| 1. |
- Chen, Ding Yuan, et al.
(författare)
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Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors
- 2020
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 41:6, s. 828-831
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Tidskriftsartikel (refereegranskat)abstract
- High performance microwave GaN-on-SiC HEMTs are demonstrated on a heterostructure without a conventional thick doped buffer. The HEMT is fabricated on a high-quality 0.25~\boldsymbol {\mu }\text{m} unintentional doped GaN layer grown directly on a transmorphic epitaxially grown AlN nucleation layer. This approach allows the AlN-nucleation layer to act as a back-barrier, limiting short channel effects and removing buffer leakage. The devices with the 'buffer-free' heterostructure show competitive DC and RF characteristics, as benchmarked against the devices made on a commercial Fe-doped epi-wafer. Peak transconductances of 500 mS/mm and a maximum saturated drain current of 1 A/mm are obtained. An extrinsic \text{f}-{\sf T} of 70 GHz and \text{f}-{\sf max} of 130 GHz are achieved for transistors with a gate length of 100 nm. Pulsed-IV measurements reveal a lower current slump and a smaller knee walkout. The dynamic IV performance translates to an output power of 4.1 W/mm, as measured with active load-pull at 3 GHz. These devices suggest that the 'buffer-free' concept may offer an alternative route for high frequency GaN HEMTs with less electron trapping effects.
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| 2. |
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| 3. |
- Malmros, Anna, 1977, et al.
(författare)
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Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer
- 2019
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Ingår i: IEEE Transactions on Electron Devices. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 1557-9646 .- 0018-9383. ; 66:7, s. 2910-2915
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Tidskriftsartikel (refereegranskat)abstract
- © 1963-2012 IEEE. An enhancement of the electron mobility ( \mu ) in InAlN/AlN/GaN heterostructures is demonstrated by the incorporation of a thin GaN interlayer (IL) between the InAlN and AlN. The introduction of a GaN IL increases \mu at room temperature (RT) from 1600 to 1930 cm2/Vs. The effect is further enhanced at cryogenic temperature (5 K), where the GaN IL sample exhibits a \mu of 16000 cm2/Vs, compared to 6900 cm2/Vs without IL. The results indicate the reduction of one or more scattering mechanisms normally present in InAlN/AlN/GaN heterostructures. We propose that the improvement in \mu is either due to the suppression of fluctuations in the quantum well subband energies or to reduced Coulomb scattering, both related to compositional variations in the InAlN. HEMTs fabricated on the GaN IL sample demonstrate larger improvement in dc-and high-frequency performance at 5 K; {f}-{\text {max}} increases by 25 GHz to 153 GHz, compared to an increase of 6 GHz to 133 GHz without IL. The difference in improvement was associated mainly with the drop in the access resistances.
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| 4. |
- Papamichail, A., et al.
(författare)
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Compositionally graded channel HEMTs towards improved linearity for low-noise RF amplifiers
- 2022
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Ingår i: 2022 Compound Semiconductor Week, CSW 2022.
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Konferensbidrag (refereegranskat)abstract
- Although AlGaN/GaN HEMTs with high power and current gain have been demonstrated in RF device applications, at high signal operation they show an inherent non-linear behavior which leads to gain compression and signal distortion. Polarization-doped AlGaN/GaN HEMTs, with a compositionally graded channel enables a linear response improvement through formation of a 3-D electron gas. In this work, we develop the growth process for graded channel HEMTs in a hot-wall MOCVD reactor. Control of the grading profile is established through growth parameter tuning. Afterwards, analysis by EDS allows for precise determination of Al composition across the channel. Conventional and graded channel HEMT structures were fabricated and characterized. Furthermore, the sheet resistance, carrier density and mobility in HEMT structures with different grading profiles are compared and discussed. The conventional (non-graded) structure revealed the highest electron mobility of ~2350 cm2/V.s, which is among the highest values reported.
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| 5. |
- Persson, P. O.Å., et al.
(författare)
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Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers
- 2023
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 122:15
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Tidskriftsartikel (refereegranskat)abstract
- Compositionally graded channel AlGaN/GaN high electron mobility transistors (HEMTs) offer a promising route to improve device linearity, which is necessary for low-noise radio-frequency amplifiers. In this work, we demonstrate different grading profiles of a 10-nm-thick AlxGa1-xN channel from x = 0 to x = 0.1 using hot-wall metal-organic chemical vapor deposition (MOCVD). The growth process is developed by optimizing the channel grading and the channel-to-barrier transition. For this purpose, the Al-profiles and the interface sharpness, as determined from scanning transmission electron microscopy combined with energy-dispersive x-ray spectroscopy, are correlated with specific MOCVD process parameters. The results are linked to the channel properties (electron density, electron mobility, and sheet resistance) obtained by contactless Hall and terahertz optical Hall effect measurements coupled with simulations from solving self-consistently Poisson and Schrödinger equations. The impact of incorporating a thin AlN interlayer between the graded channel and the barrier layer on the HEMT properties is investigated and discussed. The optimized graded channel HEMT structure is found to have similarly high electron density (∼9 × 10 12 cm-2) as the non-graded conventional structure, though the mobility drops from ∼ 2360 cm2/V s in the conventional to ∼ 960 cm2/V s in the graded structure. The transconductance gm of the linearly graded channel HEMTs is shown to be flatter with smaller g m ′ and g m ″ as compared to the conventional non-graded channel HEMT implying improved device linearity.
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