| 1. |
- Goyenola, Cecilia, 1983-
(författare)
-
Nanostructured carbon-based thin films : prediction and design
- 2015
-
Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Carbon-based thin films are a vast group of materials of great technological importance. Thanks to the different bonding options for carbon, a large variety of structures (from amorphous to nanostructured) can be achieved in the process of film synthesis. The structural diversity increases even more if carbon is combined with relatively small quantities of atoms of other elements. This results in a set of materials with many different interesting properties for a wide range of technological applications.This doctoral thesis is about nanostructured carbon-based thin films. In particular, the focus is set on theoretical modeling, prediction of structural features and design of sulfo carbide (CSx) and carbon fluoride (CFx) thin films.The theoretical approach follows the synthetic growth concept (SGC) which is based on the density functional theory. The SGC departure point is the fact that the nanostructured films of interest can be modeled as assemblies of low dimensional units (e.g., finite graphene-like model systems), similarly to modeling graphite as stacks of graphene sheets. Moreover, the SGC includes a description of the groups of atoms that act as building blocks (i.e., precursors) during film deposition, as well as their interaction with the growing film.This thesis consists of two main parts:Prediction: In this work, I show that nanostructured CSx thin films can be expected for sulfur contents up to 20 atomic % with structural characteristics that go from graphite-like to fullerene-like (FL). In the case of CFx thin films, a diversity of structures are predicted depending on the fluorine concentration. Short range ordered structures, such as FL structure, can be expected for low concentrations (up to 5 atomic %). For increasing fluorine concentration, diamond-like and polymeric structures should predominate. As a special case, I also studied the ternary system CSxFy. The calculations show that CSxFy thin films with nanostructured features should be possible to synthesize at low sulfur and fluorine concentrations and the structural characteristics can be described and explained in terms of the binaries CSx and CFx.Design: The carbon-based thin films predicted in this thesis were synthesized by magnetron sputtering. The results from my calculations regarding structure and composition, and analysis of precursors (availability and role during deposition process) were successfully combined with the experimental techniques in the quest of obtaining films with desired structural features and understanding their properties.
|
|
| 2. |
- Halim, Joseph, 1985-
(författare)
-
Synthesis and Characterization of 2D Nanocrystals and Thin Films of Transition Metal Carbides (MXenes)
- 2014
-
Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Two dimensional (2D) materials have received growing interest because of their unique properties compared to their bulk counterparts. Graphene is the archetype 2D solid, but other materials beyond graphene, such as MoS2 and BN have become potential candidates for several applications. Recently, a new family of 2D materials of early transition metal carbides and carbonitrides (Ti2CTx, Ti3C2Tx, Ti3CNTx, Ta4C3Tx, and more), labelled MXenes, has been discovered, where T stands for the surface-terminating groups.Before the present work, MXenes had only been synthesized in the form of exfoliated and delaminated powders, which is not suitable for electronic applications. In this thesis, I demonstrate the synthesis of MXenes as epitaxial thin films, a more suitable form for electronic and photonic applications. Results show that 2D epitaxial Ti3C2Tx films - produced by HF and NH4HF2 etching of magnetron sputter-grown Ti3AlC2 - exhibit metallic conductive behaviour down to 100 K and are 90% transparent to light in the visible-infrared range. The results from this work may open the door for MXenes as potential candidates for transparent conductive electrodes as well as in electronic, photonic and sensing applications.MXenes have been shown to intercalate cations and molecules between their layers that in turn can alter the surface termination groups. There is therefore a need to study the surface chemistries of synthetized MXenes to be able to study the effect of intercalation as well as altering the surface termination groups on the electronic structure and chemical states of the elements present in MXene layers. X-ray Photoelectron Spectroscopy (XPS) in-depth characterization was used to investigate surface chemistries of Ti3C2Tx and Ti2CTx. This thesis includes the discussion of the effect of Ar+ sputtering and the number of layers on the surface chemistry of MXenes. This study serves as a baseline for chemical modification and tailoring of the surface chemistry groups to potential uses and applications.New MXene phases, Nb2CTx and V2CTx, are shown in this thesis to be produced from HF chemical etching of Nb2AlC and V2AlC powders. Characterization of the produced MXenes was carried out using Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD), Transmission Electron Microscope (TEM) and XPS. Nb2CTx and V2CTx showed promising performance as electrodes for Li-ion batteries.In this thesis, electrochemical etching was used in an attempt to produce 2D metal carbides (MXene) from their ternary metal carbides, Ti3SiC2, Ti3AlC2 and Ti2AlC MAX phases. MAX phases in the form of highly dense bulk produced by Hot Isostatic Press. Several etching solutions were used such as HF, NaCl and HCl. Unlike the HF chemical etching of MAX phases, which results in MXenes, the electrochemical etching resulted in Carbide Derived Carbon (CDC). Here, I show the characterization of the produced CDC using several techniques such as XRD, TEM, Raman spectroscopy, and XPS. Electrochemical characterization was performed in the form of cyclic voltammetry, which sheds light on the etching mechanism.
