| 1. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Tunable laser spectroscopy of spin injection in ZnMnSe/ZnCdSe quantum structures
- 2002
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:12, s. 2196-
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Tidskriftsartikel (refereegranskat)abstract
- Magneto-optical spectroscopy in combination with tunable laser excitation is employed to study exciton spin alignment and injection in ZnMnSe/ZnCdSe quantum structures. This approach enables us to selectively create preferred spin orientation and to separately monitor subsequent spin injection from individual spin states, thus shedding light on a possible source of spin loss. It is shown that the limited spin polarization in a nonmagnetic quantum well due to spin injection from a ZnMnSe-based diluted magnetic semiconductor (DMS) is not caused by a limited degree of spin alignment in the DMS, which is in fact complete, but rather occurs during subsequent processes.
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| 2. |
- Cattelan, Mattia, et al.
(författare)
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Anodization study of epitaxial graphene : insights on the oxygen evolution reaction of graphitic materials
- 2019
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Ingår i: Nanotechnology. - : Institute of Physics Publishing (IOPP). - 0957-4484 .- 1361-6528. ; 30:28
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Tidskriftsartikel (refereegranskat)abstract
- The photoemission electron microscopy and x-ray photoemission spectroscopy were utilized for the study of anodized epitaxial graphene (EG) on silicon carbide as a fundamental aspect of the oxygen evolution reaction on graphitic materials. The high-resolution analysis of surface morphology and composition quantified the material transformation during the anodization. We investigated the surface with lateral resolution amp;lt;150 nm, revealing significant transformations on the EG and the role of multilayer edges in increasing the film capacitance.
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| 3. |
- Chih-Wei, Chih-Wei, et al.
(författare)
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Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
- 2020
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Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 117:9
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Tidskriftsartikel (refereegranskat)abstract
- Indium nitride (InN) is a highly promising material for high frequency electronics given its low bandgap and high electron mobility. The development of InN-based devices is hampered by the limitations in depositing very thin InN films of high quality. We demonstrate growth of high-structural-quality nanometer thin InN films on 4H-SiC by atomic layer deposition (ALD). High resolution x-ray diffraction and transmission electron microscopy show epitaxial growth and an atomically sharp interface between InN and 4H-SiC. The InN film is fully relaxed already after a few atomic layers and shows a very smooth morphology where the low surface roughness (0.14nm) is found to reproduce sub-nanometer surface features of the substrate. Raman measurements show an asymmetric broadening caused by grains in the InN film. Our results show the potential of ALD to prepare high-quality nanometer-thin InN films for subsequent formation of heterojunctions.
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| 4. |
- Donchev, V., et al.
(författare)
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High-temperature excitons in GaAs quantum wells embedded in AlAs/GaAs superlattices
- 2000
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Ingår i: Vacuum. - 0042-207X .- 1879-2715. ; 58:2, s. 478-484
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Tidskriftsartikel (refereegranskat)abstract
- Photoluminescence (PL) spectra of GaAs quantum wells embedded in short-period AlAs/GaAs superlattices have been measured at 2 K and at room temperature. Two approaches have been applied in order to investigate the mechanisms of radiative recombination in these structures. In the first one, we studied the excitation density dependence of the PL intensity. In the second approach a line-shape analysis of the PL spectra is performed by means of a statistical model, which includes both free exciton, and free carrier recombinations. The fit based on this model reproduces with high accuracy the experimental spectra and allows to assess the relative contributions of excitons and free carriers to the radiative recombination process. The results of both approaches indicate the predominance of free excitons in the radiative recombination at room temperature.
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| 5. |
- Donchev, V., et al.
(författare)
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Photoluminescene line-shape analysis in quantum wells embedded in superlattices
- 2001
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Ingår i: Materials science & engineering. C, biomimetic materials, sensors and systems. - 0928-4931 .- 1873-0191. ; 15:1-2, s. 75-77
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Tidskriftsartikel (refereegranskat)abstract
- The temperature evolution of the main photoluminescence (PL) mechanisms, in GaAs quantum wells embedded in short-period AlAs/GaAs superlattices, is investigated. PL spectra are measured from 2 to 300 K. A detailed line-shape analysis of the PL peaks is performed by means of a statistical model, including both free exciton and free carrier recombination. The fits based on this model reproduce satisfactorily the experimental PL line shapes and allow to assess quantitatively the relative contributions of free excitons and free carriers to the radiative recombination at different temperatures. The results indicate the predominant role of free excitons in the radiative recombination up to room temperature, and are consistent with the mass action law. © 2001 Elsevier Science B.V. All rights reserved.
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| 6. |
- Giannazzo, F., et al.
(författare)
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Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy
- 2019
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Ingår i: Nanotechnology. - : IOP PUBLISHING LTD. - 0957-4484 .- 1361-6528. ; 30:28
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, micro-Raman mapping and conductive atomic force microscopy (C-AFM) were jointly applied to investigate the structural and electrical homogeneity of quasi-free-standing monolayer graphene (QFMLG), obtained by high temperature decomposition of 4H-SiC(0001) followed by hydrogen intercalation at 900 degrees C. Strain and doping maps, obtained by Raman data, showed the presence of sub-micron patches with reduced hole density correlated to regions with higher compressive strain, probably associated with a locally reduced hydrogen intercalation. Nanoscale resolution electrical maps by C-AFM also revealed the presence of patches with enhanced current injection through the QFMLG/SiC interface, indicating a locally reduced Schottky barrier height (Phi(B)). The Phi(B) values evaluated from local I-V curves by the thermionic emission model were in good agreement with the values calculated for the QFMLG/SiC interface using the Schottky-Mott rule and the graphene holes density from Raman maps. The demonstrated approach revealed a useful and non-invasive method to probe the structural and electrical homogeneity of QFMLG for future nano-electronics applications.
