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Sökning: WFRF:(Hu Changzheng)

  • Resultat 1-6 av 6
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1.
  • Dong, Beibei, et al. (författare)
  • Selecting the approach for dynamic modelling of CO2 capture in biomass/waste fired CHP plants
  • 2023
  • Ingår i: International Journal of Greenhouse Gas Control. - : Elsevier Ltd. - 1750-5836 .- 1878-0148. ; 130
  • Tidskriftsartikel (refereegranskat)abstract
    • Integrating CO2 capture with biomass/waste fired combined heat and power (CHP) plants is a promising method to achieve negative emissions. However, the use of versatile biomass/waste and the dynamic operation of CHP plants result in bigger fluctuations in the properties of flue gas (FG), e.g. CO2 concentration (CO2vol%) and flowrates, and the heat that can be used for CO2 capture, when comparing with coal fired power plants. To address such a challenge, dynamic modelling is essential to accurately estimate the amount of captured CO2 and optimize the operation of CO2 capture. This paper compares three dynamic approaches commonly used in literature, namely using the ideal static model (IST) and using dynamic models without control (Dw/oC) and with control (DwC), for MEA based chemical absorption CO2 capture. The performance of approaches is assessed under the variations of key factors, including the flowrate and CO2vol% of FG, and the available heat for CO2 capture. Simulation results show clear differences. For example, when the CO2vol% drops from 15.7 % to 9.7 % (about 38 %) within 4 hours, DwC gives the highest amount of captured CO2, which is 7.3 % and 22.3 % higher than IST and Dw/oC, respectively. It is also found that the time step size has a clear impact on the CO2 capture amount, especially for DwC. Based on the results, suggestions are also provided regarding the selection of dynamic modelling approaches for different purposes of simulations.
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2.
  • Feng, Feng, et al. (författare)
  • Room-temperature large magnetic-dielectric coupling in new phase anatase VTiO4
  • 2013
  • Ingår i: Chemical Communications. - : Royal Society of Chemistry (RSC). - 1359-7345 .- 1364-548X. ; 49:89, s. 10462-10464
  • Tidskriftsartikel (refereegranskat)abstract
    • The synthetic new-phase VTiO4, as a new solid solution structure of anatase type, brings a large magnetodielectric ratio (Delta epsilon/epsilon(0)) of 7.2% at 300 K, representing a new simple-oxide structural catalogue exhibiting a room-temperature large magnetic-dielectric effect.
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3.
  • Feng, Jun, et al. (författare)
  • Giant Moisture Responsiveness of VS2 Ultrathin Nanosheets for Novel Touchless Positioning Interface
  • 2012
  • Ingår i: Advanced Materials. - : Wiley. - 0935-9648 .- 1521-4095. ; 24:15, s. 1969-1974
  • Tidskriftsartikel (refereegranskat)abstract
    • Utilizing a thin film of VS2 ultrathin nanosheets with giant and fast moisture responsiveness, a brand-new model of moisture-based positioning interface is put forward here, by which not only the 2D position information of finger tips can be acquired, but also the relative height can be detected as the third dimensionality, representing a promising platform for advanced man-machine interactive systems.
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4.
