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Sökning: WFRF:(Holub Krappe E.)

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1.
  • Removic-Langer, K, et al. (författare)
  • Spin and orbital moments in Au/Co/Au(111)/W(110) across the spin-reorientation transition-temperature
  • 2003
  • Ingår i: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. - 0168-583X. ; 200, s. 210-214
  • Tidskriftsartikel (refereegranskat)abstract
    • The temperature-driven spin-reorientation transition (SRT) has been investigated in a layer of 2.1 nm Co in Au/Co/Au. We studied the evolution and stability of the in-plane magnetization components in the temperature range from 300 to 90 K by means of polarized neutron reflectometry (PNR) and Co L-edge X-ray magnetic circular dichroism (XMCD) measurements. The PNR measurement provides evidence for the occurrence of a SRT in this temperature range. XMCD can be used as a vector magnetometer that yields both the in- and out-of-plane magnetization components per Co atom. Combining the results of both techniques (PNR and XMCD) allows separating the orbital and spin magnetic moments using magneto-optical sum rules. We observed that already above the SRT the in-plane orbital moment component changes significantly stronger than the spin component. (C) 2002 Elsevier Science B.V. All rights reserved.
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2.
  • Wolska, A., et al. (författare)
  • XANES studies of Mn K and L-3,L-2 edges in the (Ga,Mn) As layers modified by high temperature annealing
  • 2008
  • Ingår i: Acta Physica Polonica. A. - 0587-4246 .- 1898-794X. ; 114:2, s. 357-366
  • Tidskriftsartikel (refereegranskat)abstract
    • Ga1-xMnx As is commonly considered as a promising material for microelectronic applications utilizing the electron spin. One of the ways that allow increasing the Curie temperature above room temperature is to produce second phase inclusions. In this paper Gal-,Mn.As samples containing precipitations of ferromagnetic MnAs are under consideration. We focus on the atomic and electronic structure around the Mn atoms relating to the cluster formation. The changes in the electronic structure of the Mn, Ga and As atoms in the (Ga,Mn)As layers after high temperature annealing were determined by X-ray absorption near edge spectroscopy. The experimental spectra were compared with the predictions of ab initio full multiple scattering theory using the FEFF 8.4 code. The nominal concentration of the Mn atoms in the investigated samples was 6% and 8%. We do not observe changes in the electronic structure of Ca and As introduced by the presence of the Mn atoms. We find, in contrast, considerable changes in the electronic structure around the Mn atoms. Moreover, for the first time it was possible to indicate the preferred interstitial positions of the Mn atoms.
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