| 1. |
- Abadie, J., et al.
(författare)
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Search for Gravitational Waves Associated with Gamma-Ray Bursts during LIGO Science Run 6 and Virgo Science Runs 2 and 3
- 2012
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Ingår i: Astrophysical Journal. - 0004-637X. ; 760:1
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Tidskriftsartikel (refereegranskat)abstract
- We present the results of a search for gravitational waves associated with 154 gamma-ray bursts (GRBs) that were detected by satellite-based gamma-ray experiments in 2009-2010, during the sixth LIGO science run and the second and third Virgo science runs. We perform two distinct searches: a modeled search for coalescences of either two neutron stars or a neutron star and black hole, and a search for generic, unmodeled gravitational-wave bursts. We find no evidence for gravitational-wave counterparts, either with any individual GRB in this sample or with the population as a whole. For all GRBs we place lower bounds on the distance to the progenitor, under the optimistic assumption of a gravitational-wave emission energy of 10(-2) M-circle dot c(2) at 150 Hz, with a median limit of 17 Mpc. For short-hard GRBs we place exclusion distances on binary neutron star and neutron-star-black-hole progenitors, using astrophysically motivated priors on the source parameters, with median values of 16 Mpc and 28 Mpc, respectively. These distance limits, while significantly larger than for a search that is not aided by GRB satellite observations, are not large enough to expect a coincidence with a GRB. However, projecting these exclusions to the sensitivities of Advanced LIGO and Virgo, which should begin operation in 2015, we find that the detection of gravitational waves associated with GRBs will become quite possible.
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| 2. |
- Buiu, O., et al.
(författare)
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Extracting the relative dielectric constant for "high-k layers" from CV measurements : Errors and error propagation
- 2007
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Ingår i: Microelectronics and reliability. - : Elsevier BV. - 0026-2714 .- 1872-941X. ; 47:4-5, s. 678-681
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Tidskriftsartikel (refereegranskat)abstract
- The paper pursues an investigation of the errors associated with the extraction of the dielectric constant (i.e., kappa value) from capacitance-voltage measurements on metal oxide semiconductor capacitors. The existence of a transition layer between the high-rc dielectric and the silicon substrate is a factor that affects - in general - the assessment of the electrical data, as well as the extraction of rc. A methodology which accounts for this transition layer and the errors related to other parameters involved in the k value extraction is presented; moreover, we apply this methodology to experimental CV results on HfO2/SiOx/Si structures produced in different conditions.
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| 3. |
- Cherkaoui, K., et al.
(författare)
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High-k/InGaAs interface defects at cryogenic temperature
- 2023
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Ingår i: Solid-State Electronics. - 0038-1101. ; 207
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Tidskriftsartikel (refereegranskat)abstract
- Oxide defects in the high-k/InGaAs MOS system are investigated. The behaviour of these traps is explored from room temperature down to 10 K. This study reveals that the exchange of free carriers between oxide states and either the conduction or the valence band is strongly temperature dependant. The capture and emission of electrons is strongly suppressed at 10 K as demonstrated by the collapse of the capacitance frequency dispersion in accumulation for n-InGaAs MOS devices, though hysteresis in the C-V sweeps is still present at 10 K. Phonon assisted tunnelling processes are considered in the simulation of electrical characteristics. The simulated data match very well the experimental characteristics and provide energy and spatial mapping of oxide defects. The multi phonon theory also help explain the impedance data temperature dependence. This study also reveals an asymmetry in the free carrier trapping between n and p type devices, where hole trapping is more significant at 10 K.
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| 4. |
- Engstrom, O., et al.
(författare)
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Navigation aids in the search for future high-k dielectrics : Physical and electrical trends
- 2007
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 51:4, s. 622-626
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Tidskriftsartikel (refereegranskat)abstract
- From experimental literature data on metal oxides combined with theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investigated so far have properties meeting the demands for k and energy band offset values in the development of CMOS down to 22 nm. (c) 2007 Elsevier Ltd. All rights reserved.
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| 5. |
- Engström, Olof, 1943, et al.
(författare)
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A generalised methodology for oxide leakage current metric
- 2008
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Ingår i: Proceeding of 9th European Workshop on Ultimate Integration of Silicon (ULIS), Udine, Italy. - 9781424417308 ; , s. 167-
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Konferensbidrag (refereegranskat)abstract
- From calculations of semiconductor interfacecharge, oxide voltage and tunneling currents for MOSsystems with equivalent oxide thickness (EOT) in therange of 1 nm, rules are suggested for making itpossible to compare leakage quality of different oxideswith an accuracy of a factor 2 – 3 if the EOT is known.The standard procedure suggested gives considerablybetter accuracy than the commonly used method todetermine leakage at VFB+1V for n-type and VFB-1V forp-type substrates.
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| 6. |
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| 9. |
- Gomeniuk, Y. Y., et al.
(författare)
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Electrical properties of high-k LaLuO3 gate oxide for SOI MOSFETs
- 2011
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Ingår i: 6th International Workshop on Semiconductor-on-Insulator Materials and Devices. - 9783037851784 ; , s. 87-93
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Konferensbidrag (refereegranskat)abstract
- The paper presents the results of electrical characterization of MOS capacitors and SOI MOSFETs with novel high-? LaLuO3 dielectric as a gate oxide. The energy distribution of interface state density at LaLuO 3/Si interface is presented and typical maxima of 1.2×10 11 eV-1cm-2 was found at about 0.25 eV from the silicon valence band. The output and transfer characteristics of the n- and p-MOSFET (channel length and width were 1 μm and 50 μm, respectively) are presented. The front channel mobility appeared to be 126 cm2V -1s-1 and 70 cm2V-1s-1 for n- and p-MOSFET, respectively. The front channel threshold voltages as well as the density of states at the back interface are presented.
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| 10. |
- Gottlob, H. D. B., et al.
(författare)
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Gd silicate : A high-k dielectric compatible with high temperature annealing
- 2009
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Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567 .- 2166-2754 .- 2166-2746. ; 27:1, s. 249-252
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Tidskriftsartikel (refereegranskat)abstract
- The authors report on the investigation of amorphous Gd-based silicates as high-k dielectrics. Two different stacks of amorphous gadolinium oxide (Gd(2)O(3)) and silicon oxide (SiO(2)) on silicon substrates are compared after annealing at temperatures up to 1000 degrees C. Subsequently formed metal oxide semiconductor capacitors show a significant reduction in the capacitance equivalent thicknesses after annealing. Transmission electron microscopy, medium energy ion scattering, and x-ray diffraction analysis reveal distinct structural changes such as consumption of the SiO(2) layer and formation of amorphous Gd silicate. The controlled formation of Gd silicates in this work indicates a route toward high-k dielectrics compatible with conventional, gate first complementary metal-oxide semiconductor integration schemes.
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