|
|
| 3. |
- Johnson, Lars, 1983-
(författare)
-
Inside The Miscibility Gap : Nanostructuring and Phase Transformations in Hard Nitride Coatings
- 2012
-
Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- This thesis is concerned with self-organization phenomena in hard and wear resistant transition-metal nitride coatings, both during growth and during post deposition thermal annealing. The uniting physical principle in the studied systems is the immiscibility of their constituent parts, which leads, under certain conditions, to structural variations on the nanoscale. The study of such structures is challenging, and during this work atom probe tomography (apt) was developed as a viable tool for their study. Ti0.33Al0.67N was observed to undergo spinodal decomposition upon annealing to 900 °C, by the use of apt in combination with electron microscopy. The addition of C to TiSiN was found to promote and refine the feather-like microstructure common in the system, with an ensuing decrease in thermal stability. An age-hardening of 36 % was measured in arc evaporated Zr0.44Al0.56N1.20, which was a nanocomposite of cubic, hexagonal, and amorphous phases. Magnetron sputtering of Zr0.64Al0.36N at 900 °C resulted in a self-organized and highly ordered growth of a two-dimensional two-phase labyrinthine structure of cubic ZrN and wurtzite AlN.The structure was analyzed and recovered by apt, although the ZrN phase suffered from severe trajectory aberrations, rendering only the Al signal useable.The initiation of the organized growth was found to occur by local nucleation at 5-8 nm from the substrate, before which random fluctuations in Al/Zr content increased steadily from the substrate. Finally, the decomposition of solid-solution TiB0.33N0.67 was found, by apt, to progress through the nucleation of TiB0.5N0.5 and TiN, followed by the transformation of the former into hexagonal TiB2.
|
|
| 4. |
- Li, Xiao, 1995-
(författare)
-
Toward Energy-efficient Physical Vapor Deposition : Routes for Replacing Substrate Heating during Magnetron Sputtering by Employing Metal Ion Irradiation
- 2023
-
Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- In this Thesis, magnetron sputtering is perfected as an environmental-friendly deposition technique. I performed systematic studies of a novel approach - hybrid high-power impulse and dc magnetron co-sputtering (HiPIMS/DCMS) with metal-ion-synchronized substrate bias pulses. The technique relies on the use of high-mass metal ion irradiation from the HiPIMS source to densify material deposited by the primary metal targets that operate in the DCMS mode. Thermally-driven adatom mobility, conventionally used to obtain high-quality layers, is replaced by low-energy recoils that are effectively created upon heavy metal ion bombardment of the growing film surface. As a result, the need for external heating is effectively eliminated and the useful growth temperature can be as low as 130 °C. Ti-Al-N is chosen as a model materials system for the studies in this thesis due to its relevance for industrial applications and well-known challenges for phase stability control. The role of the metal ion mass on densification, phase content, nanostructure, and mechanical properties of metastable cubic Ti0.50Al0.50N-based thin films is investigated. Three series of (Ti1-yAly)1-xMexN (Me = Cr, Mo, W) films are grown with x varied intentionally by adjusting the DCMS power. There is a strong dependence of film properties on the mass of the HiPIMS-generated metal ions. All layers deposited with Cr+ irradiation exhibit porous nanostructure, high oxygen content, and poor mechanical properties. In contrast, (Ti1-yAly)1-xWxN films are fully-dense even with the lowest W concentration, x = 0.09. A strong coupling is found between W+ incident energy Ew+ and minimum W concentration x required to grow dense (Ti1-yAly)1-xWxN layers. With lower x, higher Ew+ is needed to obtain dense films. (Ti1-yAly)1-xWxN film growth is also studied as a function of the relative Al content on the metal lattice, y = Al / (Al + Ti), covering the entire range up to the achievable solubility limit of y ~ 0.67. High-Al content films