| 1. |
- Davidsson, Joel, 1989-, et al.
(författare)
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ADAQ : Automatic workflows for magneto-optical properties of point defects in semiconductors
- 2021
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Ingår i: Computer Physics Communications. - : Elsevier. - 0010-4655 .- 1879-2944. ; 269
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Tidskriftsartikel (refereegranskat)abstract
- Automatic Defect Analysis and Qualification (ADAQ) is a collection of automatic workflows developed for high-throughput simulations of magneto-optical properties of point defects in semiconductors. These workflows handle the vast number of defects by automating the processes to relax the unit cell of the host material, construct supercells, create point defect clusters, and execute calculations in both the electronic ground and excited states. The main outputs are the magneto-optical properties which include zero-phonon lines, zero-field splitting, and hyperfine coupling parameters. In addition, the formation energies are calculated. We demonstrate the capability of ADAQ by performing a complete characterization of the silicon vacancy in silicon carbide in the polytype 4H (4H-SiC).
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| 2. |
- Davidsson, Joel, 1989-
(författare)
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Color Centers in Semiconductors for Quantum Applications : A High-Throughput Search of Point Defects in SiC
- 2021
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Point defects in semiconductors have been and will continue to be relevant for applications. Shallow defects realize transistors, which power the modern age of information, and in the not-too-distant future, deep-level defects could provide the foundation for a revolution in quantum information processing. Deep-level defects (in particular color centers) are also of interest for other applications such as a single photon emitter, especially one that emits at 1550 nm, which is the optimal frequency for long-range communication via fiber optics.First-principle calculations can predict the energies and optical properties of point defects. I performed extensive convergence tests for magneto-optical properties, such as zero phonon lines, hyperfine coupling parameters, and zero-field splitting for the four different configurations of the divacancy in 4H-SiC. Comparing the converged results with experimental measurements, a clear identification of the different configurations was made. With this approach, I also identified all configurations for the silicon vacancy in 4H-SiC as well as the divacancy and silicon vacancy in 6H-SiC. The same method was further used to identify two additional configurations belonging to the divacancy present in a 3C stacking fault inclusion in 4H-SiC. I extended the calculated properties to include the transition dipole moment which provides the polarization, intensity, and lifetime of the zero phonon lines. When calculating the transition dipole moment, I show that it is crucial to include the self-consistent change of the electronic orbitals in the excited state due to the geometry relaxation. I tested the method on the divacancy in 4H-SiC, further strengthening the previous identification and providing accurate photoluminescence intensities and lifetimes.Finding stable point defects with the right properties for a given application is a challenging task. Due to the vast number of possible point defects present in bulk semiconductor materials, I designed and implemented a collection of automatic workflows to systematically investigate any point defects. This collection is called ADAQ (Automatic Defect Analysis and Qualification) and automates every step of the theoretical process, from creating defects to predicting their properties. Using ADAQ, I screened about 8000 intrinsic point defect clusters in 4H-SiC. This thesis presents an overview of the formation energy and the most relevant optical properties for these single and double point defects. These results show great promise for finding new color centers suitable for various quantum applications.
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| 3. |
- Davidsson, Joel, 1989-, et al.
(författare)
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Exhaustive characterization of modified Si vacancies in 4H-SiC
- 2022
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Ingår i: Nanophotonics. - : Walter de Gruyter. - 2192-8606 .- 2192-8614. ; 11:20, s. 4565-4580
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Tidskriftsartikel (refereegranskat)abstract
- The negatively charged silicon vacancy (V-Si(-)) in silicon carbide is a well-studied point defect for quantum applications. At the same time, a closer inspection of ensemble photoluminescence and electron paramagnetic resonance measurements reveals an abundance of related but so far unidentified signals. In this study, we search for defects in 4H-SiC that explain the above magneto-optical signals in a defect database generated by automatic defect analysis and qualification (ADAQ) workflows. This search reveals only one class of atomic structures that exhibit silicon-vacancy-like properties in the data: a carbon anti-site (C-Si) within sub-nanometer distances from the silicon vacancy only slightly alters the latter without affecting the charge or spin state. Such a perturbation is energetically bound. We consider the formation of V-Si(-) + C-Si; up to 2 nm distance and report their zero phonon lines and zero field splitting values. In addition, we perform high-resolution photoluminescence experiments in the silicon vacancy region and find an abundance of lines. Comparing our computational and experimental results, several configurations show great agreement. Our work demonstrates the effectiveness of a database with high-throughput results in the search for defects in quantum applications.
