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Sökning: WFRF:(Karsteen M.)

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1.
  • Peto, G, et al. (författare)
  • Formation of epitaxial CoSi2 films on Si and on Si/Si80Ge20 (100) by reactive deposition epitaxy
  • 2002
  • Ingår i: Applied Physics Letters. - : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 81:1, s. 37-39
  • Tidskriftsartikel (refereegranskat)abstract
    • CoxTi1-x layers were deposited on Si (100) and on Si/Si80Ge20 (100) capped with 30- or 40-nm-thick Si at 650 degreesC substrate temperature at 1x10(-6) Pa pressure. The Co-silicide films grown by reactive deposition epitaxy were characterized by Rutherford backscattering-channeling, x-ray difraction, by depth profile analysis of the components, and by sheet resistance measurements. The Ti content of the deposited Co layers was between 0.1 and 8 at. %. The epitaxy of the layers on Si and on Si/Si80Ge20 improved by increasing the Ti concentration. The minimum yield of the channeling and the full width at half maximum value of the rocking curve of CoSi2 decreased. The sheet resisitance of the formed layers was also minimal in these cases. The method applied is promising to form epitaxial CoSi2 layers on SixGe1-x substrates.
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2.
  • Vincent, Jonathan, et al. (författare)
  • Theory of a room-temperature silicon quantum dot transitor as a sensitive electrometer
  • 2004
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 95, s. 323-
  • Tidskriftsartikel (refereegranskat)abstract
    • We consider theoretically the use of a room-temperature silicon quantum dot based device for electrometer applications. The low power device includes two split gates that quantize the electronic energy levels in the emitter and collector regions. The base consists of a silicon quantum dot buried in silicon dioxide. The small size of the dot and quantization of the states in the leads combined to allow the device to operate at room temperature. The nonlinear current–voltage characteristics can be significantly altered by small changes to the potential of the split gates. Power dissipation in the device therefore changes with the split gate voltage, and this can be exploited in electrometer applications. A simple model of the power dissipated when the device is part of a microwave resonant inductor-resistor-capacitor tank circuit suggests that large changes in device power can be achieved by changing the gate voltage, thereby forming a measurable signal. We also demonstrate that the power dissipation in the device changes as the base width is varied, and that the current through the device increases exponentially with a decrease in base width.
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