that are desired in industrial applications (as the high temperature oxidation resistance increases with increasing y) are demonstrated, while precipitation of the softer hexagonal AlN phase is avoided. It is shown that the W+ irradiation from HiPIMS source can be used to grow high-Al content layers with high hardness and low residual stress, while avoiding wurtzite AlN precipitation. The critical parameter that controls the growth is shown to be the average momentum transfer per deposited metal adatom. W+ ion irradiation is shown to have a determining role in the densification of TiAlWN films grown by hybrid W-HiPIMS/TiAl-DCMS co-sputtering. Films with the same composition were grown as a function of the number of W+ ions per deposited metal atom, η = W+/ (W + Al + Ti). The latter was varied in a wide range by altering the peak target current density on the W target, as confirmed by time-resolved ion mass spectrometry analyses performed at the substrate plane. I demonstrate that the degree of porosity and the nanoindentation hardness are strong functions of η. Finally, high-temperature properties of TiAlWN films grown by hybrid W-HiPIMS/TiAl-DCMS co-sputtering with no external substrate heating is explored, as motivated by application requirements, where the temperature of cutting inserts during machining exceeds 900 °C. A new age hardening mechanism was discovered with Guinier-Preston (GP) zone formation in a ceramic material. Layers with low Al content maintain high hardness well above the annealing temperature characteristic of spinodal decomposition. The evidence from electron microscopy, ab initio calculations, and molecular dynamics simulations, shows that the GP effect originates from the formation of atomic-plane-thick W discs populating {111} planes of the cubic matrix. The results demonstrate for the model materials system of TiAlN that the process energy consumption can be reduced by as much as 64% with respect to conventional methods, with no compromise on coating quality.
|
|
| 5. |
- Buchholt, Kristina, 1978-
(författare)
-
Nanostructured materials for gas sensing applications
- 2011
-
Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- In this Thesis I have investigated the use of nanostructured films as sensing and contact layers for field effect gas sensors in order to achieve high sensitivity, selectivity, and long term stability of the devices in corrosive environments at elevated temperatures. Electrochemically synthesized Pd and Au nanoparticles deposited as sensing layers on capacitive field effect devices were found to give a significant response to NOx with small, or no responses to H2, NH3, and C3H6. Pt nanoparticles incorporated in a TiC matrix are catalytically active, but the agglomeration and migration of the Pt particles towards the substrate surface reduces the activity of the sensing layer. Magnetron sputtered epitaxial films from the Ti-Si-C and the Ti-Ge-C systems were grown on 4H-SiC substrates in order to explore their potential as high temperature stable ohmic contact materials to SiC based field effect gas sensors. Ti3SiC2 thin films deposited on 4H-SiC substrates were found to yield ohmic contacts to n-type SiC after a high temperature rapid thermal anneal at 950 ºC. Investigations on the growth mode of Ti3SiC2 thin films with varying Si content on 4H-SiC substrates showed the growth to be lateral step-flow with the propagation of steps with a height as small as half a unit cell. The amount of Si present during deposition leads to differences in surface faceting of the films and Si-supersaturation conditions gives growth of Ti3SiC2 films with the presence of TiSi2 crystallites. Current-voltage measurements of the as-deposited Ti3GeC2 films indicate that this material is also a promising candidate for achieving long term stable contact layers to 4H-SiC for operation at elevated temperatures in corrosive environments. Further investigations into the Ti-Ge-C system showed that the previously unreported solid solutions of (Ti,V)2GeC, (Ti,V)3GeC2 and (Ti,V)4GeC3 can be synthesized, and it was found that the growth of these films is affected by the nature of the substrate.
