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- Luo, G, et al.
(författare)
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Suppressing phosphorus diffusion in germanium by carbon incorporation
- 2005
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Ingår i: Electronics Letters. - : Iet. - 0013-5194 .- 1350-911X. ; 41:24, s. 1354-1355
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Tidskriftsartikel (refereegranskat)abstract
- A problem in the Ge MOSFET process is that the phosphor-us for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.
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