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| 4. |
- Hesselmeier, Erik, et al.
(författare)
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Qudit-Based Spectroscopy for Measurement and Control of Nuclear-Spin Qubits in Silicon Carbide
- 2024
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Ingår i: Physical Review Letters. - : American Physical Society. - 0031-9007 .- 1079-7114. ; 132:9
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Tidskriftsartikel (refereegranskat)abstract
- Nuclear spins with hyperfine coupling to single electron spins are highly valuable quantum bits. Here we probe and characterize the particularly rich nuclear-spin environment around single silicon vacancy color centers (V2) in 4H-SiC. By using the electron spin-3/2 qudit as a four level sensor, we identify several sets of Si29 and C13 nuclear spins through their hyperfine interaction. We extract the major components of their hyperfine coupling via optical detected nuclear magnetic resonance, and assign them to shells in the crystal via the density function theory simulations. We utilize the ground-state level anticrossing of the electron spin for dynamic nuclear polarization and achieve a nuclear-spin polarization of up to 98±6%. We show that this scheme can be used to detect the nuclear magnetic resonance signal of individual spins and demonstrate their coherent control. Our work provides a detailed set of parameters and first steps for future use of SiC as a multiqubit memory and quantum computing platform.
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| 5. |
- Li, Song, et al.
(författare)
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Carbon defect qubit in two-dimensional WS2
- 2022
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Ingår i: Nature Communications. - : Nature Portfolio. - 2041-1723. ; 13:1
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Tidskriftsartikel (refereegranskat)abstract
- Identifying and fabricating defect qubits in two-dimensional semiconductors are of great interest in exploring candidates for quantum information and sensing applications. A milestone has been recently achieved by demonstrating that single defect, a carbon atom substituting sulphur atom in single layer tungsten disulphide, can be engineered on demand at atomic size level precision, which holds a promise for a scalable and addressable unit. It is an immediate quest to reveal its potential as a qubit. To this end, we determine its electronic structure and optical properties from first principles. We identify the fingerprint of the neutral charge state of the defect in the scanning tunnelling spectrum. In the neutral defect, the giant spin-orbit coupling mixes the singlet and triplet excited states with resulting in phosphorescence at the telecom band that can be used to read out the spin state, and coherent driving with microwave excitation is also viable. Our results establish a scalable qubit in a two-dimensional material with spin-photon interface at the telecom wavelength region. Recent work has demonstrated controlled fabrication of single carbon defect spins in the two-dimensional material WS2. Here, the authors use ab initio methods to determine the electronic and optical properties of this defect, establishing it as a viable qubit candidate operating close to the telecom band.
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| 6. |
- Wirtitsch, D., et al.
(författare)
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Exploiting ionization dynamics in the nitrogen vacancy center for rapid, high-contrast spin, and charge state initialization
- 2023
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Ingår i: Physical Review Research. - : AMER PHYSICAL SOC. - 2643-1564. ; 5:1
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Tidskriftsartikel (refereegranskat)abstract
- We propose and experimentally demonstrate a method to strongly increase the sensitivity of spin measure-ments on nitrogen vacancy (NV) centers in diamond, which can be readily implemented in existing quantum sensing experiments. While charge state transitions of this defect are generally considered a parasitic effect to be avoided, we show here that these can be used to significantly increase the NV centers spin contrast, a key quantity for high-sensitivity magnetometry and high-fidelity state readout. The protocol consists of a two-step procedure, in which the charge state of the defect is first purified by a strong laser pulse, followed by weak illumination to obtain high spin polarization. We observe a relative improvement of the readout contrast by 17% and infer a reduction of the initialization error of more than 50%. The contrast enhancement is accompanied by a beneficial increase of the readout signal. For long sequence durations, typically encountered in high-resolution magnetometry, a measurement speedup by a factor of >1.5 is extracted, and we find that the technique is beneficial for sequences of any duration. Additionally, our findings give detailed insight into the charge and spin polarization dynamics of the NV center and provide actionable insights for direct optical, spin-to-charge, and electrical readout of solid-state spin centers.
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