|
|
| 6. |
- Ektarawong, Annop
(författare)
-
First-principles study of configurational disorder in icosahedral boron-rich solids
- 2015
-
Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
- This thesis is a theoretical study of configurationally disordered icosahedral boronrich solids, in particular boron carbides, using density functional theory and alloy theory. The goal is to resolve discrepancies, regarding the properties of boron carbides, between experiments and previous theoretical calculations which have been a controversial issue in the field of icosahedral boron-rich solids. For instance, B13C2 is observed experimentally to be a semiconductor, meanwhile electronic band structure calculations reveal a metallic character of B13C2 due to its electron deficiency. In B4C, on the other hand, the experimentally observed band gap is unexpectedly smaller, not the usual larger, than that of standard DFT calculations. Another example is given by the existence of a small structural distortion in B4C, as predicted in theoretical calculations, which reduces the crystal symmetry from the experimentally observed rhombohedral (R3m) to the based-centered monoclinic (Cm). Since boron carbide is stable as a single-phase over a broad composition range (~8-20 at.% C), substitution of boron and carbon atoms for one another is conceivable. For this reason, the discrepancies have been speculated in the literature, without a proof, to originate from configurational disorder induced by substitutional defects. However, owing to its complex atomic structure, represented by 12-atom icosahedra and 3-atom intericosahedral chains, a practical alloy theory method for direct calculations of the properties of the relevant configurations of disordered boron carbides, as well as for a thermodynamic assessment of their stability has been missing.In this thesis, a new approach, the superatom-special quasirandom structure (SA-SQS), has been developed. The approach allows one to model configurational disorder in boron carbide, induced by high concentrations of low-energy B/C substitutional defects. B13C2 and B4C are the two stoichiometries, mainly considered in this study, as they are of particular importance and have been in focus in the literature. The results demonstrate that, from thermodynamic considerations, both B13C2 and B4C configurationally disorder at high temperature. In the case of B13C2, the configurational disorder splits off some valence states into the band gap that in turn compensates the electron deficiency in ordered B13C2, thus resulting in a semiconducting character. As for B4C, the configurational disorder eliminates the monoclinic distortion, thus resulting in the restoration of the higher rhombohedral symmetry. Configurational disorder can also account for an excel lent agreement on elastic moduli of boron carbide between theory and experiment. Thus, several of the previous discrepancies between theory and experiments are resolved.Inspired by attempts to enhance the mechanical properties of boron suboxide by fabricating boron suboxide-boron carbide composites, as recently suggested in the literature, the SA-SQS approach is used for modeling mixtures of boron suboxide (B6O) and boron carbide (B13C2), denoted by pseudo-binary (B6O)1–x(B13C2)x alloys. The knowledge of configurational disorder, gained from the previous studies of boron carbide, is applied to model the mixing alloys. By investigating the thermodynamics of mixing between B6O and B13C2, the phase diagram of the (B6O)1–x(B13C2)x alloys is outlined and it reveals the existence of a miscibility gap at all temperatures up to the melting point, indicating the coexistence of B6O-rich and either ordered or disordered B13C2-rich domains in (B6O)1–x(B13C2)x alloys under equilibrium condition. However, a limited intermixing of B6O and B13C2 to form solid solutions at high temperature is predicted, e.g. a solid solution of ~5% B13C2 in B6O and ~20% B6O in B13C2 at 2000 K.
