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- Dancila, Dragos, et al.
(författare)
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Wide Band On-Chip Slot Antenna with Back-Side Etched Trench for W-band Sensing Applications
- 2013
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Ingår i: 2013 7th European Conference on Antennas and Propagation (EuCAP). - 9788890701832 ; , s. 1576-1579
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Konferensbidrag (refereegranskat)abstract
- This paper presents the design and characterization of a highly integrated, wideband on-chip radiometer, composed of a slot antenna, RF-MEMS Dicke Switch, LNA and a wideband power detector. The highly integrated single-chip RF front-end is dedicated for broadband sensing up to 110 GHz. Both antenna and radiometer are fabricated in a 0.25 mu m SiGe BiCMOS process. The antenna design takes benefit of the back-side etched trench, offered by the technology. This is used to reduce losses due to the presence of the low resistivity silicon substrate. Additionally, the trench is specially shaped, as to improve the wideband matching of the antenna. The on-chip slot antenna design covers a wide bandwidth (70-110 GHz) with 0 dBi gain and 64% efficiency, both simulated at 94 GHz. The measured bandwidth spans 85 to 105 GHz. The W-band SiGe detector circuit has close to 20 GHz of operational bandwidth (S-11 <=-10 dB at 75-92 GHz) and presents a responsivity of 3-5kV/W (NEP=10-16 pW/Hz(1/2)) at 83-94 GHz.
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- Malmqvist, R., et al.
(författare)
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Reconfigurable RF Circuits and RF-MEMS
- 2012
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Ingår i: Microwave and Millimeter Wave Circuits and Systems. - : John Wiley & Sons. - 9781119944942 ; , s. 325-356
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Bokkapitel (refereegranskat)abstract
- The twelfth chapter, Reconfigurable RF Circuits and RF-MEMS, was contributed by Robert Malmqvist from Swedish Defence Research Agency (FOI) and Uppsala University, Sweden, Aziz Ouacha from FOI, Sweden, Mehmet Kaynak from IHP GmbH, Frankfurt (Oder), Germany, Naveed Ahsan Linköping University, Sweden, and Joachim Oberhammer from KTH Royal Institute of Technology, Stockholm, Sweden. While most of today's RF circuits are designed for a specific (fixed) function and frequency range, a much higher degree of flexibility would be possible using highly reconfigurable circuit implementations and front-ends architectures. This chapter presents examples of reconfigurable RF circuits that have been realised using either fully transistor based solutions or by employing RF MicroElectroMechanical Systems (RF-MEMS). First a novel approach for implementing reconfigurable circuitry based on the concept of Programmable Microwave Function Arrays (PROMFA) is presented. Various reconfigurable circuit designs based on the emergence of high performance RF-MEMS switches being developed in GaAs, GaN and SiGe RFIC/MMIC process technologies are then reviewed. In the final section, an overview of state-of-the-art RF-MEMS based phase shifter designs intended for electronic beam-steering antennas and phased array systems is presented.
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- Reyaz, Shakila Bint, et al.
(författare)
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Millimeter-Wave RF-MEMS SPDT Switch Networks in a SiGe BiCMOS Process Technology
- 2012
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Ingår i: 2012 42nd European Microwave Conference (EuMC). - NEW YORK : IEEE. - 9782874870262 ; , s. 1071-1074, s. 691-694
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Konferensbidrag (refereegranskat)abstract
- This paper presents mm-wave capacitive RF-MEMS based Single-Pole-Double-Throw (SPDT) switches fabricated in a SiGe BiCMOS process technology. Three different SiGe RF-MEMS based SPDTs (targeting the 40-80 GHz range) present 3-4 dB of in-band losses and up to 20-25 dB of isolation, respectively. The measured in-band attenuation of the characterized SiGe MEMS SPDTs corresponds to a loss of 2-3 dB when close to 1 dB of combined losses within the RF pads has been removed. The experimental s-parameter data was obtained from RF-tests of more than 300 characterized SPDT switch networks indicating a high fabrication yield and process repeatability of the fabricated SiGe MEMS circuits. The validated SiGe MEMS switch circuits can enable single-chip reconfigurable ICs for wireless communication and sensing applications up to 100 GHz.
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