| 1. |
- Chen, Zhihui, 1984-
(författare)
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Light manipulation in micro and nano photonic materials and structures
- 2012
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Light manipulation is an important method to enhance the light-matter interactions in micro and nano photonic materials and structures by generating usefulelectric field components and increasing time and pathways of light propagationthrough the micro and nano materials and structures. For example, quantum wellinfrared photodetector (QWIP) cannot absorb normal incident radiation so thatthe generation of an electric field component which is parallel to the original incident direction is a necessity for the function of QWIP. Furthermore, the increaseof time and pathways of light propagation in the light-absorbing quantum wellregion will increase the chance of absorbing the photons.The thesis presents the theoretical studies of light manipulation and light-matter interaction in micro and nano photonic materials and structures, aiming atimproving the performance of optical communication devices, photonic integrateddevices and photovoltaic devices.To design efficient micro and nano photonic devices, it is essential to knowthe time evolution of the electromagnetic (EM) field. Two-dimensional and three-dimensional finite-difference time-domain (FDTD) methods have been adopted inthe thesis to numerically solve the Maxwell equations in micro and nano photonicmaterials and structures.Light manipulation in micro and nano material and structures studied in thisthesis includes: (1) light transport in the photonic crystal (PhC) waveguide, (2)light diffraction by the micro-scale dielectric PhC and metallic PhC structures(gratings); and (3) exciton-polaritons of semiconductor quantum dots, (4) surfaceplasmon polaritons at semiconductor-metallic material interface for subwavelengthlight control. All these aspects are found to be useful in optical devices of multiplebeam splitter, quantum well/dot infrared photodetectors, and solar cells.
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| 2. |
- Choubina, Tatiana, 1950-, et al.
(författare)
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Light diffusion in GaN epilayers
- 2007
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Ingår i: 3rd International Conference on Spontaneous Coherence in Excitonic System,2007.
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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| 3. |
- Drexler, C., et al.
(författare)
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Terahertz radiation induced edge currents in graphene
- 2011
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Ingår i: RMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves. - 9781457705090
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Konferensbidrag (refereegranskat)abstract
- We report on the observation of the terahertz radiation induced edge photogalvanic effect. The directed net electric current is generated in single layer graphene by the irradiation of the samples' edges with linearly or circularly polarized terahertz laser radiation at normal incidence. We show that the directed net electric current stems from the sample edges, which reduce locally the symmetry and result in an asymmetric scattering of carriers driven by the radiation field.
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| 4. |
- Ganichev, S.D., et al.
(författare)
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Photon helicity driven currents in graphene
- 2010
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Ingår i: IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide. - 9781424466573
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- We report on the observation of photon helicity driven currents in graphene. We demonstrate that by illuminating unbiased monolayer graphene samples with terahertz (THz) laser radiation at room temperature under oblique and normal incidence causes directed electric currents. This includes currents which are solely driven by the light's helicity.
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| 5. |
- Karch, J., et al.
(författare)
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Dynamic Hall Effect Driven by Circularly Polarized Light in a Graphene Layer
- 2010
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Ingår i: Physical Review Letters. - : American Physical Society. - 0031-9007 .- 1079-7114. ; 105:22, s. 227402-
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Tidskriftsartikel (refereegranskat)abstract
- We report the observation of the circular ac Hall effect where the current is solely driven by the crossed ac electric and magnetic fields of circularly polarized radiation. Illuminating an unbiased monolayer sheet of graphene with circularly polarized terahertz radiation at room temperature generates-under oblique incidence-an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. Alike the classical dc Hall effect, the voltage is caused by crossed E and B fields which are, however rotating with the lights frequency.
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| 6. |
- Karch, J., et al.
(författare)
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Terahertz Radiation Driven Chiral Edge Currents in Graphene
- 2011
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Ingår i: Physical Review Letters. - : American Physical Society. - 1079-7114 .- 0031-9007. ; 107:27
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Tidskriftsartikel (refereegranskat)abstract
- We observe photocurrents induced in single-layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its winding direction reverses by switching the light helicity from left to right handed. We demonstrate that the photocurrent stems from the sample edges, which reduce the spatial symmetry and result in an asymmetric scattering of carriers driven by the radiation electric field. The developed theory based on Boltzmann's kinetic equation is in a good agreement with the experiment. We show that the edge photocurrents can be applied for determination of the conductivity type and the momentum scattering time of the charge carriers in the graphene edge vicinity.
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| 7. |
- Toropov, A.A., et al.
(författare)
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III-V/II-VI heterovalent double quantum wells
- 2006
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Ingår i: Physica status solidi. B, Basic research. - : Wiley. - 0370-1972 .- 1521-3951. ; 243:4, s. 819-826
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Tidskriftsartikel (refereegranskat)abstract
- We report on design, fabrication by molecular beam epitaxy, and photoluminescence (PL) studies of III-V/II-VI heterovalent structures containing a GaAs/AlGaAs/ZnSe/ZnCdMnSe double quantum well (QW). The studies of temperature-dependent and time-resolved PL have provided an insight into the nature of the exciton localization potential induced by the heterovalent interface. It is found that under the resonant conditions the observed emission mostly originates from the recombination of excitons confined in type II quantum-dot-like structures, where the holes are localised within the GaAs QW due to the well width fluctuations and the electrons are localized in the plane of the ZnCdMnSe QW due to the fluctuations of the conduction band offset at the heterovalent interface, induced by random variation of the interface microscopic structure. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA,.
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