|
|
| 7. |
- Engberg, David
(författare)
-
Atom Probe Tomography of TiSiN Thin Films
- 2015
-
Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
- This thesis concerns the wear resistant coating TiSiN and the development of the analysis technique atom probe tomography (APT) applied to this materials system. The technique delivers compositional information through time-of-flight mass spectrometry, with sub-nanometer precision in 3D for a small volume of the sample. It is thus a powerful technique for imaging the local distribution of elements in micro and nanostructures. To gain the full benefits of the technique for the materials system in question, I have developed a method that combines APT with isotopic substitution, here demonstrated by substitution of natN with 15N. This alters the time-of-flight of ions with of one or more N and will thereby enable the differentiation of the otherwise inseparable isotopes 14N and 28Si. Signs of small-scale fluctuations in the data led the development of an algorithm needed to properly visualize these fluctuations. A method to identify the best sampling parameter for visualization of small-scale compositional fluctuations was added to an algorithm originally designed to find the best sampling parameters for measuring and visualizing strong compositional variations. With the identified sampling parameters, the nano-scale compositional fluctuations of Si in the metal/metalloid sub-lattice could be visualized. The existence and size of these fluctuations were corroborated by radial distribution functions, a technique independent of the previously determined sampling parameter. The radial distribution function algorithm was also developed further to ease in the interpretation. The number of curves could thereby be reduced by showing elements, rather than single and molecular ions (of which there were several different kinds). The improvement of the algorithm also allowed interpretation of signs regarding the stoichiometry of SiNy. With a combination of analytical transmission electron microscopy and APT we show Si segregation on the nanometer scale in arc-deposited Ti0.92Si0.0815N and Ti0.81Si0.1915N thin films. APT composition maps and proximity histograms generated from Ti-rich domains show that the TiN contain at least ~2 at. % Si for Ti0.92Si0.08N and ~5 at. % Si for Ti0.81Si0.19N, thus confirming the formation of solid solutions. The formation of relatively pure SiNy domains in the Ti0.81Si0.19N films is tied to pockets between microstructured, columnar features in the film. Finer SiNy enrichments seen in APT possibly correspond to tissue layers around TiN crystallites, thus effectively hindering growth of TiN crystallites, causing TiN renucleation and thus explaining the featherlike nanostructure within the columns of these films.
|
|
| 8. |
- Fashandi, Hossein, 1984-
(författare)
-
Novel Layered and 2D Materials for Functionality Enhancement of Contacts and Gas Sensors
- 2016
-
Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Chemical gas sensors are widely-used electronic devices for detecting or measuring the density levels of desired gas species. In this study, materials with established or potential applications for gas sensors are treated. For the case of high-temperature applications (≈ 600 °C), semiconductor-based gas sensors suffer from rapid oxidation of the metallic ohmic contacts, the same cause-of-failure as for the general case of high-temperature semiconductor electronics. 4H-SiC is an ideal semiconductor for high-temperature applications. Ti3SiC2 is a known ohmic contact to 4H-SiC with the known two-step synthesis process of post-annealing of pre-deposited Ti/Al multilayers or sputter-deposition of Ti3SiC2 films at > 900 °C. Here, sputter-deposition of Ti on 4H-SiC at > 900 °C is presented as a novel single-step method for the synthesis of Ti3SiC2 ohmic contacts, based on a concurrent reaction between sputter-deposited Ti and 4HSiC. Ti3SiC2, similar to any other known ohmic contact, degrade rapidly in high-temperature oxidizing ambient. To try to overcome this obstacle, noble metal diffusion into Ti3SiC2 has been s studied with the goal to retain ohmic properties of Ti3SiC2 and harnessing oxidation resistivity of noble metals. A novel exchange intercalation between Ti3SiC2 and Au is discovered which results in the almost complete exchange of Si with Au giving rise to novel Ti3AuC2 and Ti3Au2C2. Ti3IrC2 is also synthesized through exchange intercalation of Ir into Ti3Au2C2. All the aforementioned phases showed ohmic properties to 4H-SiC. This technique is also studied based on Ti2AlC and Ti3AlC2 resulting in the synthesis of novel Ti2Au2C and Ti3Au2C2, respectively. Using Ti3AuC2 and an Au/IrOx capping layer, an ohmic contact was manufactured, which maintained ohmic properties and showed no structural defects after 1000 h of aging at 600 °C air.Ti3SiC2 is a member of a large family of materials known as Mn+1AXn phases. While exchange reactions of Si (or Al) planes in Ti3SiC2 (Ti2AlC and Ti3AlC2) is presented here, a world-wide research already exists on chemical removal of the same atomic planes from different Mn+1AXn phases and the synthesis of Mn+1Xn sheets known as MXenes. I performed a theoretical study regarding simulation of electronic and structural properties of more than120 different possible MXene phases. The results show that some MXene phases, when terminated by particular gas species, turn into Dirac materials. That is, they possess massless Dirac fermions with different properties compared to graphene such as higher number of Dirac points at the Fermi level, giant spin orbit splitting, and preserved 2D-type electronic properties by extending the dimensionality. The general substantial change of the electronic properties of MXenes under different gas adsorption configurations stands out and can thus be harnessed for sensing applications.Growth of monolayer iron oxide on porous Pt sensing layers is another novel approach used in this study for applying the unique properties of 2D materials for gas sensors. A low temperature shift in CO oxidation characteristics is presented. The approach is similar to that previously reported using bulk single crystal Pt substrate, the latter being an unrealistic model for sensors and catalysts. Monolayer-coated Pt sensing layers were fabricated as the metal component of a metal oxide semiconductor (MOS) capacitor device, whereby the electrical response of the MOS device could be used to map out the catalytic properties of the sensing layer. The monolayer-coated Pt surface showed to be stable with retained improved catalytic properties for > 200 h. The MOS device measurements are here utilized as a handy method for in-situ monitoring of the surface chemical properties of the monolayer-coated Pt and the approach is highly functional for use and characterization of monolayer coatings of widely used sensingor catalytic layers.
