| 1. |
- Isaksson, E, et al.
(författare)
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Ice cores from Svalbard :useful archives of past climate and pollution history.
- 2003
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Ingår i: Physics and chemistry of the earth. Part A. - : Elsevier BV. - 1464-1895 .- 1873-4642 .- 1474-7065. ; 28:28-32, s. 1217-1228
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Tidskriftsartikel (refereegranskat)abstract
- Ice cores from the relatively low-lying ice caps in Svalbard have not been widely exploited in climatic and environmental studies due to uncertainties about the effect of melt water percolation. However, results from two recent Svalbard ice cores, at Lomonosovfonna (1250 m asl) and Austfonna (750 m asl), have shown that with careful site selection, high-resolution sampling and multiple chemical analyses, it is possible to recover ice cores with partly preserved annual signals. These cores are estimated to cover at least the past 600 years and have been dated using a combination of known reference horizons and glacial modeling. The δ18O data from both Lomonosovfonna and Austfonna ice cores suggest that the 20th century was the warmest during the past 600 years. A comparison of the ice core and sea ice records from this period suggests that sea ice extent and Austfonna δ18O are linked over the past 400 years. This may reflect the position of the storm tracks and their direct influence on the relatively low altitude Austfonna. Lomonosovfonna may be less sensitive to such changes and primarily record atmospheric changes due to its higher elevation. The anthropogenic influence on Svalbard environment is illustrated by increased levels of non-sea-salt sulphate, nitrate, acidity, fly-ash and organic contaminants particularly during the second half of 1900s. Decreased concentrations of some components in recent decades most likely reflect emission and use restrictions. However, some current-use organic pesticide compounds show growing concentrations in near surface layers.
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| 2. |
- Jokubavicius, Valdas, et al.
(författare)
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Effects of source material on epitaxial growth of fluorescent SiC
- 2012
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Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 522, s. 7-10
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Tidskriftsartikel (refereegranskat)abstract
- The growth of fluorescent SiC using Fast Sublimation Growth Process was demonstrated using different types of SiC source materials. These were prepared by (i) high-temperature hot pressing, (ii) chemical vapor deposition and (iii) physical vapor transport. The optimized growth rates of 50 μm/h, 170 μm/h and 200 μm/h were achieved using the three types of sources, respectively. The best results in respect to growth rates are obtained using higher density sources. Fluorescent SiC layers with mirror-like morphology, very good crystal quality and yellowish or warm white light photoluminescence at room temperature were grown using all three types of the source materials.
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| 3. |
- Kamiyama, S., et al.
(författare)
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Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC
- 2006
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 99:9
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Tidskriftsartikel (refereegranskat)abstract
- High-efficiency visible light emission in N-and-B-doped 6H-SiC epilayers was observed in photoluminescence measurements at room temperature. The orange-yellow light emission due to the recombination of donor-acceptor pairs (DAPs) has a broad spectrum with a peak wavelength of 576 nm and a full width at half maximum of 110 nm at 250 K. The high B concentration of more than 1018 cm-3 improves the emission efficiency of the DAP recombination at a high temperature. Compared with the photoluminescence spectrum of GaN at 10 K, a high quantum efficiency of 95% was estimated for the highly B-doped sample. From time-resolved photoluminescence measurements, a DAP recombination time of 5.0 ms was obtained, which is in good agreement with the calculated value by the rate equation with the assumption of a 95% internal quantum efficiency. This is quite promising as a light-emitting medium by optical pumping, as well as monolithic light sources combined with nitride-based light-emitting diodes grown on the DA-doped SiC epilayer. © 2006 American Institute of Physics.
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| 4. |
- Monemar, Bo, 1942-, et al.
(författare)
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Dominant shallow acceptor related to oxygen and hydrogen in GaN
- 2006
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X. ; 376-377, s. 440-443
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Tidskriftsartikel (refereegranskat)abstract
- We present new photoluminescence (PL) data of deliberately O-doped and Mg-doped GaN layers grown by MOCVD. The combination of these data with positron annihilation spectroscopy (PAS) and SIMS results obtained on the same samples shows a clear correlation of the PL intensity of the acceptor related emissions at 3.466 and 3.27 eV (at 2 K) with O doping. The acceptor is stable upon annealing in N-2 in our highly resistive samples, while it is known be unstable in p-GaN. Our tentative conclusion is that this very commonly occurring acceptor is either a V-Ga-O-H complex or a second configuration of the Mg acceptor containing H.
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| 5. |
- Monemar, Bo, 1942-, et al.
