| 1. |
- Edoff, Marika, 1965-, et al.
(författare)
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Ultrathin CIGS Solar Cells with Passivated and Highly Reflective Back Contacts – : Results from the ARCIGS-M Consortium
- 2019
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Ingår i: Proceedings of 36th European Photovoltaic Solar Energy Conference and Exhibition. ; , s. 597-600
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- In this work, we report results from the EU-funded project ARCIGS-M. The project started in 2016 and aims to reduce the use of indium and gallium by enabling the use of very thin Cu(In,Ga)Se2 (CIGS) layers while retaining high efficiency and developing innovative low-cost steel substrates as alternatives to glass. In the project, reflective layers containing TCO´s and silver have successfully been used to enhance the reflective properties of the rear contact. In addition, passivation layers based on alumina (Al2O3) deposited by atomic layer deposition (ALD) have been found to yield good passivation of the rear contact. Since the alumina layers are dielectric, perforation of these layers is necessary to provide adequate contacting. The design of the perforation patterns has been investigated by a combination of modeling and experimental verification by electron beam lithography. In parallel a nano-imprint lithography (NIL) process is further developed for scale-up and application in prototype modules. Advanced optoelectrical characterization supported by modeling is used to fill in the missing gaps in optical and electrical properties, regarding CIGS, interfaces and back contact materials.
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| 2. |
- Gouillart, Louis, et al.
(författare)
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Interface engineering of ultrathin Cu(In,Ga)Se2 solar cells on reflective back contacts
- 2021
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Ingår i: Progress in Photovoltaics. - : John Wiley & Sons. - 1062-7995 .- 1099-159X. ; 29:2, s. 212-221
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Tidskriftsartikel (refereegranskat)abstract
- Cu(In,Ga)Se-2-based (CIGS) solar cells with ultrathin (<= 500 nm) absorber layers suffer from the low reflectivity of conventional Mo back contacts. Here, we design and investigate ohmic and reflective back contacts (RBC) made of multilayer stacks that are compatible with the direct deposition of CIGS at 500 degrees C and above. Diffusion mechanisms and reactions at each interface and in the CIGS layer are carefully analyzed by energy dispersive X-ray (EDX)/scanning transmission electron microscopy (STEM). It shows that the highly reflective silver mirror is efficiently encapsulated in ZnO:Al layers. The detrimental reaction between CIGS and the top In2O3:Sn (ITO) layer used for ohmic contact can be mitigated by adding a 3 nm thick Al2O3 layer and by decreasing the CIGS coevaporation temperature from 550 degrees C to 500 degrees C. It also improves the compositional grading of Ga toward the CIGS back interface, leading to increased open- circuit voltage and fill factor. The best ultrathin CIGS solar cell on RBC exhibits an efficiency of 13.5% (+1.0% as compared to our Mo reference) with a short-circuit current density of 28.9 mA/cm(2) (+2.6 mA/cm(2)) enabled by double-pass absorption in the 510 nm thick CIGS absorber. RBC are easy to fabricate and could benefit other photovoltaic devices that require highly reflective and conductive contacts subject to high temperature processes.
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| 3. |
- Gouillart, Louis, et al.
(författare)
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Reflective Back Contacts for Ultrathin Cu(In,Ga)Se2-Based Solar Cells
- 2020
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Ingår i: IEEE Journal of Photovoltaics. - 2156-3381 .- 2156-3403. ; 10:1, s. 250-254
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Tidskriftsartikel (refereegranskat)abstract
- We report on the development of highly reflective back contacts (RBCs) made of multilayer stacks for ultrathin CIGS solar cells. Two architectures are compared: they are made of a silver mirror coated either with a single layer of In 2 O 3 :Sn (ITO) or with a bilayer of ZnO:Al/ITO. Due to the improvement of CIGS rear reflectance, both back contacts result in a significant external quantum efficiency enhancement, in agreement with optical simulations. However, solar cells fabricated with Ag/ITO back contacts exhibit a strong shunting behavior. The key role of the ZnO:Al layer to control the morphology of the top ITO layer and to avoid silver diffusion through the back contact is highlighted. For a 500-nm-thick CIGS layer, this optimized RBC leads to a best cell with a short-circuit current of 27.8 mA/cm 2 (+2.2 mA/cm 2 as compared to a Mo back contact) and a 12.2%-efficiency (+2.5% absolute).
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| 4. |
- Gouillart, Louis, et al.
(författare)
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Ultrathin Cu(In,Ga)Se2 solar cells with Ag-based reflective back contacts
- 2020
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Ingår i: 2020 47th IEEE Photovoltaic Specialists Conference (PVSC). - 9781728161150 - 9781728161167 ; , s. 1481-1484
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Konferensbidrag (refereegranskat)abstract
- We developed a highly reflective back contact for Cu(In,Ga)Se 2 solar cells based on silver encapsulated in a TCOs stack, compatible with substrate configuration. We demonstrated ultrathin (500 nm) Cu(In,Ga)Se 2 solar cells with 13.5% efficiency and state-of-the-art JSC=28.9 mA/cm2,2.7 mA/cm 2 more than the reference cell on molybdenum. We also demonstrated a 530 nm-thick (Ag, Cu)(In,Ga)Se 2 solar cell on Mo with state-of-the-art efficiency (14.9%) and remarkably high V OC (741 mV) and FF (81.8%). This result coupled with a highly reflective back contact for improved J SC , has the potential for a 500 nm-thick (Ag, Cu)(In,Ga)Se 2 solar cell with an 18% efficiency.
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