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- Lundskog, Anders
(författare)
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Controlled growth of hexagonal GaN pyramids and InGaN QDs
- 2012
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Gallium-nitride (GaN) and its related alloys are direct band gap semiconductors, with a wide variety of applications. The white light emitting diode (LED) is of particular importance as it is expected to replace energy inefficient light bulb and hazardous incandescent lamps used today. However, today’s planar hetero epitaxial grown LEDs structures contain an unavoidable number of dislocations, which serves as non-radiative recombination centers. The dislocations harm the luminous efficiency of the LEDs and generate additional heat. Pseudomorphically grown quantum dots (QDs) are expected to be dislocation free thus the injected carriers captured by the QDs essentially recombine radiatively since the dislocations remain outside the QD. Furthermore the continuous character of the density of states in bulk materials is redistributed when the size of the dot is reduced within the Bohr radius of the material. Fully discret energy levels are eventually reached, which offers additional control of the optical properties. The Coulomb interaction between the confined carriers also has influence on the emission energy of the recombining carriers, which opens up the possibility of manufacturing novel light sources such as the single photon emitter. Single photon emitters are essential building blocks for quantum cryptography and teleportation applications.The main contribution of the present work is the investigation of growth and characterization of sitecontrolled indium-gallium-nitride QDs embedded in GaN matrixes. The goal has been to demonstrate the ability to grow site-controlled InGaN QDs at the apex of hexagonal GaN pyramids in a controlled way using hot-wall metal organic chemical vapor deposition (MOCVD). Strong emphasis was set on the controlled growth of InGaN QDs. For example the growth of a single InGaN QD located at the apex of hexagonal GaN pyramids with tunable emission energy, the QD emission energy impact on the mask design, and a novel approach for the growth of InGaN QDs with polarization deterministic photon vectors were reported. The thesis is mainly based on experimental investigations by secondary electron microscope (SEM), micro photo-luminescence (μPL), and scanning transition electron microscopy ((S)TEM) characterization techniques.In Paper 1 and 2, we present the growth of symmetric GaN hexagonal pyramids which served as template for the InGaN QDs grown. In paper 1, it was concluded that the selective area growth (SAG) of hexagonal GaN pyramids by MOCVD through symmetric openings in a SIN mask roughly can be divided in two regimes where either the pyramid expands laterally or not. When the pyramid expanded laterally the resulting pyramid apex became (0001) truncated even after prolonged growth times. Lateral expansion also had major impact on the pyramid-to-pyramid uniformity. In paper 2, the MOCVD process parameter impact on the pyramid morphology was investigated. By tuning the growth temperature, the ammonia, and TMGa-flows a self limited pyramid structure with only {1101} facets visible was achieved. The presence of the {1101}, {1102}, and {1100} facets were discussed from surface stabilities under various growth conditions.Paper 3 and 4 concern the growth of InGaN QDs located at the apex of hexagonal GaN pyramids. In paper 3, we showed that it is possible to grow single QDs at the apex of hexagonal pyramids with emission line widths in the Ångström range. The QD emission energy was demonstrated to be tunable by the growth temperature. Basic spectroscopy data is also presented on a single QD in paper 3. In paper 4, the growth mechanisms of the QDs presented in paper 3 are presented. We concluded that (0001) truncated GaN pyramid base initiated the growth of InGaN QDs which gave rise to narrow luminescence peaks in the μPL spectra.In paper 5, the QD emission energy impact of the mask design was investigated. To our big surprise the QD emission energy increased with increasing pyramid pitch while the emission energy of the InGaN quantum wells located on the {1101} facets of the pyramids energetically shifted towards lower energies. The energy shift at the apex was found to be associated with the (0001) truncation diameter of the underlying GaN pyramid since no energy shift was observed for (0001) truncated pyramids with truncation diameters larger than 100 nm.In paper 6, the symmetry of the GaN pyramids were intentionally broken through the introduction of elongated openings in the SiN mask (symmetric openings was used in the previous five papers). The emission polarization vectors of the subsequently grown InGaN QDs were deterministically linked to the in-plane orientation of the pyramid it was nucleated upon, implying that the QDs inhibit an inplane anisotropy directly inherited from the pyramid template.Finally, paper 7 describes a hot-wall MOCVD reactor improvement by inserting insulating pyrolytic boron-nitride (PBN) stripes in the growth chamber. By doing this, we have completely eliminated the arcing problem between different susceptor parts. As a consequence, the reactor gained run-to-run reproducibility. Growth of state of the art advanced aluminum-gallium-nitride high electron mobility transistor structures on a 100 mm wafer with electron mobility above 2000 Vs/cm2 was demonstrated by the improved process.
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| 2. |
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| 3. |
- Aavikko, R., et al.
(författare)
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Clustering of vacancy defects in high-purity semi-insulating SiC
- 2007
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 75:8, s. 085208-
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Tidskriftsartikel (refereegranskat)abstract
- Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of four to five missing atoms and (ii) Si-vacancy-related negatively charged defects. The total open volume bound to the clusters anticorrelates with the electrical resistivity in both as-grown and annealed materials. Our results suggest that Si-vacancy-related complexes electrically compensate the as-grown material, but migrate to increase the size of the clusters during annealing, leading to loss of resistivity. © 2007 The American Physical Society.
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| 4. |
- Aavikko, R, et al.
