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- Kallesoe, Christian, et al.
(författare)
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Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching
- 2010
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Ingår i: Journal of Vacuum Science and Technology B. - : American Vacuum Society. - 1520-8567. ; 28:1, s. 21-26
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial growth of heterostructure nanowires allows for the definition of narrow sections with specific semiconductor composition. The authors demonstrate how postgrowth engineering of III-V heterostructure nanowires using selective etching can form gaps, sharpening of tips, and thin sections simultaneously on multiple nanowires. They investigate the potential of combining nanostencil deposition of catalyst, epitaxial III-V heterostructure nanowire growth, and selective etching, as a road toward wafer scale integration and engineering of nanowires with existing silicon technology. Nanostencil lithography is used for deposition of catalyst particles on trench sidewalls and the lateral growth of III-V nanowires is achieved from such catalysts. The selectivity of a bromine-based etch on gallium arsenide segments in gallium phosphide nanowires is examined, using a hydrochloride etch to remove the III-V native oxides. Depending on the etching conditions, a variety of gap topologies and tiplike structures are observed, offering postgrowth engineering of material composition and morphology.
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| 2. |
- Kallesoe, Christian, et al.
(författare)
-
Selective etching of III-V nanowires for molecular junctions
- 2008
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 1873-5568 .- 0167-9317. ; 85:5-6, s. 1179-1181
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Tidskriftsartikel (refereegranskat)abstract
- Selective etching of heterostructure III-V nanowires can be used to form tips and narrow gaps simultaneously on multiple nanowires on a single wafer. In this study we tested bromine based etching of gallium arsenide segments in gallium phosphide nanowires. Depending on the etchant and etching conditions, a variety of gap topologies and tip-like structures were observed. The method is compatible with wafer-scale integration of molecular electronics within existing silicon technology, offering control of materials composition, morphology and electronic band gap of the electrodes that can be made so small they might be used as contact electrodes for individual molecules. (C) 2008 Elsevier B.V. All rights reserved.
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