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| 2. |
- Hubers, Anna A M, et al.
(författare)
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Suicidal ideation in a European Huntington's disease population
- 2013
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Ingår i: Journal of Affective Disorders. - : Elsevier BV. - 1573-2517 .- 0165-0327. ; 151:1, s. 58-248
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Tidskriftsartikel (refereegranskat)abstract
- BACKGROUND: Previous studies indicate increased prevalences of suicidal ideation, suicide attempts, and completed suicide in Huntington's disease (HD) compared with the general population. This study investigates correlates and predictors of suicidal ideation in HD.METHODS: The study cohort consisted of 2106 HD mutation carriers, all participating in the REGISTRY study of the European Huntington's Disease Network. Of the 1937 participants without suicidal ideation at baseline, 945 had one or more follow-up measurements. Participants were assessed for suicidal ideation by the behavioural subscale of the Unified Huntington's Disease Rating Scale (UHDRS). Correlates of suicidal ideation were analyzed using logistic regression analysis and predictors were analyzed using Cox regression analysis.RESULTS: At baseline, 169 (8.0%) mutation carriers endorsed suicidal ideation. Disease duration (odds ratio [OR]=0.96; 95% confidence interval [CI]: 0.9-1.0), anxiety (OR=2.14; 95%CI: 1.4-3.3), aggression (OR=2.41; 95%CI: 1.5-3.8), a previous suicide attempt (OR=3.95; 95%CI: 2.4-6.6), and a depressed mood (OR=13.71; 95%CI: 6.7-28.0) were independently correlated to suicidal ideation at baseline. The 4-year cumulative incidence of suicidal ideation was 9.9%. Longitudinally, the presence of a depressed mood (hazard ratio [HR]=2.05; 95%CI: 1.1-4.0) and use of benzodiazepines (HR=2.44; 95%CI: 1.2-5.0) at baseline were independent predictors of incident suicidal ideation, whereas a previous suicide attempt was not predictive.LIMITATIONS: As suicidal ideation was assessed by only one item, and participants were a selection of all HD mutation carriers, the prevalence of suicidal ideation was likely underestimated.CONCLUSIONS: Suicidal ideation in HD frequently occurs. Assessment of suicidal ideation is a priority in mutation carriers with a depressed mood and in those using benzodiazepines.
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| 3. |
- Pavlov, S. G., et al.
(författare)
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Terahertz emission from phosphor centers in SiGe and SiGe/Si semiconductors
- 2008
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Konferensbidrag (refereegranskat)abstract
- Terahertz-range photoluminescence from silicon-germanium crystals and superlattices doped by phosphor has been studied under optical excitation by radiation from a mid-infrared CO2 laser at low temperature. SiGe crystals with a Ge content between 0.9 and 6.5%, doped by phosphor with a concentration optimal for silicon laser operation, do not exhibit terahertz gain. On the contrary, terahertz-range gain of ∼ 2.3-3.2 cm-1 has been observed for donor-related optical transitions in Si/SiGe strained superlattices at pump intensities above 100 kW/cm2.
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| 4. |
- Stockhausen, A., et al.
(författare)
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Adjustment of self-heating in long superconducting thin film NbN microbridges
- 2012
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Ingår i: Superconductor Science and Technology. - : IOP Publishing. - 0953-2048 .- 1361-6668. ; 25:3
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Tidskriftsartikel (refereegranskat)abstract
- The self-heating in long superconducting microbridges made from thin NbN films deposited on top of high silicon mesa structures was studied by analyzing the hysteresis current density j(H). We observed a more than twofold decrease of j(H) with increase in the ratio of the height of the Si mesa, h, to the width of the microbridge, W, from 0 to 24. We describe our experimental results using one-dimensional thermal balance equations taking into account disordered matter in our thin NbN films and limitations imposed on the phonon mean free path by the width of the Si mesa. In the framework of this model we obtain a good agreement between theory and experiment over a wide temperature range from 4.2 K up to the critical temperature T-C for all h/W ratios.
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| 7. |
- Månberg, Anna, 1985-, et al.
(författare)
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Altered perivascular fibroblast activity precedes ALS disease onset
- 2021
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Ingår i: Nature Medicine. - : Nature Publishing Group. - 1078-8956 .- 1546-170X. ; 27:4, s. 640-646
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Tidskriftsartikel (refereegranskat)abstract
- Apart from well-defined factors in neuronal cells1, only a few reports consider that the variability of sporadic amyotrophic lateral sclerosis (ALS) progression can depend on less-defined contributions from glia2,3 and blood vessels4. In this study we use an expression-weighted cell-type enrichment method to infer cell activity in spinal cord samples from patients with sporadic ALS and mouse models of this disease. Here we report that patients with sporadic ALS present cell activity patterns consistent with two mouse models in which enrichments of vascular cell genes preceded microglial response. Notably, during the presymptomatic stage, perivascular fibroblast cells showed the strongest gene enrichments, and their marker proteins SPP1 and COL6A1 accumulated in enlarged perivascular spaces in patients with sporadic ALS. Moreover, in plasma of 574 patients with ALS from four independent cohorts, increased levels of SPP1 at disease diagnosis repeatedly predicted shorter survival with stronger effect than the established risk factors of bulbar onset or neurofilament levels in cerebrospinal fluid. We propose that the activity of the recently discovered perivascular fibroblast can predict survival of patients with ALS and provide a new conceptual framework to re-evaluate definitions of ALS etiology.
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| 8. |
- Shastin, V. N., et al.
(författare)
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THZ amplification based on impurity-band transitions In Si/GeSi heterostructures
- 2008
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Ingår i: Proceedings of CAOL 2008. - 9781424419746 ; , s. 422-424
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Konferensbidrag (refereegranskat)abstract
- Terahertz stimulated emission based on impurity-band optical transitions of phosphor donor centers embedded in Si/GeSi heterostructures is reported. THz emission was measured from selectively doped Si/GeSi structures excited by CO2 laser radiation. Amplification of 8-9 THz emission with the coefficient of 2-3 cm-1 is obtained for structures with gently strained selectively doped Si layers (Nd ≈ 1017 cm -3) under pump density of 200 kW/cm2. Corresponding net gain taking into account small overlapping of active layer with THz mode is estimated to be ∼ 200-300 cm-1. Experimental data demonstrate the possibility to use impurity-band transitions for THz laser action. The capability of Si/GeSi quantum cascade scheme which can support inverted population on donor-continuum transitions of Si conduction band is also analyzed.
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