(författare)
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Observation of vacancy clusters in HTCVD grown SiC
- 2005
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Ingår i: Materials Science Forum, Vols. 483-485. ; , s. 469-472
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Konferensbidrag (refereegranskat)abstract
- Positron lifetime spectroscopy was used to study defects in semi-insulating (SI) silicon carbide (SiC) substrates grown by high-temperature chemical vapor deposition (HTCVD). The measured positron lifetime spectra can be decomposed into two components, of which the longer corresponds to vacancy clusters. We have carried out atomic superposition calculations to estimate the size of these clusters.
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| 5. |
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| 6. |
- Andersson, Christer M, et al.
(författare)
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A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications
- 2011
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Ingår i: IEEE ELECTRON DEVICE LETTERS. - : IEEE Institute of Electrical and Electronics. - 0741-3106. ; 32:6, s. 788-790
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Tidskriftsartikel (refereegranskat)abstract
- SiC Schottky diode varactors have been fabricated for use in microwave power applications, specifically the dynamic load modulation of power amplifiers. A custom doping profile has been employed to spread the C(V) over a large bias voltage range, thereby increasing the effective tuning range under large voltage swing conditions. The small-signal tuning range is approximately six, and punch through is reached at a bias voltage of -60 V, while the breakdown voltage is on the order of -160 V. An interdigitated layout is utilized together with a self-aligned Schottky anode etch process to improve the Q-factor at 2 GHz, which is 20 at zero bias and approximately 160 at punch through.
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| 7. |
- Aradi, B., et al.
(författare)
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Ab initio density-functional supercell calculations of hydrogen defects in cubic SiC
- 2001
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 63:245202
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Tidskriftsartikel (refereegranskat)abstract
- Based on ab initio density-functional calculations in supercells of 3C-SiC, the stable configurations of hydrogen and dihydrogen defects have been established. The calculated formation energies are used to give semiquantitative estimates for the concentration of hydrogen in SiC after chemical vapor deposition, low temperature H-plasma anneal, or heat treatment in high temperature hydrogen gas. Vibration frequencies, spin distributions, and occupation levels were also calculated in order to facilitate spectroscopic identification of these defects. (V+nH) complexes are suggested as the origin of some of the signals assigned earlier to pure vacancies. Qualitative extrapolation of our results to hexagonal polytypes explains observed electrical passivation effects of hydrogen.
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| 8. |
- Aradi, B., et al.
(författare)
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Impurity-controlled dopant activation : Hydrogen-determined site selection of boron in silicon carbide
- 2001
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 79:17, s. 2746-2748
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Tidskriftsartikel (refereegranskat)abstract
- The geometry and formation energy of substitutional B and Al dopants as well as their complexes with hydrogen have been calculated in 4H-SiC using first-principles methods. Our results show that boron selecting the silicon site and, therefore, getting activated as a shallow acceptor depends on the presence of hydrogen which is promoted into the crystal by boron itself. Without hydrogen, boron would mostly be incorporated at the carbon site. Aluminum does not show this behavior: it always selects the silicon site and is incorporated independently of hydrogen. © 2001 American Institute of Physics.
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| 9. |
- Aradi, B, et al.
(författare)
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Impurity-controlled dopant activation - The role of hydrogen in p-type doping of SiC
- 2002
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Ingår i: Materials Science Forum, Vols. 389-393. ; , s. 561-564
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Konferensbidrag (refereegranskat)abstract
- Hydrogen is a natural contaminant of SiC growth processes, and may influence the doping efficiency. Hydrogen incorporation proportional to that of boron was observed during CVD growth while the amount of hydrogen was two orders of magnitude less than the aluminum concentration. Passivation by complex formation with hydrogen has been proven both for Al and B. The experimentally observed reactivation energy of these complexes differ by 0.9 eV. Our ab initio supercell calculations in 4H-SiC indicate, that in the absence of hydrogen, boron is incorporated as isolated substitutional and prefers the carbon site, while under typical CVD conditions boron is incorporated together with hydrogen (in equal amounts), favoring the silicon site. Therefore, the presence of H is advantageous for the activation of B as a shallow acceptor. In contrast to boron, aluminum is incorporated independently of the presence of hydrogen as isolated substitutional at the silicon site. The calculated difference between the dissociation of the stable dopant plus hydrogen complexes agrees very well with experiments. Vibration frequencies for the dopant complexes have been also calculated.
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| 10. |
- Aradi, B., et al.
(författare)
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Passivation of p-type dopants in 4H-SiC by hydrogen
- 2001
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Ingår i: Physica B, Vols. 308-310. ; , s. 722-725
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Konferensbidrag (refereegranskat)abstract
- Experimental investigations showed passivation of the p-type dopants B and Al in 4H-SiC by the formation of B+H and Al+H complexes. The dissociation energies of these complexes differed by 0.9 eV. Ab initio supercell calculations have been performed to investigate the interaction of H with B and Al in hexagonal 4H-SiC. The total energy, geometry and electronic structure of the possible complexes have been determined. Site dependencies have also been investigated. The most stable configurations were found with H at a bond center site next to B at the Si site, and with H at the antibonding site of a carbon atom which is first neighbor to Al at a Si site. Both the BSi+HBC and the AlSi+HAB(C) complexes turned out to be electrically inactive. The different structure of the passivated complexes explains the observed difference in their dissociation energy: the calculated difference of the binding energies of these complexes is 0.9 eV, which agrees well with the experimental finding. © 2001 Elsevier Science B.V. All rights reserved.
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