| 1. |
- Hakansson, M C, et al.
(författare)
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The electronic structure of In- and As-terminated InAs(001) surfaces
- 1997
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Ingår i: Surface Science. - 0039-6028 .- 1879-2758. ; 374:1-3, s. 73-79
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Tidskriftsartikel (refereegranskat)abstract
- The InAs(001) 2 x 4 and 4 x 2 surfaces have been investigated by angle-resolved photoemission. The X(3) and X(5) points were found to be located 6.0 and 2.7 eV below the valence band maximum, respectively, and the dispersion of bulk bands along the Gamma-X direction in the bulk Brillouin zone were well described by a theoretical calculation. From angle-resolved valence band spectra measured along the high symmetry directions [110] and [1(1) over bar0$], three surface induced stares were identified on both the InAs(001)4 x 2 and the InAs(001)2 x 4 surface. (C) 1997 Elsevier Science B.V.
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| 2. |
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| 3. |
- Andersson, C B M, et al.
(författare)
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Surface atomic structure of InAs((111)over-bar)2x2 and InSb((111)over-bar)2x2 studied by core level spectroscopy
- 1996
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 347:1-2, s. 199-206
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Tidskriftsartikel (refereegranskat)abstract
- Surface sensitive high resolution core level spectroscopy has been applied to the molecular beam epitaxy grown InAs((111) over bar)2 x 2 and InSb((111) over bar)2 x 2 surfaces. For both systems the In 4d core level consists of one dominating component while the Group V core levels are deconvoluted into four components. This analysis is consistent with a surface model where the topmost layer consists entirely of arsenic or antimony. In this model, Group V atoms form trimers bound to Group V atoms in the first double layer, leaving a single Group V rest atom per unit cell.
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| 4. |
- Olsson, L O, et al.
(författare)
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Charge accumulation at InAs surfaces
- 1996
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Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 76:19, s. 3626-3629
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Tidskriftsartikel (refereegranskat)abstract
- Angle-resolved photoelectron spectroscopy has been used to directly prove the existence of a charge accumulation layer at clean InAs surfaces. The formation of an accumulation layer is shown to be a common property of polar InAs surfaces, with the precise surface Fermi level position above the conduction band minimum determined by the surface geometry. The emission from states in the accumulation layer is studied with respect to its photon energy and angular dependence.
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| 5. |
- Olsson, L O, et al.
(författare)
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Core level and valence-band studies of the (111)2x2 surfaces of InSb and InAs
- 1996
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 53:8, s. 4734-4740
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Tidskriftsartikel (refereegranskat)abstract
- The valence and core electronic surface states on the (111)2X2 surfaces of InSb and InAs have been studied by angle-resolved photoelectron spectroscopy. Similarities in data show that the vacancy-buckling model, which is known to describe the InSb(111)2x2 surface, also applies to InAs(111)2X2. Three surface valence bands are identified and their dispersions are mapped along symmetry directions in the surface Brillouin zone. The In 4d core levels show one surface shifted component while no surface shifted components of the Sb 4d or As 3d core levels could be resolved.
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| 6. |
- Varekamp, P R, et al.
(författare)
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Angle-resolved photoemission spectroscopy of the 1x1 ordered overlayers on iodine-saturated GaAs(001) and InAs(001)
- 1996
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 352, s. 387-390
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Tidskriftsartikel (refereegranskat)abstract
- Angle-resolved valence band photoelectron spectra are collected from 1 X 1 ordered overlayers on I-2-saturated GaAs(001)-4 x 1, -c(2 X 8), and InAs(001)-c(8 x 2). A high-intensity dispersive surface state, located approximately 4.4 eV below the valence band maximum, is observed in each case. The state passes through an open lens in the projected bulk density of states and disperses symmetrically around the surface Brillouin zone edge. For all surfaces studied, the state is stronger when excited with the electric field polarized in the [110], as compared to the <(1)over bar 10>], azimuth. Since the state is independent of the termination of the initial surface, and since iodine bonds primarily to the outermost element, the state must result from delocalization of the electron states in the overlayer, and is not related to bonding with the substrate.
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| 7. |
- Adell, M, et al.
(författare)
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Photoemission studies of the annealing-induced modifications of Ga0.95Mn0.05As
- 2004
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Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 70:12: 125204
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Tidskriftsartikel (refereegranskat)abstract
- Using angle resolved photoemission we have investigated annealing-induced changes in Ga1-xMnxAs with x=0.05. We find that the position of the Fermi energy is a function of annealing time and temperature. It is also established that the Curie temperature is strongly correlated to the separation between the Fermi level and the valence band maximum. Valence band photoemission shows that the Mn3d spectrum is modified by the annealing treatments.
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| 8. |
- Adell, M., et al.
(författare)
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Photoemission study of the valence band offset between low temperature GaAs and (GaMn)As
- 2006
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89:17
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Tidskriftsartikel (refereegranskat)abstract
- Using synchrotron based photoelectron spectroscopy (GaMn) AsGaAs interfaces prepared in situ by low temperature molecular beam epitaxy have been studied. No band offset between the two systems is observed. The continuous transition is explained as an effect of dilution of the (GaMn)As by GaAs adlayers.
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| 9. |
- ANDERSSON, CBM, et al.
(författare)
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CORE-LEVEL PHOTOEMISSION FROM (III)-TYPE INAS SURFACES
- 1994
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Ingår i: Journal de Physique IV. - : EDP Sciences. - 1155-4339 .- 1764-7177. ; 4:C9, s. 209-212
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Tidskriftsartikel (refereegranskat)abstract
- The InAs(111)2x2 and InAs(($$$) over bar 111)1x1 surfaces have been studied with high resolution core level spectroscopy. For the InAs(($$$) over bar 111)1x1 surface both the In 4d and the As 3d core levels display strong surface core level shifts, while for the InAs(111)2x2 surface only the In 4d level shows a detectable surface shift. The results indicate that the InAs(($$$) over bar 111)1x1 surface is relaxed, with atom layer displacement extending to subsurface layers. Unexpectedly, we find no surface shifted anion core level for the InAs(111)2x2 surface.
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| 10. |
- ANDERSSON, CBM, et al.
(författare)
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SPUTTERED AND ANNEALED INAS(111)OVER-BAR - AN UNRECONSTRUCTED SURFACE
- 1994
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 307, s. 885-889
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Tidskriftsartikel (refereegranskat)abstract
- The electronic structure of the InAs(111BAR)1 X 1 surface has been investigated by angle resolved photoelectron spectroscopy along the symmetry lines GAMMAKBAR, GAMMAMBAR, and GAMMAMBAR of the surface Brillouin zone. The bulk valence band structure was calculated using a combination of the linear augmented plane-wave method and the relativistic augmented plane-wave method. We have projected the theoretical bulk band structure onto the surface Brillouin zone to separate surface states from surface resonances. Two surface related structures, S1 and S2, have been observed and their E(i)(k(parallel-to)) dispersions are established. Both S1 and S2 show the symmetry of the 1 X 1 surface Brillouin zone, which is consistent with the observed 1 X 1 LEED pattern. We identify S1 as the As-derived dangling bond state, and S2 is associated with the backbonds connecting the As atoms in the surface layer with the underlying In layer.
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