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- Cho, Nam-Hyuk, et al.
(författare)
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The Orientia tsutsugamushi genome reveals massive proliferation of conjugative type IV secretion system and host–cell interaction genes
- 2007
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Ingår i: Proceedings of the National Academy of Sciences of the United States of America. - : Proceedings of the National Academy of Sciences. - 0027-8424 .- 1091-6490. ; 104:19, s. 7981-7986
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Tidskriftsartikel (refereegranskat)abstract
- Scrub typhus is caused by the obligate intracellular rickettsia Orientia tsutsugamushi (previously called Rickettsia tsutsugamushi). The bacterium is maternally inherited in trombicuid mites and transmitted to humans by feeding larvae. We report here the 2,127,051-bp genome of the Boryong strain, which represents the most highly repeated bacterial genome sequenced to date. The repeat density of the scrub typhus pathogen is 200-fold higher than that of its close relative Rickettsia prowazekii, the agent of epidemic typhus. A total of 359 tra genes for components of conjugative type IV secretion systems were identified at 79 sites in the genome. Associated with these are >200 genes for signaling and host–cell interaction proteins, such as histidine kinases, ankyrin-repeat proteins, and tetratrico peptide-repeat proteins. Additionally, the O. tsutsugamushi genome contains >400 transposases, 60 phage integrases, and 70 reverse transcriptases. Deletions and rearrangements have yielded unique gene combinations as well as frequent pseudogenization in the tra clusters. A comparative analysis of the tra clusters within the genome and across strains indicates sequence homogenization by gene conversion, whereas complexity, diversity, and pseudogenization are acquired by duplications, deletions, and transposon integrations into the amplified segments. The results suggest intragenomic duplications or multiple integrations of a massively proliferating conjugative transfer system. Diversifying selection on host–cell interaction genes along with repeated population bottlenecks may drive rare genome variants to fixation, thereby short-circuiting selection for low complexity in bacterial genomes.
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| 2. |
- Jeong, Heesu, et al.
(författare)
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Room-Temperature-Grown amorphous Indium-Tin-Silicon-Oxide thin film as a new electron transporting layer for perovskite solar cells
- 2022
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Ingår i: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 581
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Tidskriftsartikel (refereegranskat)abstract
- We report the amorphous quaternary oxide, indium-tin-silicon-oxide (ITSO), thin film as a new electron transport layer (ETL) for perovskite solar cells (PSCs). ITSO thin films are grown by magnetron co-sputtering indium-tin-oxide (ITO) and silicon oxide (SiO2) on commercial transparent conducting oxide (TCO) thin films at room temperature. As Si content increases (0-53.8 at%) the optical bandgap increases by approximately 1.3 eV and the electrical resistivity increases by six orders mainly because of the carrier concentration decrease. