| 1. |
- Wang, Z., et al.
(författare)
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Genome-wide association analyses of physical activity and sedentary behavior provide insights into underlying mechanisms and roles in disease prevention
- 2022
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Ingår i: Nature Genetics. - : Springer Science and Business Media LLC. - 1061-4036 .- 1546-1718. ; 54:9, s. 1332-1344
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Tidskriftsartikel (refereegranskat)abstract
- Although physical activity and sedentary behavior are moderately heritable, little is known about the mechanisms that influence these traits. Combining data for up to 703,901 individuals from 51 studies in a multi-ancestry meta-analysis of genome-wide association studies yields 99 loci that associate with self-reported moderate-to-vigorous intensity physical activity during leisure time (MVPA), leisure screen time (LST) and/or sedentary behavior at work. Loci associated with LST are enriched for genes whose expression in skeletal muscle is altered by resistance training. A missense variant in ACTN3 makes the alpha-actinin-3 filaments more flexible, resulting in lower maximal force in isolated type IIA muscle fibers, and possibly protection from exercise-induced muscle damage. Finally, Mendelian randomization analyses show that beneficial effects of lower LST and higher MVPA on several risk factors and diseases are mediated or confounded by body mass index (BMI). Our results provide insights into physical activity mechanisms and its role in disease prevention. Multi-ancestry meta-analyses of genome-wide association studies for self-reported physical activity during leisure time, leisure screen time, sedentary commuting and sedentary behavior at work identify 99 loci associated with at least one of these traits.
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| 2. |
- Abreu, P, et al.
(författare)
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b-tagging in DELPHI at LEP
- 2004
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Ingår i: European Physical Journal C. Particles and Fields. - : Springer Science and Business Media LLC. - 1434-6044. ; 32:2, s. 185-208
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Tidskriftsartikel (refereegranskat)abstract
- The standard method used for tagging b-hadrons in the DELPHI experiment at the CERN LEP Collider is discussed in detail. The main ingredient of b-tagging is the impact parameters of tracks, which relies mostly on the vertex detector. Additional information, such as the mass of particles associated to a secondary vertex, significantly improves the selection efficiency and the background suppression. The paper describes various discriminating variables used for the tagging and the procedure of their combination. In addition, applications of b-tagging to some physics analyses, which depend crucially on the performance and reliability of b-tagging, are described briefly.
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| 3. |
- Hakansson, M C, et al.
(författare)
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The electronic structure of In- and As-terminated InAs(001) surfaces
- 1997
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Ingår i: Surface Science. - 0039-6028 .- 1879-2758. ; 374:1-3, s. 73-79
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Tidskriftsartikel (refereegranskat)abstract
- The InAs(001) 2 x 4 and 4 x 2 surfaces have been investigated by angle-resolved photoemission. The X(3) and X(5) points were found to be located 6.0 and 2.7 eV below the valence band maximum, respectively, and the dispersion of bulk bands along the Gamma-X direction in the bulk Brillouin zone were well described by a theoretical calculation. From angle-resolved valence band spectra measured along the high symmetry directions [110] and [1(1) over bar0$], three surface induced stares were identified on both the InAs(001)4 x 2 and the InAs(001)2 x 4 surface. (C) 1997 Elsevier Science B.V.
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| 4. |
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| 5. |
- Andersson, C B M, et al.
(författare)
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Surface atomic structure of InAs((111)over-bar)2x2 and InSb((111)over-bar)2x2 studied by core level spectroscopy
- 1996
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 347:1-2, s. 199-206
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Tidskriftsartikel (refereegranskat)abstract
- Surface sensitive high resolution core level spectroscopy has been applied to the molecular beam epitaxy grown InAs((111) over bar)2 x 2 and InSb((111) over bar)2 x 2 surfaces. For both systems the In 4d core level consists of one dominating component while the Group V core levels are deconvoluted into four components. This analysis is consistent with a surface model where the topmost layer consists entirely of arsenic or antimony. In this model, Group V atoms form trimers bound to Group V atoms in the first double layer, leaving a single Group V rest atom per unit cell.
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| 6. |
- He, Z Q, et al.
(författare)
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As overlayer on GaAs(110) studied with photoemission
- 1995
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 52:23, s. 16602-16607
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Tidskriftsartikel (refereegranskat)abstract
- As-terminated GaAs(110) surfaces were prepared on ex situ cleaved substrates by molecular-beam epitaxy. The surface stoichiometry was controlled by postgrowth As deposition. Photoemission from a surface covered with a monolayer As was investigated in detail using synchrotron radiation. Two different surface components were found in core-level spectra, which are interpreted as due to adatoms bonding to the surface anions and cations. In the valence-band spectra several surface states were identified, in analogy with previous reports on the isoelectronic Sb/GaAs(110) system. The polarization dependence is not the same, however, which leads us to the conclusion that the adlayer bonding mechanisms are different in the two cases.
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| 7. |
- Olsson, L O, et al.
(författare)
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Core level and valence-band studies of the (111)2x2 surfaces of InSb and InAs
- 1996
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 53:8, s. 4734-4740
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Tidskriftsartikel (refereegranskat)abstract
- The valence and core electronic surface states on the (111)2X2 surfaces of InSb and InAs have been studied by angle-resolved photoelectron spectroscopy. Similarities in data show that the vacancy-buckling model, which is known to describe the InSb(111)2x2 surface, also applies to InAs(111)2X2. Three surface valence bands are identified and their dispersions are mapped along symmetry directions in the surface Brillouin zone. The In 4d core levels show one surface shifted component while no surface shifted components of the Sb 4d or As 3d core levels could be resolved.
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| 8. |
- Clark, DW, et al.
(författare)
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Associations of autozygosity with a broad range of human phenotypes
- 2019
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Ingår i: Nature communications. - : Springer Science and Business Media LLC. - 2041-1723. ; 10:1, s. 4957-
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Tidskriftsartikel (refereegranskat)abstract
- In many species, the offspring of related parents suffer reduced reproductive success, a phenomenon known as inbreeding depression. In humans, the importance of this effect has remained unclear, partly because reproduction between close relatives is both rare and frequently associated with confounding social factors. Here, using genomic inbreeding coefficients (FROH) for >1.4 million individuals, we show that FROH is significantly associated (p < 0.0005) with apparently deleterious changes in 32 out of 100 traits analysed. These changes are associated with runs of homozygosity (ROH), but not with common variant homozygosity, suggesting that genetic variants associated with inbreeding depression are predominantly rare. The effect on fertility is striking: FROH equivalent to the offspring of first cousins is associated with a 55% decrease [95% CI 44–66%] in the odds of having children. Finally, the effects of FROH are confirmed within full-sibling pairs, where the variation in FROH is independent of all environmental confounding.
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| 9. |
- Girard, R T, et al.
(författare)
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Electronic structure of ZnO(0001) studied by angle-resolved photoelectron spectroscopy
- 1997
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Ingår i: Surface Science. - 0039-6028 .- 1879-2758. ; 373:2-3, s. 409-417
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Tidskriftsartikel (refereegranskat)abstract
- The electronic structure of the ZnO(0001) surface was studied by angle-resolved photoelectron spectroscopy. The recorded normal emission spectra give information about the Valence band states as well as the Zn 3d states. The dispersions of the four valence bands observed in the (0001) direction were compared with theory and are in good agreement with recent calculations which consider the Zn 3d electrons as part of the valence band. The Zn 3d states are seen to separate into two groups of four and six bands, which show dispersion with k(perpendicular to). This is in agreement with theoretical results but the location of these states were not accurately predicted. The present photoemission results show that they lie around 10.5 eV below E(F). Two surface states were observed on the (0001) surface. One, at 7.5 eV binding energy, was predicted by theory and is interpreted as arising from the ''back-bondings'' of the Zn 4s-O 2p mixed bulk states. The other one at 4.5 eV below E(F), most likely Zn 4p-0 2p derived, was not predicted by theoretical calculations and this is discussed further in the text. (C) 1997 Elsevier Science B.V.
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| 10. |
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