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- Tumėnas, Saulius, et al.
(författare)
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Dielectric function and refractiveindex of GaBixAs1-x(x = 0.035, 0.052, 0.075)
- 2012
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Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - Weinheim : Wiley-VCH Verlagsgesellschaft. - 1610-1634 .- 1610-1642. ; 9:7, s. 1633-1635
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Tidskriftsartikel (refereegranskat)abstract
- MBE grown GaBiAs epitaxial layers with Bi content of3.5 %, 5.2 %, and 7.5 %, sandwiched between GaAs,have been investigated by spectroscopic ellipsometry inthe infrared and absorption threshold spectral regions.The real and imaginary parts of the dielectric function ofGaBiAs indicate bandgap Eg and spin-orbit splitting Δ0+values close to literature data. The refractive index ofGaBiAs in the IR region 0.2–0.8 eV exceeds that ofGaAs by ca. 0.8 %, 2.3 %, and 3.6 %, for Bi content3.5 %, 5.2 %, and 7.5 %, respectively.
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