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Sökning: WFRF:(Kalinina O)

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1.
  • Blank, T. V., et al. (författare)
  • Temperature dependence of the photoelectric conversion quantum efficiency of 4H-SiC Schottky UV photodetectors
  • 2005
  • Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 20:8, s. 710-715
  • Tidskriftsartikel (refereegranskat)abstract
    • Ultraviolet Schottky photodetectors based on n-4H-SiC (N-d - N-a = 4 x 10(15) cm(-3)) epitaxial layers of high purity have been fabricated. Their spectral sensitivity range is 3.2-5.3 eV peaking at 4.9 eV (quantum efficiency is about similar to 0.3 electron/photon), which is close to the bactericidal ultraviolet radiation spectrum. The temperature dependence of the quantum efficiency of 4H-SiC Schottky structure has been investigated to determine the temperature stability and the mechanism of the photoelectric conversion process. At low temperatures (78-175 K) the quantum efficiency increases with increasing temperature for all photon energy values and then tends to saturate. We suppose that some imperfections in the space-charge region act as traps that capture both photoelectrons and photoholes. After some time the trapped electron-hole pairs recombine due to the tunnelling effect. At high temperatures (more than 300 K), the second enhancement region of the quantum efficiency is observed in the photon energy range of 3.2-4.5 eV. It is connected with a phonon contribution to indirect optical transitions between the valence band and the M-point of the conduction band. When the photon energy is close to a direct optical transition threshold this enhancement region disappears. This threshold is estimated to be 4.9 eV. At photon energies more than 5 eV a drastic fall of the quantum efficiency has been observed throughout the temperature interval. We propose that in this case the photoelectrons and photoholes are bound to form hot excitons in the space-charge region due to the Brillouin zone singularity, and do not contribute to the following photoelectroconversion process.
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2.
  • Blank, T. V., et al. (författare)
  • Temperature dependence of the quantum efficiency of 4H-SiC-Based Schottky photodiodes
  • 2001
  • Ingår i: Technical physics letters. - : Pleiades Publishing Ltd. - 1063-7850 .- 1090-6533. ; 27:9, s. 776-778
  • Tidskriftsartikel (refereegranskat)abstract
    • Using metal-semiconductor structures based on a pure epitaxial layer of n-4H-SiC (N-d - N-a = 4 x 10(15) cm(-3)), UV photodetectors were created with a maximum photosensitivity at 4.9 eV and a quantum efficiency up to 0.3 el/ph. The photosensitivity spectrum of the base structure is close to the spectrum of bactericidal action of the UV radiation. For photon energies in the 3.4 - 4.7 eV range, the quantum efficiency of the photoelectric conversion exhibits rapid growth with the temperature above 300 K, which is explained by the participation of photons in indirect interband transitions. This growth is not manifested when the photon energy is close to the threshold energy of direct optical transitions in the nondirect-bandgap semiconductor, which allows the threshold energy to be evaluated (similar to4.9 eV).
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3.