  • Lin, Chenwen, et al. (författare)
  • Hydrogen-Incorporated TiS2 Ultrathin Nanosheets with Ultrahigh Conductivity for Stamp-Transferrable Electrodes
  • 2013
  • Ingår i: Journal of the American Chemical Society. - : American Chemical Society (ACS). - 0002-7863 .- 1520-5126. ; 135:13, s. 5144-5151
  • Tidskriftsartikel (refereegranskat)abstract
    • As a conceptually new class of two-dimensional (2D) materials, the ultrathin nanosheets as inorganic graphene analogues (IGAs) play an increasingly vital role in the new-generation electronics. However, the relatively low electrical conductivity of inorganic ultrathin nanosheets in current stage significantly hampered their conducting electrode applications in constructing nanodevices. We developed the unprecedentedly high electrical conductivity in inorganic ultrathin nanosheets. The hydric titanium disulfide (HTS) ultrathin nanosheets, as a new IGAs, exhibit the exclusively high electrical conductivity of 6.76 x 10(4) S/m at room temperature, which is superior to indium tin oxide (1.9 x 10(4) S/m), recording the best value in the solution assembled 2D thin films of both graphene (5.5 x 10(4) S/m) and inorganic graphene analogues (5.0 x 10(2) S/m). The modified hydrogen on S-Ti-S layers contributes additional electrons to the TiS2 layered frameworks, rendering the controllable electrical conductivity as well as the electron concentrations. Together with synergic advantages of the excellent mechanical flexibility, high stability, and stamp-transferrable properties, the HTS thin films show promising capability for being the next generation conducting electrode material in the nanodevice fields.
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5.
  • Sun, Yongfu, et al. (författare)
  • Fabrication of flexible and freestanding zinc chalcogenide single layers
  • 2012
  • Ingår i: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723. ; 3, s. 1057-
  • Tidskriftsartikel (refereegranskat)abstract
    • Inorganic graphene analogues (IGAs) are a conceptually new class of materials with attractive applications in next-generation flexible and transparent nanodevices. However, their species are only limited to layered compounds, and the difficulty in extension to non-layered compounds hampers their widespread applicability. Here we report the fabrication of large-area freestanding single layers of non-layered ZnSe with four-atomic thickness, using a strategy involving a lamellar hybrid intermediate. Their surface distortion, revealed by means of synchrotron radiation X-ray absorption fine structure spectroscopy, is shown to give rise to a unique electronic structure and an excellent structural stability, thus determining an enhanced solar water splitting efficiency and photostability. The ZnSe single layers exhibit a photocurrent density of 2.14 mA cm(-2) at 0.72 V versus Ag/AgCl under 300 W Xe lamp irradiation, 195 times higher than that of bulk counterpart. This work opens the door for extending atomically thick IGAs to non-layered compounds and holds promise for a wealth of innovative applications.
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6.
  • Xu, Kun, et al. (författare)
  • Highly entangled K0.5V2O5 superlong nanobelt membranes for flexible nonvolatile memory devices
  • 2012
  • Ingår i: Journal of Materials Chemistry. - : Royal Society of Chemistry (RSC). - 0959-9428 .- 1364-5501. ; 22:35, s. 18214-18220
  • Tidskriftsartikel (refereegranskat)abstract
    • Flexible electronics has been an intensively pursued hot topic in recent years, and flexible nonvolatile memory devices (NVMs) are also an important concept in modern electronics due to the advantages of retaining stored information even when not powered, with great portability and high deformability. In this study, we report that delta-K0.5V2O5 bronze with sandwiched potassium atoms in the V-O framework has been found to be a new promising material platform for intriguing nonvolatile memory applications. The bronze structure with the sandwiched alkali metal atoms between the two V2O5 layers ensures the promising NVM effect by changing the electronic properties under an applied electric field. The delta-K0.5V2O5 bronze entangled superlong nanobelt networks, which are established via the "solid-solution-solid" (SSS) mechanism and a hydrogen-bond-assisted entangling process, bring the synergic advantages of excellent mechanical and electrical properties. Spin polarized GGA+U density functional theory calculations elucidate well the nature of bronze-based NVM, in which the overall effect of applying an electric field is to reduce the energy gap, no matter what the direction of the electric field is; the effects of electric field and ion shift would follow the same trend, the non-linear band gap changes would lead to resistance changes of this material. The NVMs based on the entangled superlong nanobelt membrane possess the advantages of not only low cost and very simple device structure, but also a reversible and noticeable nonlinear hysteresis, low consumption, stable WRER cycles, and a long retention time over 1000 s, showing promise for next-generation flexible NVMs.
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