many of these materials can be processed from solution, in the form as inks. This allows for using traditional high-volume printing techniques for manufacturing of organic electronic devices on various flexible surfaces at low cost. Many of the envisioned applications will use printed batteries, organic solar cells or electromagnetic coupling for powering. This requires that the included devices are power efficient and can operate at low voltages.This thesis is focused on organic thin-film transistors that employ electrolytes as gate insulators. The high capacitance of the electrolyte layers allows the transistors to operate at very low voltages, at only 1 V. Polyanion-gated p-channel transistors and polycation-gated n-channel transistors are demonstrated. The mobile ions in the respective polyelectrolyte are attracted towards the gate electrode during transistor operation, while the polymer ions create a stable interface with the charged semiconductor channel. This suppresses electrochemical doping of the semiconductor bulk, which enables the transistors to fully operate in the field-effect mode. As a result, the transistors display relatively fast switching (≤ 100 µs). Interestingly, the switching speed of the transistors saturates as the channel length is reduced. This deviation from the downscaling rule is explained by that the ionic relaxation in the electrolyte limits the channel formation rather than the electronic transport in the semiconductor. Moreover, both unipolar and complementary integrated circuits based on polyelectrolyte-gated transistors are demonstrated. The complementary circuits operate at supply voltages down to 0.2 V, have a static power consumption of less than 2.5 nW per gate and display signal propagation delays down to 0.26 ms per stage. Hence, polyelectrolyte-gated circuits hold great promise for printed electronics applications driven by low-voltage and low-capacity power sources.
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5.
  • Herlogsson, Lars, et al. (författare)
  • Low-Voltage Polymer Field-Effect Transistors Gated Via a Proton Conductor
  • 2007
  • Ingår i: Advanced Materials. - : Wiley Online. - 0935-9648 .- 1521-4095. ; 19:1, s. 97-
  • Tidskriftsartikel (refereegranskat)abstract
    • Low operating voltages for p-channel organic field-effect transistors (OFETs) can be achieved by using an electrolyte as the gate insulator. However, mobile anions in the electrolyte can lead to undesired electrochemistry in the channel. In order to avoid this, a polyanionic electrolyte is used as the gate insulator. The resulting OFET has operating voltages of less than 1€‰V (see figure) shows fast switching (less than 0.3€‰ms) in ambient atmosphere._x000D_
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6.
  • Herlogsson, Lars, et al. (författare)
  • Low-Voltage Ring Oscillators Based on Polyelectrolyte-Gated Polymer Thin-Film Transistors
  • 2010
  • Ingår i: Advanced Materials. - : Wiley. - 0935-9648 .- 1521-4095. ; 22:1, s. 72-76
  • Tidskriftsartikel (refereegranskat)abstract
    • A polyanionic electrolyte is used as gate insulator in top-gate p-channel polymer thin-film transistors. The high capacitance of the polyelectrolyte film allows the transistors and integrated circuits to operate below 1.5 V. Seven-stage ring oscillators that operate at supply voltages down to 0.9 V and exhibit signal propagation delays as low as 300 µs per stage are reported.
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7.
  • Herlogsson, Lars, 1975-, et al. (författare)
  • Polyelectrolyte-Gated Organic Complementary Circuits Operating at Low Power and Voltage
  • 2011
  • Ingår i: Advanced Materials. - : Wiley-Blackwell. - 0935-9648 .- 1521-4095. ; 23:40, s. 4684-
  • Tidskriftsartikel (refereegranskat)abstract
    • In this work, polyanionic and polycationic electrolytes are used as gate insulators in p- and n-channel thin-film transistors, respectively. These material combinations are motivated by that the mobile ions in the electrolytes will be attracted to the oppositely charged gate electrodes when the transistors are operated in the accumulation mode. The electronic charges in the semiconductor channels will thus be balanced by the polyions, which are effectively immobile and cannot penetrate into the semiconductor bulk and cause electrochemical doping.
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8.
  • Kergoat, Loig, et al. (författare)
  • A Water-Gate Organic Field-Effect Transistor
  • 2010
  • Ingår i: Advanced Materials. - : John Wiley and Sons, Ltd. - 0935-9648 .- 1521-4095. ; 22:23, s. 2565-2569
  • Tidskriftsartikel (refereegranskat)abstract
    • High-dielectric-constant insulators, organic monolayers, and electrolytes have been successfully used to generate organic field-effect transistors operating at low voltages. Here, we report on a device gated with pure water. By replacing the gate dielectric by a simple water droplet, we produce a transistor that entirely operates in the field-effect mode of operation at voltages lower than 1V. This result creates opportunities for sensor applications using water-gated devices as transducing medium.
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9.
  • Kergoat, Loig, et al. (författare)
  • Tuning the threshold voltage in electrolyte-gated organic field-effect transistors
  • 2012
  • Ingår i: Proceedings of the National Academy of Sciences of the United States of America. - : National Academy of Sciences. - 0027-8424 .- 1091-6490. ; 109:22, s. 8394-8399
  • Tidskriftsartikel (refereegranskat)abstract
    • Low-voltage organic field-effect transistors (OFETs) promise for low power consumption logic circuits. To enhance the efficiency of the logic circuits, the control of the threshold voltage of the transistors are based on is crucial. We report the systematic control of the threshold voltage of electrolyte-gated OFETs by using various gate metals. The influence of the work function of the metal is investigated in metal-electrolyte-organic semiconductor diodes and electrolyte-gated OFETs. A good correlation is found between the flat-band potential and the threshold voltage. The possibility to tune the threshold voltage over half the potential range applied and to obtain depletion-like (positive threshold voltage) and enhancement (negative threshold voltage) transistors is of great interest when integrating these transistors in logic circuits. The combination of a depletion-like and enhancement transistor leads to a clear improvement of the noise margins in depleted-load unipolar inverters.
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10.
  • Kostić, Milos, et al. (författare)
  • Design and Development of OECT Logic Circuits for Electrical Stimulation Applications
  • 2022
  • Ingår i: Applied Sciences. - : MDPI. - 2076-3417. ; 12:8
  • Tidskriftsartikel (refereegranskat)abstract
    • This paper presents the first successful implementation of fully printed electronics for flexible and wearable smart multi-pad stimulation electrodes intended for use in medical, sports and lifestyle applications. The smart multi-pad electrodes with the electronic circuits based on organic electrochemical transistor (OECT)-based electronic circuits comprising the 3–8 decoder for active pad selection and high current throughput transistors for switching were produced by multi-layer screen printing. Devices with different architectures of switching transistors were tested in relevant conditions for electrical stimulation applications. An automated testbed with a configurable stimulation source and an adjustable human model equivalent circuit was developed for this purpose. Three of the proposed architectures successfully routed electrical currents of up to 15 mA at an output voltage of 30 V, while one was reliably performing even at 40 V. The presented results demonstrate feasibility of the concept in a range of conditions relevant to several applications of electrical stimulation. © 2022 by the authors
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