| 1. |
- Moberg, Christina, et al.
(författare)
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De unga gör helt rätt när de stämmer staten
- 2022
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Ingår i: Aftonbladet. - 1103-9000.
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Tidskriftsartikel (populärvet., debatt m.m.)abstract
- 1 620 forskare och lärare i forskarvärlden: Vi ställer oss bakom Auroras klimatkrav
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| 2. |
- Rogström, Lina, et al.
(författare)
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Age hardening in arc-evaporated ZrAlN thin films
- 2010
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Ingår i: Scripta Materialia. - Amsterdam : Elsevier Science B.V.. - 1359-6462 .- 1872-8456. ; 62:10, s. 739-741
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Tidskriftsartikel (refereegranskat)abstract
- Zr0.44Al0.56N1.20 films were deposited by reactive arc evaporation on WC-Co substrates. As-deposited films have a defect-rich NaCl-cubic and wurtzite phase mixture. During annealing at 1100 degrees C the films undergo simultaneous recovery of the ZrN-rich c-ZrAlN nanoscale domains and formation of semicoherent w-ZrAlN nanobricks, while the excess nitrogen is released. This process results in an age hardening effect as high as 36%, as determined by nanoindentation. At 1200 degrees C, the w-AlN recrystallizes and the hardening effect is lost.
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| 3. |
- Rogström, Lina, et al.
(författare)
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Thermal stability and mechanical properties of arc evaporated ZrN/ZrAlN multilayers
- 2010
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Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 519:2, s. 694-699
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Tidskriftsartikel (refereegranskat)abstract
- ZrN1.20/Zr0.44Al0.56N1.20 multilayer films as well as ZrN1.17 and Zr0.44Al0.56N1.20 films were deposited by reactive arc evaporation on WC–Co substrates. Samples were post-deposition annealed for 2 h at 800–1200 °C. As-deposited and heat treated films were characterized by scanning transmission electron microscopy, X-ray diffraction and nanoindentation. The thermal stability was studied using a combination of differential scanning calorimetry, thermogravimetry, and mass spectrometry. The as-deposited Zr0.44Al0.56N1.20 film exhibits a nanocomposite structure of cubic and wurtzite ZrAlN. During annealing, the formation of ZrN- and AlN-rich domains results in age hardening of both the Zr0.44Al0.56N1.20 and the ZrN/ZrAlN multilayers. The age hardening is enhanced in the ZrN/ZrAlN multilayer due to straining of the ZrAlN sublayers in which a maximum hardness of 31 GPa is obtained after annealing at 1100 °C.
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| 4. |
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| 5. |
- Abom, A.E., et al.
(författare)
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Characterization of the metal-insulator interface of field-effect chemical sensors
- 2003
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 93:12, s. 9760-9768
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Tidskriftsartikel (refereegranskat)abstract
- The metal-insulator interface of hydrogen-sensitive metal-insulator-semiconductor capacitors, with SiO2 as the insulator and Pt as the metal contact, was discussed. It was found that the difference in hydrogen response between differently prepared devices was explained by a difference in concentration of available adsorption sites. The analysis showed that the concentration of Pt atoms in contact with the oxide affected both the hydrogen response and the metal-oxide adhesion.
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| 6. |
- Abom, A.E., et al.
(författare)
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Influence of gate metal film growth parameters on the properties of gas sensitive field-effect devices
- 2002
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Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 409:2, s. 233-242
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Tidskriftsartikel (refereegranskat)abstract
- Thin films of Pt have been grown as gate metals on the oxide surface of gas sensitive field-effect devices. Both electron beam evaporation and dc magnetron sputtering has been used. The energy of the impinging Pt atoms, the substrate temperature and the thickness of the Pt film were used as parameters in this study. The influence of the growth parameters on the gas response has been investigated and compared with the properties of the films, studied by transmission electron microscopy, Auger electron spectroscopy, X-ray photoelectron spectroscopy and X-ray diffraction. The conditions during growth of the Pt film are found to have a large impact on the properties of the device. As expected, crystallinity, morphology and the metal/substrate interfacial structure are also affected by processing parameters. Three different growth processes stand out as the most promising from gas sensor considerations, namely room temperature evaporation, sputtering at high pressures and sputtering at high temperatures. The correlation between gas responses and properties of the gas sensitive layer is discussed. © 2002 Elsevier Science B.V. All rights reserved.
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| 7. |
- Abom, A.E., et al.