  • Crous, P. W., et al. (författare)
  • Fungal Planet description sheets: 1182-1283
  • 2021
  • Ingår i: Persoonia. - : Naturalis Biodiversity Center. - 0031-5850. ; 46, s. 313-528
  • Tidskriftsartikel (refereegranskat)abstract
    • Novel species of fungi described in this study include those from various countries as follows: Algeria, Phaeoacremonium adelophialidum from Vitis vinifera. Antarctica, Comoclathris antarctica from soil. Australia, Coniochaeta salicifolia as endophyte from healthy leaves of Geijera salicifolia, Eremothecium peggii in fruit of Citrus australis, Microdochium ratticaudae from stem of Sporobolus natalensis, Neocelosporium corymbiae on stems of Corymbia variegata, Phytophthora kelmanii from rhizosphere soil of Ptilotus pyramidatus, Pseudosydowia backhousiae on living leaves of Backhousia citriodora, Pseudosydowia indooroopillyensis, Pseudosydowia louisecottisiae and Pseudosydowia queenslandica on living leaves of Eucalyptus sp. Brazil, Absidia montepascoalis from soil. Chile, Ilyonectria zarorii from soil under Maytenus boaria. Costa Rica, Colletotrichum filicis from an unidentified fern. Croatia, Mollisia endogranulata on deteriorated hardwood. Czech Republic, Arcopilus navicularis from tea bag with fruit tea, Neosetophoma buxi as endophyte from Buxus sempervirens, Xerochrysium bohemicum on surface of biscuits with chocolate glaze and filled with jam. France, Entoloma cyaneobasale on basic to calcareous soil, Fusarium aconidiale from Triticum aestivum, Fusarium juglandicola from buds of Juglans regia. Germany, Tetraploa endophytica as endophyte from Microthlaspi perfoliatum roots. India, Castanediella ambae on leaves of Mangifera indica, Lactifluus kanadii on soil under Castanopsis sp., Penicillium uttarakhandense from soil. Italy, Penicillium ferraniaense from compost. Namibia, Bezerromyces gobabebensis on leaves of unidentified succulent, Cladosporium stipagrostidicola on leaves of Stipagrostis sp., Cymostachys euphorbiae on leaves of Euphorbia sp., Deniquelata hypolithi from hypolith under a rock, Hysterobrevium walvisbayicola on leaves of unidentified tree, Knufia hypolithi and Knufia walvisbayicola from hypolith under a rock, Lapidomyces stipagrostidicola on leaves of Stipagrostis sp., Nothophaeotheca mirabibensis (incl. Nothophaeotheca gen. nov.) on persistent inflorescence remains of Blepharis obmitrata, Paramyrothecium salvadorae on twigs of Salvadora persica, Preussia procaviicola on dung of Procavia sp., Sordaria equicola on zebra dung, Volutella salvadorae on stems of Salvadora persica. Netherlands, Entoloma ammophilum on sandy soil, Entoloma pseudocruentatum on nutrient poor (acid) soil, Entoloma pudens on plant debris, amongst grasses. New Zealand, Amorocoelophoma neoregeliae from leaf spots of Neoregelia sp., Aquilomyces metrosideri and Septoriella callistemonis from stem discolouration and leaf spots of Metrosideros sp., Cadophora neoregeliae from leaf spots of Neoregelia sp., Flexuomyces asteliae (incl. Flexuomyces gen. nov.) and Mollisia asteliae from leaf spots of Astelia chathamica, Ophioceras freycinetiae from leaf spots of Freycinetia banksii, Phaeosphaeria caricis-sectae from leaf spots of Carex secta. Norway, Cuphophyllus flavipesoides on soil in semi-natural grassland, Entoloma coracis on soil in calcareous Pinus and Tilia forests, Entoloma cyaneolilacinum on soil semi-natural grasslands, Inocybe norvegica on gravelly soil. Pakistan, Butyriboletus parachinarensis on soil in association with Quercus baloot. Poland, Hyalodendriella bialowiezensis on debris beneath fallen bark of Norway spruce Picea abies. Russia, Bolbitius sibiricus on. moss covered rotting trunk of Populus tremula, Crepidotus wasseri on debris of Populus tremula, Entoloma isborscanum on soil on calcareous grasslands, Entoloma subcoracis on soil in subalpine grasslands, Hydropus lecythiocystis on rotted wood of Betula pendula, Meruliopsis faginea on fallen dead branches of Fagus orientalis, Metschnikowia taurica from fruits of Ziziphus jujube, Suillus praetermissus on soil, Teunia lichenophila as endophyte from Cladonia rangiferina. Slovakia, Hygrocybe fulgens on