SwePub - sökning: WFRF:(Käckell P.)

Numrering	Referens	Omslagsbild	Hitta
1.	Bertilsson, Kent, et al. (författare) The Effect of Different Transport Models in Simulation of High Frequency 4H-SiC and 6H-SiC Vertical MESFETs 2001 Ingår i: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 45:5, s. 645-653 Tidskriftsartikel (refereegranskat)abstract A full band Monte Carlo (MC) study of the high frequency performance of a 4H-SiC Short channel vertical MESFET is presented. The MC model used is based on data from a full potential band structure calculation using the local density approximation to the density functional theory. The MC results have been compared with simulations using state of the art drift-diffusion and hydrodynamic transport models. Transport parameters such as mobility, saturation velocity and energy relaxation time are extracted from MC simulations
2.	Hjelm, Mats, et al. (författare) A study of the anisotropic transport in 4H and 6H silicon carbide by Monte Carlo simulation 1999 Ingår i: Physica scripta Topical issues. - 0281-1847. ; 79, s. 42-45 Tidskriftsartikel (refereegranskat)
3.	Hjelm, Mats, et al. (författare) Full band Monte Carlo simulation of short channel MOSFETs in 4H and 6H-SiC 1999 Ingår i: Proceedings of Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications. - Warrendale, Pa. : Materials Research Society. - 1558994793 ; , s. 559- Konferensbidrag (refereegranskat)

Skapa referenser, mejla, bekava och länka

Träfflista för sökning "WFRF:(Käckell P.) "