| 1. |
- Lenz, Annika, et al.
(författare)
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ZnO Nanoparticles Functionalized with Organic Acids: An Experimental and Quantum-Chemical Study
- 2009
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Ingår i: The Journal of Physical Chemistry C. - : American Chemical Society (ACS). - 1932-7447 .- 1932-7455. ; 113:40, s. 17332-17341
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Tidskriftsartikel (refereegranskat)abstract
- Electrochemical synthesis and physical characterization of ZnO nanoparticles functionalized with four different organic acids, three aromatic (benzoic, nicotinic, and trans-cinnamic acid) and one nonaromatic (formic acid), are reported. The functionalized nanoparticles have been characterized by X-ray powder diffraction, transmission electron microscopy, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, UV−vis, and photoluminescence spectroscopy. The adsorption of the organic acids at ZnO nanoparticles was further analyzed and interpreted using quantum-chemical density-functional theory computations. Successful functionalization of the nanoparticles was confirmed experimentally by the measured splitting of the carboxylic group stretching vibrations as well as by the N(1s) and C(1s) peaks from XPS. From a comparison between computed and experimental IR spectra, a bridging mode adsorption geometry was inferred. PL spectra exhibited a remarkably stronger near band edge emission for nanoparticles functionalized with formic acid as compared to the larger aromatic acids. From the quantum-chemical computations, this was interpreted to be due to the absence of aromatic adsorbate or surface states in the band gap of ZnO, caused by the formation of a complete monolayer of HCOOH. In the UV−vis spectra, strong charge-transfer transitions were observed.
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| 2. |
- Adnane, Bouchaib, et al.
(författare)
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Origin of photoresponse at 8-14 μm in stacks of self-assembled SiGe/Si quantum dots
- 2009
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X.
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- A normal incidence photodetector operating at 8-14 μm is demonstrated using p-type δ-doped SiGe dot multilayer structures grown by molecular beam epitaxy on Si(001) substrates. Based on the experimental results of photoluminescence and photoluminescence excitation spectroscopies together with numerical analysis, the origin of the measured photocurrent was attributed to intersubband optical transitions between the heavy hole and light hole states of the valence band of the self-assembled SiGe dots and subsequent lateral transport of photo-excited carriers in the conduction channels formed by Ge wetting layers.
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| 3. |
- Adnane, Bouchaib, et al.
(författare)
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Photoluminescence excitation spectroscopy of self-assembled SiGe/Si quantum dots
- 2009
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Photoluminescence excitation (PLE) experiments are reported for various self-assembled SiGe/Si dot samples grown on Si(001) by molecular beam epitaxy at substrate temperatures ranging from 430 to 580 C. Two excitation peaks were observed, and the characteristics of the involved optical transitions were studied in detail by PLE (in one case implemented together with selective photoluminescence, SPL) on different samples containing either only one SiGe dot layer or multiple SiGe-dot/Si stacks. The temperature- and power-dependence of the excitation properties together with the results of six-band k.p calculations support the assignment of the observed PLE peaks to spatially direct and indirect transitions collected from two different SiGe dot populations.
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| 4. |
- Adnane, Bouchaib, et al.
(författare)
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Spatially direct and indirect transitions of self-assembled SiGe/Si quantum dots studied by photoluminescence excitation spectroscopy
- 2010
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 96:18, s. 181107-
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Tidskriftsartikel (refereegranskat)abstract
- Well-resolved photoluminescence excitation (PLE) spectra are reported for selfassembled SiGe dots grown on Si(100) by molecular beam epitaxy. The observation of two excitation resonance peaks is attributed to two different excitation/de-excitation routes of interband optical transitions connected to the spatially direct and indirect recombination processes. It is concluded that two dot populations are addressed by each monitored luminescence energy for the PLE acquisition.
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| 9. |
- Esmaeili, M., et al.
(författare)
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Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures : Influence of Al composition and Si doping
- 2007
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 18:2
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Tidskriftsartikel (refereegranskat)abstract
- A detailed study of low-temperature photoluminescence (PL) in GaN/AlGaN multiple quantum well (MQW) nanostructures has been reported. We have investigated the effect of Si doping and Al content on PL spectra and PL decay time of these structures. The temperature dependence of radiative as well as non-radiative lifetimes have been evaluated between 2K and room temperature for different Si doping. We found that radiative recombination at higher temperatures even up to RT is stronger in the doped sample, compared to the undoped one. Hole localization in GaN/AlGaN MQWs with different compositions of Al is demonstrated via PL transient decay times and LO phonon coupling. It is found that there is an increasing of the decay time at the PL peak emission with increasing Al composition. For the undoped sample, a non-exponential PL decay behaviour at 2K is attributed to localized exciton recombination. A slight upshift in QWs PL peak with increasing Al composition is observed, which is counteracted by the expected rise of the internal QW electric field with increasing Al. The localization energies have been evaluated by studying the variation of the QW emission versus temperature and we found out that the localization energy increases with increasing Al composition. © IOP Publishing Ltd.
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