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- He, Z Q, et al.
(författare)
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As overlayer on GaAs(110) studied with photoemission
- 1995
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 52:23, s. 16602-16607
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Tidskriftsartikel (refereegranskat)abstract
- As-terminated GaAs(110) surfaces were prepared on ex situ cleaved substrates by molecular-beam epitaxy. The surface stoichiometry was controlled by postgrowth As deposition. Photoemission from a surface covered with a monolayer As was investigated in detail using synchrotron radiation. Two different surface components were found in core-level spectra, which are interpreted as due to adatoms bonding to the surface anions and cations. In the valence-band spectra several surface states were identified, in analogy with previous reports on the isoelectronic Sb/GaAs(110) system. The polarization dependence is not the same, however, which leads us to the conclusion that the adlayer bonding mechanisms are different in the two cases.
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