(författare)
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Thin oxide films as surface modifiers of MIS field effect gas sensors
- 2002
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Ingår i: Sensors and actuators. B, Chemical. - 0925-4005 .- 1873-3077. ; 85:1-2, s. 109-119
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Tidskriftsartikel (refereegranskat)abstract
- The catalytic activity at the surface of Pt based MIS field effect gas sensors is modified by the deposition of thin films of SnO2, Al2O3 and SiO2, grown by reactive sputtering. It is found that a very thin layer (<10 nm) of SiO2 and SnO2 changes the catalytic activity towards higher NH3 selectivity, but with thicker films the sensor response vanishes. Since the response mechanism for these sensors is dependent on dissociation of molecules, it is likely that at low temperatures (140 °C), neither dissociation on nor transport/diffusion through the thicker films takes place. However, with Pt in conjunction with SiO2 or SnO2, the surface reactions will be altered, with enhanced NH3 selectivity as a result. A thin film of Al2O3, on the other hand, has a much smaller influence on the gas response to the test gases used in this work. Furthermore the sputtering process is found to strongly influence the sensor responses, and specifically reduce the sensitivity of the sensor. A thin intermediate layer of evaporated Pt does not completely protect the underlying structure from sputter induced damage. © 2002 Elsevier Science B.V. All rights reserved.
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| 8. |
- Aili, Carola, 1963-, et al.
(författare)
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Research on teachers' professional lives : time to build a research network. Paper presented at NERA's 31st Congress, 6-9 March, Copenhagen
- 2003
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Konferensbidrag (refereegranskat)abstract
- Teachers’ work has during the last ten years gone through great changes. The effects of postmodern society has made the work more and morecomplex and difficult to handle and understand for those involved as well as outsiders. Researchers are trying to keep up with things. The developmentof knowledge of teachers’ work takes place on different levels, in separate disciplines, from various starting-points and with different foci.To be able to describe, understand and explain the »new« work of teachers in a vigorous way there is need of getting these research initiativestogether. Arenas should be established where interchanges and coordination between researchers could take place. In order to make this happen wehave the intention of building a Swedish (our aim is to expand the network to the Nordic countries after the establishment in Sweden) network ofresearch on teachers’ professional lives.Besides presenting the intention and design of our network we also bring along some examples of research projects in line with the network ideas.
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| 9. |
- Aili, Carola, et al.
(författare)
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Research on teachers' professional lives : time to build a research network. Paper presented at NERA's 31st Congress, 6-9 March, Copenhagen
- 2003
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Teachers’ work has during the last ten years gone through great changes. The effects of postmodern society has made the work more and morecomplex and difficult to handle and understand for those involved as well as outsiders. Researchers are trying to keep up with things. The developmentof knowledge of teachers’ work takes place on different levels, in separate disciplines, from various starting-points and with different foci.To be able to describe, understand and explain the »new« work of teachers in a vigorous way there is need of getting these research initiativestogether. Arenas should be established where interchanges and coordination between researchers could take place. In order to make this happen wehave the intention of building a Swedish (our aim is to expand the network to the Nordic countries after the establishment in Sweden) network ofresearch on teachers’ professional lives.Besides presenting the intention and design of our network we also bring along some examples of research projects in line with the network ideas.
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| 10. |
- Berlind, Torun, 1965-, et al.
(författare)
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Microstructure, mechanical properties, and wetting behaviorof Si-C-N thin films grown by reactive magnetron sputtering
- 2001
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Ingår i: Surface and Coatings Technology. - : Elsevier. - 0257-8972. ; 141:2-3, s. 145-155
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Tidskriftsartikel (refereegranskat)abstract
- Silicon–carbon–nitride (Si–C–N) thin films were deposited by reactive magnetron co-sputtering of C and Si targets in a mixed Ar/N2 discharge. Films were grown to a thickness of more than 0.5 μm on graphite and Si(001) substrates held at a negative floating potential of −35 V, and substrate temperature between 100 and 700°C. The total pressure was constant at 0.4 Pa (3 mtorr), and the nitrogen fraction in the gas mixture was varied between 0 and 100%. As-deposited films were analyzed with respect to composition, state of chemical bonding, microstructure, mechanical properties, and wetting behavior by Rutherford backscattering spectroscopy (RBS), energy dispersive spectroscopy (EDS), X-ray photoelectron spectrometry (XPS), transmission electron microscopy (TEM), scanning electron microscopy (SEM), nanoindentation and contact angle measurements, respectively. Depending on the deposition condition, ternary SixCyNz films within the composition range 1≤x≤34 at.%, 34≤y≤81 at.%, and 16.5≤z≤42 at.% were prepared with a textured, amorphous-to-graphite-like microstructure. For Si–C–N films with low Si content, C---C, C---N and Si---C bonds were present. At higher Si content, N preferentially bonds to Si, while less C---N bonds were observed. Films containing more than 12 at.% of Si contained widely dispersed crystallites, 2–20 nm in diameter. Incorporation of a few at.% Si resulted in a dramatic reduction of the film surface energy compared to pure CN films. The measured contact angles using distilled water and glycerol liquids were for some films comparable with those on a polytetrafluoroethylene (PTFE), Teflon® surface. The hardness of Si–C–N films could be varied over the range 9–28 GPa.
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