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| 2. |
- Jokubavicius, Valdas, et al.
(författare)
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Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates
- 2013
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Ingår i: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. ; 740-742, s. 19-22
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Tidskriftsartikel (refereegranskat)abstract
- Fluorescent silicon carbide was grown using the fast sublimation growth process on low off-axis 6H-SiC substrates. In this case, the morphology of the epilayer and the incorporation of dopants are influenced by the Si/C ratio. Differently converted tantalum foils were introduced into the growth cell in order to change vapor phase stochiometry during the growth. Fluorescent SiC grown using fresh and fully converted tantalum foils contained morphological instabilities leading to lower room temperature photoluminescence intensity while an improved morphology and optical stability was achieved with partly converted tantalum foil. This work reflects the importance of considering the use of Ta foil in sublimation epitaxy regarding the morphological and optical stability in fluorescent silicon carbide.
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| 3. |
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| 4. |
- Ou, Haiyan, et al.
(författare)
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Advances in wide bandgap SiC for optoelectronics
- 2014
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Ingår i: European Physical Journal B. - : Springer Science and Business Media LLC. - 1434-6028 .- 1434-6036. ; 87:3, s. 58-
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Tidskriftsartikel (refereegranskat)abstract
- Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication. This paper will review the advances in fluorescent SiC for white light-emitting diodes, covering the polycrystalline doped SiC source material growth, single crystalline epitaxy growth of fluorescent SiC, and nanofabrication of SiC to enhance the extraction efficiency for fluorescent SiC based white LEDs.
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| 5. |
- Ou, Yiyu, et al.
(författare)
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Broadband and omnidirectional light harvesting enhancement of fluorescent SiC
- 2012
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Ingår i: Optics Express. - : Optical Society of America. - 1094-4087. ; 20:7, s. 7575-7579
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Tidskriftsartikel (refereegranskat)abstract
- In the present work, antireflective sub-wavelength structures have been fabricated on fluorescent 6H-SiC to enhance the white light extraction efficiency by using the reactive-ion etching method. Broadband and omnidirectional antireflection characteristics show that 6H-SiC with antireflective sub-wavelength structures suppress the average surface reflection significantly from 20.5 % to 1.01 % over a wide spectral range of 390-784 nm. The luminescence intensity of the fluorescent 6H-SiC could be enhanced in the whole emission angle range. It maintains an enhancement larger than 91 % up to the incident angle of 70 degrees, while the largest enhancement of 115.4 % could be obtained at 16 degrees. The antireflective sub-wavelength structures on fluorescent 6H-SiC could also preserve the luminescence spectral profile at a large emission angle by eliminating the Fabry-Perot microcavity interference effect.
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| 6. |
- Wilhelm, Martin, et al.
(författare)
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Photoluminescence topography of fluorescent SiC and its corresponding source crystals
- 2013
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Ingår i: Silicon Carbide and Related Materials 2012. - : Trans Tech Publications Inc.. ; , s. 421-424
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Konferensbidrag (refereegranskat)abstract
- The preparation and application of co-doped polycrystalline SiC as source in sublimation growth of fluorescent layers is a complex topic. Photoluminescence topographies of luminescent 6H-SiC layers and their corresponding source crystals have been studied in order to investigate the dependence of the epitaxial growth on the source material. It is shown that the homogeneity concerning the dopant incorporation and the layer luminescence intensity does not depend on the characteristics of the PVT grown source material. Therefore co-doped polycrystalline SiC is a promising source material in fast sublimation growth of luminescent 6H-SiC.
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