| 1. |
- Bing, Zhao, 1990, et al.
(författare)
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Unconventional Charge–Spin Conversion in Weyl-Semimetal WTe2
- 2020
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Ingår i: Advanced Materials. - : Wiley. - 0935-9648 .- 1521-4095. ; 32:38
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Tidskriftsartikel (refereegranskat)abstract
- An outstanding feature of topological quantum materials is their novel spin topology in the electronic band structures with an expected large charge-to-spin conversion efficiency. Here, a charge-current-induced spin polarization in the type-II Weyl semimetal candidate WTe2 and efficient spin injection and detection in a graphene channel up to room temperature are reported. Contrary to the conventional spin Hall and Rashba–Edelstein effects, the measurements indicate an unconventional charge-to-spin conversion in WTe2, which is primarily forbidden by the crystal symmetry of the system. Such a large spin polarization can be possible in WTe2 due to a reduced crystal symmetry combined with its large spin Berry curvature, spin–orbit interaction with a novel spin-texture of the Fermi states. A robust and practical method is demonstrated for electrical creation and detection of such a spin polarization using both charge-to-spin conversion and its inverse phenomenon and utilized it for efficient spin injection and detection in the graphene channel up to room temperature. These findings open opportunities for utilizing topological Weyl materials as nonmagnetic spin sources in all-electrical van der Waals spintronic circuits and for low-power and high-performance nonvolatile spintronic technologies.
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| 2. |
- Dankert, André, 1986, et al.
(författare)
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Origin and evolution of surface spin current in topological insulators
- 2018
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Ingår i: Physical Review B. - 2469-9969 .- 2469-9950. ; 97:12
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Tidskriftsartikel (refereegranskat)abstract
- The Dirac surface states of topological insulators offer a unique possibility for creating spin polarized charge currents due to the spin-momentum locking. Here we demonstrate that the control over the bulk and surface contribution is crucial to maximize the charge-to-spin conversion efficiency. We observe an enhancement of the spin signal due to surface-dominated spin polarization while freezin g out the bulk conductivity in semiconducting Bi1.5Sb0.5Te1.7Se1.3 below 100K. Detailed measurements up to room temperature exhibit a strong reduction of the magnetoresistance signal between 2and100K, which we attribute to the thermal excitation of bulk carriers and to the electron-phonon coupling in the surface states. The presence and dominance of this effect up to room temperature is promising for spintronic science and technology.
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| 3. |
- Hoque, Anamul Md, 1988, et al.
(författare)
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All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature
- 2021
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Ingår i: Communications Physics. - : Springer Science and Business Media LLC. - 2399-3650. ; 4:1
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Tidskriftsartikel (refereegranskat)abstract
- The ability to engineer new states of matter and control their spintronic properties by electric fields is at the heart of future information technology. Here, we report a gate-tunable spin-galvanic effect in van der Waals heterostructures of graphene with a semimetal of molybdenum ditelluride at room temperature due to an efficient spin-charge conversion process. Measurements in different device geometries with control over the spin orientations exhibit spin-switch and Hanle spin precession behavior, confirming the spin origin of the signal. The control experiments with the pristine graphene channels do not show any such signals. We explain the experimental spin-galvanic signals by theoretical calculations considering the spin-orbit induced spin-splitting in the bands of the graphene in the heterostructure. The calculations also reveal an unusual spin texture in graphene heterostructure with an anisotropic out-of-plane and in-plane spin polarization. These findings open opportunities to utilize graphene-based heterostructures for gate-controlled spintronic devices.
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| 4. |
- Hoque, Anamul Md, 1988, et al.
(författare)
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Charge-spin conversion in layered semimetal TaTe2 and spin injection in van der Waals heterostructures
- 2020
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Ingår i: Physical Review Research. - 2643-1564. ; 2:3
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Tidskriftsartikel (refereegranskat)abstract
- A spin-polarized current source using nonmagnetic layered materials is promising for next-generation all-electrical spintronic science and technology. Here we electrically created spin polarization in a layered semimetal TaTe2 via the charge-spin conversion process. Using a hybrid device of TaTe2 in a van der Waals heterostructure with graphene, the spin polarization in TaTe2 is efficiently injected and detected by nonlocal spin-switch, Hanle spin precession, and inverse spin Hall effect measurements. Systematic experiments at different bias currents and gate voltages in a vertical geometry prove the TaTe2 as a nonmagnetic spin source at room temperature. These findings demonstrate the possibility of making an all-electrical spintronic device in a two-dimensional van der Waals heterostructure, which can be essential building blocks in energy-efficient spin-orbit technology.