mowed grassland, Pleuroflammula pannonica from corticated branches of Quercus sp. South Africa, Acrodontium burrowsianum on leaves of unidentified Poaceae, Castanediella senegaliae on dead pods of Senegalia ataxacantha, Cladophialophora behniae on leaves of Behnia sp., Colletotrichum cliviigenum on leaves of Clivia sp., Diatrype dalbergiae on bark of Dalbergia armata, Falcocladium heteropyxidicola on leaves of Heteropyxis canescens, Lapidomyces aloidendricola as epiphyte on brown stem of Aloidendron dichotomum, Lasionectria sansevieriae and Phaeosphaeriopsis sansevieriae on leaves of Sansevieria hyacinthoides, Lylea dalbergiae on Diatrype dalbergiae on bark of Dalbergia armata, Neochaetothyrina syzygii (incl. Neochaetothyrina gen. nov.) on leaves of Syzygium chordatum, Nothophaeomoniella ekebergiae (incl. Nothophaeomoniella gen. nov.) on leaves of Ekebergia pterophylla, Paracymostachys euphorbiae (incl. Paracymostachys gen. nov.) on leaf litter of Euphorbia ingens, Paramycosphaerella pterocarpi on leaves of Pterocarpus angolensis, Paramycosphaerella syzygii on leaf litter of Syzygium chordatum, Parateichospora phoenicicola (incl. Parateichospora gen. nov.) on leaves of Phoenix reclinata, Seiridium syzygii on twigs of Syzygium chordatum, Setophoma syzygii on leaves of Syzygium sp., Starmerella xylocopis from larval feed of an Afrotropical bee Xylocopa caffra, Teratosphaeria combreti on leaf litter of Combretum kraussii, Teratosphaericola leucadendri on leaves of Leucadendron sp., Toxicocladosporium pterocarpi on pods of Pterocarpus angolensis. Spain, Cortinarius bonachei with Quercus ilex in calcareus soils, Cortinarius brunneovolvatus under Quercus ilex subsp. ballota in calcareous soil, Extremopsis radicicola (incl. Extremopsis gen. nov.) from root-associated soil in a wet heathland, Russula quintanensis on acidic soils, Tubaria vulcanica on volcanic lapilii material, Tuber zambonelliae in calcareus soil. Sweden, Elaphomyces borealis on soil under Pinus sylvestris and Betula pubescens. Tanzania, Curvularia tanzanica on inflorescence of Cyperus aromaticus. Thailand, Simplicillium niveum on Ophiocordyceps camponoti-leonardi on underside of unidentified dicotyledonous leaf. USA, Calonectria californiensis on leaves of Umbellularia californica, Exophiala spartinae from surface sterilised roots of Spartina alterniflora, Neophaeococcomyces oklahomaensis from outside wall of alcohol distillery. Vietnam, Fistulinella aurantioflava on soil. Morphological and culture characteristics are supported by DNA barcodes.
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5.
  • Bruzzi, M, et al. (författare)
  • Radiation-hard semiconductor detectors for SuperLHC
  • 2005
  • Ingår i: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment. - : Elsevier BV. - 0167-5087 .- 0168-9002. ; 541:1-2, s. 189-201
  • Tidskriftsartikel (refereegranskat)abstract
    • An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 1035 cm-2 s-1 has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016cm-2. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Float Zone silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors. The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors will be reviewed and discussed in this work.
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6.
  • Ivanov, A M, et al. (författare)
  • High-resolution short range ion detectors based on 4H-SiC films
  • 2004
  • Ingår i: Technical physics letters. - : Pleiades Publishing Ltd. - 1063-7850 .- 1090-6533. ; 30:7, s. 575-577
  • Tidskriftsartikel (refereegranskat)abstract
    • The energy resolution of SiC detectors has been studied in application to the spectrometry of alpha particles with 5.1-5.5 MeV energies. The Schottky barrier structure of the detector was based on a CVD-grown epitaxial n-4H-SiC film with a thickness of 26 mum and an uncompensated donor concentration of (1-2) x 10(15) cm(-3). An energy resolution of 0.5% achieved for the first time with SiC detectors allows fine structure of the alpha particle spectrum to be revealed. The average energy of the electron-hole pair formation in 4H-SiC is estimated at 7.71 eV.