|
|
| 9. |
- Frodelius, Jenny, 1978-
(författare)
-
Thick and Thin Ti2AlC Coatings
- 2010
-
Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- This Thesis explores the deposition techniques of magnetron sputtering and high velocity oxy-fuel (HVOF) spraying for Ti2AlC as a promising high-temperature material. Magnetron sputtering aims at producing thin (≤1 μm) Ti2AlC films of high crystal quality for use as a model system in understanding the material’s basic properties. HVOF is a new method for deposition of thick (≥200 μm) coatings by spraying Ti2AlC powder, with the aim of transferring the good bulk properties to coatings. The oxidation behavior of Ti2AlC coatings has been investigated for temperatures up to 1200 °C in air. As-deposited Ti2AlC(0001) thin films decompose into TiC during vacuum annealing at 700 °C by out-diffusion of Al as shown by x-ray diffraction analysis. The release of Al starts already at 500 °C in ambient air as driven by aluminum oxide formation on the film surface where the oxide initially forms clusters as observed by electron microscopy. While sputtering from a Ti2AlC target is simpler than by using different elemental targets, the resulting film composition differs from the target stoichiometry. This is due to differences in energy and angular distribution of the sputtered species and evaporation of Al at substrate temperatures above 700 °C. The composition can be compensated for by adding Ti to bind the Al and obtain phase-pure Ti2AlC coatings. For HVOF, I demonstrate how the total gas flow of a H2/O2 mixture (441-953 liter/min) and the powder grain size (30-56 μm) determine the thickness, density, and microstructure of the coatings. High gas flow and small grain size yield thick coatings of 210 μm with a low porosity of 2-8 % and a tensile stress of ≥80 MPa. A fraction of the Ti2AlC powder decomposes during spraying into TiC, Ti3AlC2, and Ti-Al alloys. The coatings also contain as much as 25 at.% O since the powder partly oxidizes during the spraying process. Increasing the powder size and decreasing the total gas flow yield a higher amount of Ti2AlC, but produces thinner coatings with lower cohesion. Post-annealing of the coatings at 900 °C in vacuum increases the Ti2AlC content due to a reversible phase transformation of the as-sprayed material. The high oxygen content, however, hinders the coating to completely transform into Ti2AlC and deteriorates its oxidation resistance. The work thus offers insights to the key parameters for optimizing Ti2AlC coating processing.
