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Sökning: WFRF:(Khazmi Y O)

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1.
  • He, Z Q, et al. (författare)
  • As overlayer on GaAs(110) studied with photoemission
  • 1995
  • Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 52:23, s. 16602-16607
  • Tidskriftsartikel (refereegranskat)abstract
    • As-terminated GaAs(110) surfaces were prepared on ex situ cleaved substrates by molecular-beam epitaxy. The surface stoichiometry was controlled by postgrowth As deposition. Photoemission from a surface covered with a monolayer As was investigated in detail using synchrotron radiation. Two different surface components were found in core-level spectra, which are interpreted as due to adatoms bonding to the surface anions and cations. In the valence-band spectra several surface states were identified, in analogy with previous reports on the isoelectronic Sb/GaAs(110) system. The polarization dependence is not the same, however, which leads us to the conclusion that the adlayer bonding mechanisms are different in the two cases.
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2.
  • HAKANSSON, MC, et al. (författare)
  • DIMER FORMATION AND ELECTRONIC-STRUCTURE ON THE GE(100)(2X1)-SB SURFACE
  • 1992
  • Ingår i: Surface Science. - 0039-6028 .- 1879-2758. ; 278:1-2, s. L131-L134
  • Tidskriftsartikel (refereegranskat)abstract
    • Deposition of antimony on Ge(100)2 X 1 results in a well-ordered, highly passivated surface. From a comparison between core-level data and angle-resolved photoemission data, we conclude that the observed 2 x 1 reconstruction is caused by the formation of symmetric Sb-Sb dimers on the Ge surface.
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