| 1. |
- Ali, M., et al.
(författare)
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Reduced photoluminescence from InGaN/GaN multiple quantum well structures following 40 MeV iodine ion irradiation
- 2009
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Ingår i: Physica. B, Condensed matter. - : Elsevier. - 0921-4526 .- 1873-2135. ; 404:23-24, s. 4925-4928
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Tidskriftsartikel (refereegranskat)abstract
- The effects following ion irradiation of GaN-based devices are still limited. Here we present data on the photoluminescence (PL) emitted from InGaN/GaN multiple quantum well (MQW) structures, which have been exposed to 40 MeV I ion irradiation. The PL is reduced as a function of applied ion fluence, with essentially no PL signal left above 1011 ions/cm2. It is observed that even the ion fluences in the 109 ions/cm2 range have a pronounced effect on the photoluminescence properties of the MQW structures. This may have consequences concerning application of InGaN/GaN MQW’s in radiation-rich environments, in addition to defect build-up during ion beam analysis.
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| 2. |
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| 3. |
- Jaafar, M., et al.
(författare)
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FePt thin film irradiated with high energy ions
- 2007
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Ingår i: Physica status solidi. A, Applied research. - : Wiley. - 0031-8965 .- 1521-396X. ; 204:6, s. 1724-1730
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Tidskriftsartikel (refereegranskat)abstract
- The changes in structural and magnetic properties of FePt thin films due to the irradiation with high energy ions (Br7+ and Cl2+) were studied. From the hysteresis loops dominating in-plane anisotropy is derived, however, the samples present a minor out-of-plane component. The structure and the magnetic properties of the films can be tuned by selecting the appropriate irradiation parameters (different ions, energies and fluencies). For the irradiation parameters used in this study an in-plane anisotropy is favoured. Irradiation with Br7+ seems to induce minor changes in the structural ordering of the thin films, whereas the Cl2+ ions promote the amorphization of the surface of the films. In addition, a magnetic thin film pattemed at the micrometer scale was obtained after irradiation through a micrometric mask.
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| 4. |
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| 5. |
- Gausemel, H., et al.
(författare)
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Decay of 127In and 129In.
- 2004
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Ingår i: Phys. Rev. C. ; 69:054307
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Tidskriftsartikel (refereegranskat)
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| 6. |
- Jensen, Jens, et al.
(författare)
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Swift heavy ion beam-based nanopatterning using self-assembled masks
- 2007
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Ingår i: Ion-Beam-Based Nanofabrication. - Warrendale, Pa : Materials Research Society. - 9781558999800 ; , s. 55-60
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Konferensbidrag (refereegranskat)abstract
- Swift heavy ion beam-based lithography using masks of self-assembled materials has been applied for transferring well-ordered micro- and nanopatterns to rutile TiO2 single crystals. As the induced damage has a high etching selectivity the patterns can be developed in HF with very high contrast. Here we present resulting patterns when using a mask of self-ordered silica spheres. Since the obtained structures are replicas of the mass distribution of the applied mask, the shape and size of resulting structures depend on the geometric configuration of the silica sphere layers. In addition, the resulting pattern can be tuned by varying the applied ion energy and fluence. Direct modifications of the optical properties of TiO2 in a well-defined pattern are also presented.
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| 7. |
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