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| 5. |
- Irfan, Bushra, et al.
(författare)
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Surface dominated magnetotransport in Bi 2 Te 2.15 Se 0.85 topological insulator
- 2018
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 124:21
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Tidskriftsartikel (refereegranskat)abstract
- Topological insulators (TIs) represent a new state of matter possessing an attractive surface spin texture with possible applications in quantum computation and spintronics. The growth of prototypical TIs such as Bi 2Te 3 and Bi 2Se 3 still remains a major challenge, because of vacancies and defects leading to an unintentional doping of the crystals creating a parallel conduction channel in the bulk. Here, we synthesized the Bi 2Te 2.15Se 0.85 (BTS) TI using a modified Bridgeman technique. Magnetotransport studies at different angles and temperatures of the device made on thin (BTS) flakes reveal the 2D nature of the weak antilocalization signal and surface dominated transport properties at low temperatures.
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| 6. |
- Karpiak, Bogdan, 1992, et al.
(författare)
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Magnetic proximity in a van der Waals heterostructure of magnetic insulator and graphene
- 2020
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Ingår i: 2D Materials. - : IOP Publishing. - 2053-1583. ; 7:1
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Tidskriftsartikel (refereegranskat)abstract
- Engineering 2D material heterostructures by combining the best of different materials in one ultimate unit can offer a plethora of opportunities in condensed matter physics. Here, in the van der Waals heterostructures of the ferromagnetic insulator Cr2Ge2Te6 and graphene, our observations indicate an out-of-plane proximity-induced ferromagnetic exchange interaction in graphene. The perpendicular magnetic anisotropy of Cr2Ge2Te6 results in significant modification of the spin transport and precession in graphene, which can be ascribed to the proximity-induced exchange interaction. Furthermore, the observation of a larger lifetime for perpendicular spins in comparison to the in-plane counterpart suggests the creation of a proximity-induced anisotropic spin texture in graphene. Our experimental results and density functional theory calculations open up opportunities for the realization of proximity-induced magnetic interactions and spin filters in 2D material heterostructures and can form the basic building blocks for future spintronic and topological quantum devices.
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| 7. |
- Khokhriakov, Dmitrii, 1991, et al.
(författare)
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Gate-tunable spin-galvanic effect in graphene-topological insulator van der Waals heterostructures at room temperature
- 2020
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Ingår i: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723 .- 2041-1723. ; 11:1
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Tidskriftsartikel (refereegranskat)abstract
- Unique electronic spin textures in topological states of matter are promising for emerging spin-orbit driven memory and logic technologies. However, there are several challenges related to the enhancement of their performance, electrical gate-tunability, interference from trivial bulk states, and heterostructure interfaces. We address these challenges by integrating two-dimensional graphene with a three-dimensional topological insulator (TI) in van der Waals heterostructures to take advantage of their remarkable spintronic properties and engineer proximity-induced spin-charge conversion phenomena. In these heterostructures, we experimentally demonstrate a gate-tunable spin-galvanic effect (SGE) at room temperature, allowing for efficient conversion of a non-equilibrium spin polarization into a transverse charge current. Systematic measurements of SGE in various device geometries via a spin switch, spin precession, and magnetization rotation experiments establish the robustness of spin-charge conversion in the Gr-TI heterostructures. Importantly, using a gate voltage, we reveal a strong electric field tunability of both amplitude and sign of the spin-galvanic signal. These findings provide an efficient route for realizing all-electrical and gate-tunable spin-orbit technology using TIs and graphene in heterostructures, which can enhance the performance and reduce power dissipation in spintronic circuits.