(författare)
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Optical signatures of dopants in GaN
- 2006
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Ingår i: Materials Science in Semiconductor Processing. - : Elsevier BV. - 1369-8001 .- 1873-4081. ; 9:1-3, s. 168-174
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Tidskriftsartikel (refereegranskat)abstract
- The characteristic optical spectra for shallow donors and acceptors in GaN are discussed. The most accurate photoluminescence (PL) data are obtained from samples grown on freestanding GaN substrates, where strain shifts are absent and a low spectroscopic line width is obtained. Recent PL data for excitons bound to the O and Si donors are discussed in some detail, giving accurate values for the binding energies and excited bound donor states. The Mg-acceptor is the most important one for p-doping, but the related optical spectra are controversial. We show that there are two acceptors present in Mg-doped GaN, with two different acceptor bound exciton peaks, and also two corresponding lower energy donor-acceptor pair spectra. We give tentative evidence for their interpretation. © 2006 Elsevier Ltd. All rights reserved.
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| 6. |
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| 7. |
- Siefert, Andrew, et al.
(författare)
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A global meta-analysis of the relative extent of intraspecific trait variation in plant communities
- 2015
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Ingår i: Ecology Letters. - : Wiley. - 1461-023X .- 1461-0248. ; 18:12, s. 1406-1419
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Forskningsöversikt (refereegranskat)abstract
- Recent studies have shown that accounting for intraspecific trait variation (ITV) may better address major questions in community ecology. However, a general picture of the relative extent of ITV compared to interspecific trait variation in plant communities is still missing. Here, we conducted a meta-analysis of the relative extent of ITV within and among plant communities worldwide, using a data set encompassing 629 communities (plots) and 36 functional traits. Overall, ITV accounted for 25% of the total trait variation within communities and 32% of the total trait variation among communities on average. The relative extent of ITV tended to be greater for whole-plant (e.g. plant height) vs. organ-level traits and for leaf chemical (e.g. leaf N and P concentration) vs. leaf morphological (e.g. leaf area and thickness) traits. The relative amount of ITV decreased with increasing species richness and spatial extent, but did not vary with plant growth form or climate. These results highlight global patterns in the relative importance of ITV in plant communities, providing practical guidelines for when researchers should include ITV in trait-based community and ecosystem studies.
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| 8. |
- Sun, Jianwu, et al.
(författare)
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Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium
- 2012
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Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 522, s. 33-35
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Tidskriftsartikel (refereegranskat)abstract
- The high quantum efficiency of donor–acceptor-pair emission in N and B co-doped 6H–SiC opens the way for SiC to constitute as an efficient light-emitting medium for white light-emitting diodes. In this work, we evidence room temperature luminescence in N and B co-doped 6H–SiC fluorescent material grown by the Fast Sublimation Growth Process. Three series of samples, with eight different N and B doping levels, were investigated. In most samples, from photoluminescence measurements a strong N–B donor–acceptor-pair emission band was observed at room temperature, with intensity dependent on the nitrogen pressure in the growth chamber and boron doping level in the source. Low temperature photoluminescence spectra showed that N bound exciton peaks exhibited a continuous broadening with increasing N2 pressure during the growth, unambiguously indicating an opportunity to control the N doping in the epilayer by conveniently changing the N2 pressure. Finally, the crystal quality of the N and B doped 6H–SiC was evaluated by X-ray diffraction measurements. The ω rocking curves of (0006) Bragg diffractions from the samples grown with lower and higher N2 pressure show almost the same value of the full width at half maximum as that collected from the substrate. This suggests that the N and B doping, which is expected to give rise to an efficient donor–acceptor-pair emission at room temperature, does not degrade the crystal quality.
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| 9. |
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| 10. |
- Bergman, Peder, et al.
(författare)
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Photoluminescence and electroluminescence characterization of InxGa1-x/InyGa1-yN multiple quantum well light emitting diodes
- 2002
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Ingår i: Materials Science Forum, Vols. 389-393. ; , s. 1493-1496
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Konferensbidrag (refereegranskat)abstract
- We report on a study of radiative recombination in In0.11Ga0.89N/In.0.01Ga0.99N multiple quantum wells (MQWs). The QWs were nominally undoped, while the InGaN barriers were Si doped. The MQW part is situated in the depletion field of a pn-junction structure with electrical contacts, so that both photoluminescence (PL) and electroluminescence (EL) can be studied as a function of bias. The PL and EL spectra are distinctly different, in particular at low temperatures. The spectral properties and related differences in PL decay times reflect different recombination conditions in the MQW region for the individual QWs.
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