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- Rigopoulos, N., et al.
(författare)
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Optically detected extended X-ray absorption fine structure study of InGaN/GaN single quantum wells
- 2007
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Ingår i: AIP Conference Proceedings. - : AIP. - 0094-243X. - 9780735403970 ; 893, s. 1503-1504
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Konferensbidrag (refereegranskat)abstract
- We have investigated the local atomic environment of the Ga atoms in an InxGa1-xN single quantum well structure using Optically Detected Extended X-ray Absorption Fine Structure (OD-EXAFS). A comparison of the OD-EXAFS data with a theoretical model shows the technique to be site selective for this particular structure and reveals that the quantum well emission originates from regions with x=0.15.
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3. |
- Nilsson, Daniel, et al.
(författare)
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Highly Si-doped Al0.72Ga0.28N layers: n-type conductivity bound by the process temperature
- 2014
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Establishing n- and p- type conductivity via intentional doping in epitaxial layers is fundamental to any semiconductor material system and its relevant device applications. Process parameters such as temperature, precursor gas-flow-rates and pressure may all control intentional doping in metal-organic chemical vapour deposition (MOCVD) of semiconductor materials. The incorporation of impurities such as carbon and oxygen may also be affected by the same process parameters, and the concentration of these impurities has a direct impact on the electrical, optical and thermal properties of epitaxial layers, as has been observed in the MOCVD of technologically-important III-V semiconductor materials such as AlGaAs and GaN.
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4. |
- Zhang, Y., et al.
(författare)
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The effect of dislocations on the efficiency of InGaN/GaN solar cells
- 2013
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Ingår i: Solar Energy Materials and Solar Cells. - : Elsevier. - 0927-0248 .- 1879-3398. ; 117, s. 279-284
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Tidskriftsartikel (refereegranskat)abstract
- Two solar cells based on an InGaN/GaN p-i-n hetero-junction, but having different dislocation densities, were fabricated and characterized. The structures were grown on c-plane (0001) GaN-on-sapphire templates with different threading dislocation (TD) densities of 5 x 10(8) and 5 x 10(9) cm(-2). Structural characterization revealed the presence of V-defects in the InGaN epilayer. Since each V-defect was associated with a TD, the structural as well as the optical properties worsened with a higher TO density in the GaN/sapphire template. It was also found that additional dislocations were generated in the p-GaN layer over the V-defects in the InGaN layer. Because of its superior structural quality, the peak external quantum efficiency (EQE) of the low TO density sample was three times higher than that of the high TD density sample. (C) 2013 Elsevier B.V. All rights reserved.
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