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- Cho, Choong-Rae, et al.
(författare)
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Preparation of Na0.5K0.5NbO3/La0.6Sr0.2Mn1.2O3/LaAlO3 Thin Film Structures by Pulsed Laser Deposition
- 1999
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Ingår i: Multicomponent oxide films for electronics. - Warrendale, Pa : Materials Research Society. - 1558994815 - 9781558994812 ; , s. 249-254
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Konferensbidrag (refereegranskat)abstract
- We report on ferroelectric/giant magnetoresistive Nao.sKo.sNbCVLao.oSrojMniO} (NKN/LSMO) heterostructures gro\vn onto LaAlOj (001) single crystal using KrF pulsed laser ablation of stoichiometric ceramic target. Main processing parameters have been optimized to obtain smooth LSMO template layer, avoid NKN-LSMO interdiffusion, preserve NKN stoichiometry against the lost of volatile potassium and sodium and achieve reasonable reliability of NKN film performance. X-ray diffraction 0- 20 scans and rocking curves evidence for single-phase content and high c-axis orientation both in template LSMO and top NKN layers. Ferroelectric measurements yield remnant polarization P, of 1.5 (.iC/cm2 and spontaneous polarization Ps of 7 jiC/cm2 at electric field strength of 130 kV/cm. At room temperature, dielectric permittivity e' and dissipation factor tancJhave been found to vary from 595 to 555 and 0.046 to 0.029 respectively in the frequency range of 0.4 to 20 kHz. At 10 kHz dielectric permittivity linearly increases from 410 to 650 in the temperature range 77 K to 415 K while the dissipation factor below 320 K does not exceed 3%.
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| 2. |
- Grishin, A. M., et al.
(författare)
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Ultra-hard AlMgB14 Coatings Fabricated by RF Magnetron Sputtering from a Stoichiometric Target
- 2015
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Ingår i: JETP Letters. - 0021-3640 .- 1090-6487. ; 100:10, s. 680-687
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Tidskriftsartikel (refereegranskat)abstract
- For the first time hard aluminum magnesium boride films were fabricated by RF magnetron sputtering from a single stoichiometric ceramic AlMgB14 target. Optimized processing conditions (substrate temperature, target sputtering power and target-to-substrate distance) enable fabrication of stoichiometric in-depth compositionally homogeneous films with the peak values of nanohardness 88 GPa and Young's modulus 517 GPa at the penetration depth of 26 nm and, respectively, 35 and 275 GPa at 200 nm depth in 2 mu m thick film.
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| 4. |
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| 5. |
- Koo, S. -M, et al.
(författare)
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Towards ferroelectric field effect transistors in 4H-silicon carbide
- 2002
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Ingår i: Materials Research Society Symposium - Proceedings. - Boston, MA. ; , s. 371-379
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Konferensbidrag (refereegranskat)abstract
- We report on the integration of ferroelectric Pb(Zr,Ti)O3 (PZT) thin films on 4H-silicon carbide and their electrical properties. The structures of metal-ferroelectric-(insulator)-semiconductor MF(I)S and metal-ferroelectric-metal-insulator-semiconductor MFMIS have been fabricated and characterized. The MFMIS structures of Au/PZT/Pt/Ti/SiO2/SiC have shown fully saturated P-E hysteresis loops with remnant polarization Pr = 14.2 ΌC/cm2 and coercive field Ec = 58.9 kV/cm. The MFIS structures exhibited stable capacitance-voltage C-V loops with low conductance (<0.1 mS/cm2, tan Ύ ∌ 0.0007 at 12 V, 400 kHz) and memory window as wide as 10 V, when a 5 nm-thick Al2O3 was used as a high bandgap (Eg ∌ 9 eV) barrier buffer layer between PZT (Eg ∌ 3.5 eV) and SiC (Eg ∌ 3.2 eV). Both structures on n- and p- SiC have shown electrical properties promising for the application to the gate stacks for the SiC field-effect transistors (FETs) and the design and process issues on different types of the metal-ferroelectric-silicon carbide field-effect transistors (FETs) have also been proposed.
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