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| 3. |
- Bengtsson, Stefan, 1961, et al.
(författare)
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Oxide degradation of wafer bonded MOS capacitors following Fowler-Nordheim electron injection
- 1992
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Ingår i: Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications. ; , s. 339-
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Konferensbidrag (refereegranskat)abstract
- The degradation of wafer bonded silicon dioxides as a result of Fowler-Nordheim electron injection has been studied. The samples were MOS capacitors with wafer bonded SiO2-SiO2 interfaces at the oxide center. The charge trapping in the oxide and the Si-SiO2 interface state generation were monitored as a function of injected charge and compared to reference MOS capacitors without bonded interfaces. A larger change in the oxide charge was found in the bonded capacitors as compared to the reference structures. The centroid of trapped negative oxide charge was found to be located close to the SiO2-SiO2 interface in the bonded structures, while the reference structures exhibited centroids close to the injecting contact. The electron injection caused approximately the same generation of interface states in both groups of capacitors
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| 6. |
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| 7. |
- Jauhiainen, Anders, 1964, et al.
(författare)
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Charge trapping in wafer bonded structures
- 1992
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Ingår i: Proc of the 2nd European Solid State Device Research Conference. ESSDERC. ; , s. 597-
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Tidskriftsartikel (refereegranskat)
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| 8. |
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| 9. |
- Jauhiainen, Anders, 1964
(författare)
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Electrical Characterization of Novel Insulators in Metal-Insulator-Semiconductor Structures
- 1997
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- This thesis comprises seven papers (A-G) and an extended introduction which puts them into context within a broader field of research. The papers deal with the electrical characterization of some different insulators and interfaces encountered within the realm of silicon based microelectronics. Papers A and B concern the electrical properties of silicon dioxide layers formed by wafer bonding. It is found that pronounced charging occurs at the bonded interface during high field (Fowler-Nordheim) injection into the bonded oxide. The effect can be minimized by properly annealing the structure. Paper C deals with stress relaxation in ultra thin oxides on silicon after they have been subjected to electrical stress. The observed behavior is found to contradict the commonly adopted model for describing such phenomena. Paper D deals with the electrical properties of wafer bonded hydrophobic silicon surfaces. It is demonstrated that such bonded interfaces can be prepared with a very small energy barrier at the interface. Finally, papers E-G concern the electrical properties of undoped polycrystalline diamond films on silicon. Charge transport in such films is commonly attributed to Poole-Frenkel conduction. It is found that this model cannot explain the behavior unless the defects involved in the transport are assumed to be randomly distributed in the film and/or spread out in energy. Further, the capacitance-voltage characteristics of metal-polycrystalline diamond-silicon structures are strongly influenced by slow interface traps at the diamond-silicon interface. These traps are not in thermal equilibrium during the measurements. A new non-equilibrium model is presented and compared to the experimental results. It is found that the model agrees well with the measured data.
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| 10. |
- Jauhiainen, Anders, 1964, et al.
(författare)
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Electrical properties of undoped polycrystalline diamond thin films on silicon
- 1996
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Ingår i: Diamond for Electronic Applications. Symposium. ; , s. 331-
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Konferensbidrag (refereegranskat)abstract
- We have investigated the electrical properties of undoped polycrystalline diamond thin films deposited on (100)-oriented n-type and p-type silicon substrates. The films, intended for electronic applications, were manufactured using hot filament chemical vapour deposition (HFCVD). To a large extent the capacitance-voltage characteristics are influenced by traps located close to the interface between the diamond layer and the silicon substrate. These traps play an important role for voltage sharing between the diamond layer and the silicon space charge region. The DC current density through the diamond film has the same functional dependence on the electric field for films deposited on both n- and p-Si. The field dependency agrees with a Frenkel-Poole transport model. Further, although the DC current transport is thermally activated, it does not follow an Arrhenius relation. A possible reason is that traps within a broad range of energy levels are involved in the charge transport. Finally, current transients resulting from stepwise changes in the applied voltage follow a power law time dependence where the kinetics depend only weakly on temperature
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