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7.
  • Joeres, R., et al. (författare)
  • GlyLES: Grammar-based Parsing of Glycans from IUPAC-condensed to SMILES
  • 2023
  • Ingår i: Journal of Cheminformatics. - : Springer Science and Business Media LLC. - 1758-2946. ; 15:1
  • Tidskriftsartikel (refereegranskat)abstract
    • Glycans are important polysaccharides on cellular surfaces that are bound to glycoproteins and glycolipids. These are one of the most common post-translational modifications of proteins in eukaryotic cells. They play important roles in protein folding, cell-cell interactions, and other extracellular processes. Changes in glycan structures may influence the course of different diseases, such as infections or cancer. Glycans are commonly represented using the IUPAC-condensed notation. IUPAC-condensed is a textual representation of glycans operating on the same topological level as the Symbol Nomenclature for Glycans (SNFG) that assigns colored, geometrical shapes to the main monomers. These symbols are then connected in tree-like structures, visualizing the glycan structure on a topological level. Yet for a representation on the atomic level, notations such as SMILES should be used. To our knowledge, there is no easy-to-use, general, open-source, and offline tool to convert the IUPAC-condensed notation to SMILES. Here, we present the open-access Python package GlyLES for the generalizable generation of SMILES representations out of IUPAC-condensed representations. GlyLES uses a grammar to read in the monomer tree from the IUPAC-condensed notation. From this tree, the tool can compute the atomic structures of each monomer based on their IUPAC-condensed descriptions. In the last step, it merges all monomers into the atomic structure of a glycan in the SMILES notation. GlyLES is the first package that allows conversion from the IUPAC-condensed notation of glycans to SMILES strings. This may have multiple applications, including straightforward visualization, substructure search, molecular modeling and docking, and a new featurization strategy for machine-learning algorithms. GlyLES is available at https://github. com/kalininalab/GlyLES.
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8.
  • Kalinina, E. V., et al. (författare)
  • Effect of irradiation with fast neutrons on electrical characteristics of devices based on CVD 4H-SiC epitaxial layers
  • 2003
  • Ingår i: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 37:10, s. 1229-1233
  • Tidskriftsartikel (refereegranskat)abstract
    • The effect of irradiation with 1-MeV neutrons on electrical properties of Al-based Schottky barriers and p(+)-n-n(+) diodes doped by ion-implantation with Al was studied; the devices were formed on the basis of high-resistivity, pure 4H-SiC epitaxial layers possessing n-type conductivity and grown by vapor-transport epitaxy. The use of such structures made it possible to study the radiation defects in the epitaxial layer at temperatures as high as 700 K. Rectifying properties of the diode structures were no longer observed after irradiation of the samples with neutrons with a dose of 6 x 10(14) cm(-2); this effect is caused by high (up to 50 GOmega) resistance of the layer damaged by neutron radiation. However, the diode characteristics of irradiated p(+)-n-n(+) structures were partially recovered after an annealing at 650 K.
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9.
  • Kalinina, E. V., et al. (författare)
  • Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions
  • 2004
  • Ingår i: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 38:10, s. 1187-1191
  • Tidskriftsartikel (refereegranskat)abstract
    • Photoluminescence and deep-level transient spectroscopy are used to study the effect of irradiation with fast neutrons and high-energy Kr (235 MeV) and Bi (710 MeV) ions on the optical and electrical properties of high-resistivity high-purity n-type 4H-SiC epitaxial layers grown by chemical vapor deposition. Electrical characteristics were studied using the barrier structures based on these epitaxial layers: Schottky barriers with Al and Cr contacts and p(+)-n-n(+) diodes fabricated by Al ion implantation. According to the experimental data obtained, neutrons and high-energy ions give rise to the same defect-related centers. The results show that, even for the extremely high ionization density (34 keV/nm) characteristic of Bi ions, the formation of the defect structure in SiC single crystals is governed by energy losses of particles due to elastic collisions.
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