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| 7. |
- Högberg, Hans, et al.
(författare)
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Reactive sputtering of CSx thin solid films using CS2 as precursor
- 2020
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Ingår i: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 182
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Tidskriftsartikel (refereegranskat)abstract
- We deposit CSx thin solid films by reactive direct current magnetron sputtering of a C target in an argon plasma, using carbon disulfide (CS2) as a precursor to film growth. We investigate the influence of the partial pressure of the CS2 vapor introduced into the plasma on the composition, the chemical bonding structure, the structural, and the mechanical properties as determined by x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, scanning electron microscopy (SEM), and nanoindentation for films deposited at 150 and 300 degrees C. The Raman and the XPS results indicate that S atoms are incorporated in mostly sp(2) bonded C network. These results agree with previous ab-initio theoretical findings obtained by modeling of the CSx compound by the Synthetic Growth Concept. The microstructure of the films as well as the results of their Raman characterization and the nano mechanical testing results all point out that with the increasing S content some spa bonding is admixed in the predominantly sp(2) bonded CSx network, leading to typical amorphous structure with short and interlocked graphene-like planes for S contents between 2% and 8%. We conclude that CSx thin solid films deposited by using CS2 as a precursor would be CSx films deposited at low temperature of similar to 150 degrees C and with an S content in the region of 6 at.% may be interesting candidates for applications as hard/elastic protective coatings.
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| 8. |
- Kakanakova-Gueorguieva, Anelia, et al.
(författare)
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MOCVD of AlN on epitaxial graphene at extreme temperatures
- 2021
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Ingår i: CrystEngComm. - : ROYAL SOC CHEMISTRY. - 1466-8033 .- 1466-8033. ; 23:2, s. 385-390
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Tidskriftsartikel (refereegranskat)abstract
- The initial stages of metal organic chemical vapor deposition (MOCVD) of AlN on epitaxial graphene at temperatures in excess of 1200 degrees C have been rationalized. The use of epitaxial graphene, in conjunction with high deposition temperatures, can deliver on the realization of nanometer thin AlN whose material quality is characterized by the appearance of luminescent centers with narrow spectral emission at room temperature. It has been elaborated, based on our previous comprehensive ab initio molecular dynamics simulations, that the impact of graphene on AlN growth consists in the way it promotes dissociation of the trimethylaluminum, (CH3)(3)Al, precursor with subsequent formation of Al adatoms during the initial stages of the deposition process. The high deposition temperatures ensure adequate surface diffusion of the Al adatoms which is an essential factor in material quality enhancement. The role of graphene in intervening with the dissociation of another precursor, trimethylgallium, (CH3)(3)Ga, has accordingly been speculated by presenting a case of propagation of ultrathin GaN of semiconductor quality. A lower deposition temperature of 1100 degrees C in this case has better preserved the structural integrity of epitaxial graphene. Breakage and decomposition of the graphene layers has been deduced in the case of AlN deposition at temperatures in excess of 1200 degrees C.
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| 9. |
- Kakanakova-Gueorguieva, Anelia, et al.
(författare)
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Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface
- 2020
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Ingår i: Nanoscale. - : ROYAL SOC CHEMISTRY. - 2040-3364 .- 2040-3372. ; 12:37, s. 19470-19476
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Tidskriftsartikel (refereegranskat)abstract
- The possibility for kinetic stabilization of prospective 2D AlN was explored by rationalizing metal organic chemical vapor deposition (MOCVD) processes of AlN on epitaxial graphene. From the wide range of temperatures which can be covered in the same MOCVD reactor, the deposition was performed at the selected temperatures of 700, 900, and 1240 degrees C. The characterization of the structures by atomic force microscopy, electron microscopy and Raman spectroscopy revealed a broad range of surface nucleation and intercalation phenomena. These phenomena included the abundant formation of nucleation sites on graphene, the fragmentation of the graphene layers which accelerated with the deposition temperature, the delivery of excess precursor-derived carbon adatoms to the surface, as well as intercalation of sub-layers of aluminum atoms at the graphene/SiC interface. The conceptual understanding of these nanoscale phenomena was supported by our previous comprehensiveab initiomolecular dynamics (AIMD) simulations of the surface reaction of trimethylaluminum, (CH3)(3)Al, precursor with graphene. A case of applying trimethylindium, (CH3)(3)In, precursor to epitaxial graphene was considered in a comparative way.
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| 10. |
- Khranovskyy, Volodymyr, et al.
(författare)
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Light emission enhancement from ZnO nanostructured films grown on Gr/SiC substrates
- 2016
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Ingår i: Carbon. - : Pergamon Press. - 0008-6223 .- 1873-3891. ; 99, s. 295-301
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Tidskriftsartikel (refereegranskat)abstract
- We report on the application of a single layer graphene substrates for the growth of polycrystalline ZnO films with advanced light emission properties. Unusually high ultraviolet (UV) and visible (VIS) photoluminesce was observed from the ZnO/Gr/SiC structures in comparison to identical samples without graphene. The photoluminescence intensity depends non-monotonically on the films thickness, reaching its maximum for 150 nm thick films. The phenomena observed is explained as due to the dual graphene role: i) the dangling bond free substrate, providing growth of relaxed thin ZnO layers ii) a back reflector active mirror of the Fabry-Perot cavity that is formed. The reported results demonstrate the potential of two-dimensional carbon materials integration with light emitting wide band gap semiconductors and can be of practical importance for the design of future optoelectronic devices.
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