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| 8. |
- Khokhriakov, Dmitrii, 1991
(författare)
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Graphene spin circuits and spin-orbit phenomena in van der Waals heterostructures with topological insulators
- 2021
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Spintronics offers an alternative approach to conventional charge-based information processing by using the electron spin for next-generation non-volatile memory and logic technologies. To realize such technologies, it is necessary to develop spin-polarized current sources, spin interconnects, charge-to-spin conversion processes, and gate-tunable spintronic functionalities. The recently emerged two-dimensional (2D) and topological materials represent a promising platform to realize such spin-based phenomena. Due to its small spin-orbit coupling (SOC), graphene was predicted to preserve electron spin coherence for a long time, making it an ideal material for spin communication. In contrast, topological insulators (TIs) have high SOC and develop a nontrivial band structure with insulating bulk but conducting spin-polarized surface states. Combining these materials in van der Waals heterostructures has been predicted to give rise to unique proximity-induced spin-orbit phenomena that may be used for electrical control of spin polarization. In this thesis, we experimentally prove that the large-area chemical vapor deposited (CVD) graphene is an excellent material choice for the realization of robust spin interconnects, which are capable of spin communication over channel lengths exceeding 34 μm. Utilizing such graphene, we realize a spin summation operation in multiterminal devices and employ it to construct a prototype spin majority logic gate operating with pure spin currents. In topological insulators, we electrically detect the spin-momentum locking and reveal how the bulk and surface conducting channels affect the charge-to-spin conversion efficiency. Finally, by combining graphene and TIs in hybrid devices, we confirm the emergence of a strong proximity-induced SOC with a Rashba spin texture in graphene. We further show that in such heterostructures a spin-charge conversion capability is induced in graphene via the spin-galvanic effect at room temperature and reveal its strong tunability in magnitude and sign by the gate voltage. These findings demonstrate the robust performance of graphene as a spin interconnect for emerging spin-logic architectures and present all-electrical and gate-tunable spintronic devices based on graphene-TI heterostructures, paving the way for next-generation spin-based computing.
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| 9. |
- Khokhriakov, Dmitrii, 1991, et al.
(författare)
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Multifunctional Spin Logic Operations in Graphene Spin Circuits
- 2022
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Ingår i: Physical Review Applied. - 2331-7019. ; 18:6
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Tidskriftsartikel (refereegranskat)abstract
- Spin-based computing, combining logic and nonvolatile magnetic memory, is promising for emerg-ing information technologies. However, the realization of a universal spin logic operation, representing a reconfigurable building block with all-electrical spin-current communication, has so far remained chal-lenging. Here, we experimentally demonstrate reprogrammable all-electrical multifunctional spin logic operations in a nanoelectronic device architecture, utilizing graphene buses for spin communication and mixing and nanomagnets for writing and reading information at room temperature. This device realizes a multistate spin-majority logic operation, which is reconfigured to achieve (N)AND, (N)OR, and XNOR Boolean operations, depending on the magnetization of inputs. The results are in good agreement with the predictions from a spin-circuit model, providing an experimental demonstration of a spin-based logic unit that takes advantage of the vector nature of spin, as opposed to conventional scalar charge-based devices. These spin logic operations in large-area graphene are fully compatible with industrial fabrication pro-cesses and represent a promising platform for scalable all-electric spin-based logic-in-memory computing architecture.
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| 10. |
- Khokhriakov, Dmitrii, 1991, et al.
(författare)
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Robust Spin Interconnect with Isotropic Spin Dynamics in Chemical Vapor Deposited Graphene Layers and Boundaries
- 2020
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Ingår i: ACS Nano. - : American Chemical Society (ACS). - 1936-086X .- 1936-0851. ; 14:11, s. 15864-15873
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Tidskriftsartikel (refereegranskat)abstract
- The utilization of large-area graphene grown by chemical vapor deposition (CVD) is crucial for the development of scalable spin interconnects in all-spin-based memory and logic circuits. However, the fundamental influence of the presence of multilayer graphene patches and their boundaries on spin dynamics has not been addressed yet, which is necessary for basic understanding and application of robust spin interconnects. Here, we report universal spin transport and dynamic properties in specially devised single layer, bilayer, and trilayer graphene channels and their layer boundaries and folds that are usually present in CVD graphene samples. We observe uniform spin lifetime with isotropic spin relaxation for spins with different orientations in graphene layers and their boundaries at room temperature. In all of the inhomogeneous graphene channels, the spin lifetime anisotropy ratios for spins polarized out-of-plane and in-plane are measured to be close to unity. Our analysis shows the importance of both Elliott-Yafet and D'yakonov-Perel' mechanisms with an increasing role of the latter mechanism in multilayer channels. These results of universal and isotropic spin transport on large-area inhomogeneous CVD graphene with multilayer patches and their boundaries and folds at room temperature prove its outstanding spin interconnect functionality, which is beneficial for the development of scalable spintronic circuits.
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