|
|
| 10. |
- Halim, Joseph, 1985-
(författare)
-
Synthesis and transport properties of 2D transition metal carbides (MXenes)
- 2018
-
Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Since the isolation and characterization of graphene, there has been a growing interest in 2D materials owing to their unique properties compared to their 3D counterparts. Recently, a family of 2D materials of early transition metal carbides and nitrides, labelled MXenes, has been discovered (Ti2CTz, Ti3C2Tz, Mo2TiC2Tz, Ti3CNTz, Ta4C3Tz, Ti4N3Tz among many others), where T stands for surface-terminating groups (O, OH, and F). MXenes are mostly produced by selectively etching A layers (where A stands for group A elements, mostly groups 13 and 14) from the MAX phases. The latter are a family of layered ternary carbides and/or nitrides and have a general formula of Mn+1AXn (n = 1-3), where M is a transition metal and X is carbon and/or nitrogen. The produced MXenes have a conductive carbide core and a non-conductive O-, OH- and/or F-terminated surface, which allows them to work as electrodes for energy storage applications, such as Li-ion batteries and supercapacitors.Prior to this work, MXenes were produced in the form of flakes of lateral dimension of about 1 to 2 microns; such dimensions and form are not suitable for electronic characterization and applications. I have synthesized various MXenes (Ti3C2Tz, Ti2CTz and Nb2CTz) as epitaxial thin films, a more suitable form for electronic and photonic applications. These films were produced by HF, NH4HF2 or LiF + HCl etching of magnetron sputtered epitaxial Ti3AlC2, Ti2AlC, and Nb2AlC thin films. For transport properties of the Ti-based MXenes, Ti2CTz and Ti3C2Tz, changing n from 1 to 2 resulted in an increase in conductivity but had no effect on the transport mechanism (i.e. both Ti3C2Tx and Ti2CTx were metallic). In order to examine whether the electronic properties of MXenes differ when going from a few layers to a single flake, similar to graphene, the electrical characterization of a single Ti3C2Tz flake with a lateral size of about 10 μm was performed. These measurements, the first for MXene, demonstrated its metallic nature, along with determining the nature of the charge carriers and their mobility. This indicates that Ti3C2Tz is inherently of 2D nature independent of the number of stacked layers, unlike graphene, where the electronic properties change based on the number of stacked layers.Changing the transition metal from Ti to Nb, viz. comparing Ti2CTz and Nb2CTz thin films, the electronic properties and electronic conduction mechanism differ. Ti2CTz showed metallic-like behavior (resistivity increases with increasing temperature) unlike Nb2CTz where the conduction occurs via variable range hopping mechanism (VRH) - where resistivity decreases with increasing temperature.Furthermore, these studies show the synthesis of pure Mo2CTz in the form of single flakes and freestanding films made by filtering Mo2CTz colloidal suspensions. Electronic characterization of free-standing films made from delaminated Mo2CTz flakes was investigated, showing that a VRH mechanism prevails at low temperatures (7 to ≈ 60 K). Upon vacuum annealing, the room temperature, RT, conductivity of Mo2CTx increased by two orders of magnitude. The conduction mechanism was concluded to be VRH most likely dominated by hopping within each flake.Other Mo-based MXenes, Mo2TiC2Tz and Mo2Ti2C3Tz, showed VRH mechanism at low temperature. However, at higher temperatures up to RT, the transport mechanism was not clearly understood. Therefore, a part of this thesis was dedicated to further investigating the transport properties of Mo-based MXenes. This includes Mo2CTz, out-of-plane ordered Mo2TiC2Tz and Mo2Ti2C3Tz, and vacancy ordered Mo1.33CTz. Magneto-transport of free-standing thin films of the Mo-based MXenes were studied, showing that all Mo-based MXenes have two transport regimes: a VRH mechanism at lower temperatures and a thermally activated process at higher temperatures. All Mo-based MXenes except Mo1.33CTz show that the electrical transport is dominated by inter-flake transfer. As for Mo1.33CTz, the primary electrical transport mechanism is more likely to be intra-flake.The synthesis of vacancy ordered MXenes (Mo1.33CTz and W1.33CTz) raised the question of possible introduction of vacancies in all MXenes. Vacancy ordered MXenes are produced by selective etching of Al and (Sc or Y) atoms from the parent 3D MAX phases, such as (Mo2/3Sc1/3)2AlC, with in-plane chemical ordering of Mo and Sc. However, not all quaternary parent MAX phases form the in-plane chemical ordering of the two M metals; thus the synthesis of the vacancy-ordered MXenes is restricted to a very limited number of MAX phases. I present a new method to obtain MXene flakes with disordered vacancies that may be generalized to all quaternary MAX phases. As proof of concept, I chose Nb-C MXene, as this 2D material has shown promise in several applications, including energy storage, photothermal cell ablation and photocatalysts for hydrogen evolution. Starting from synthetizing (Nb2/3Sc1/3)2AlC quaternary solid solution and etching both the Sc and Al atoms resulted in Nb1.33C material with a large number of vacancies and vacancy clusters. This method may be applicable to other quaternary or higher MAX phases wherein one of the transition metals is more reactive than the other, and it could be of vital importance in applications such as catalysis and energy storage.
|
|
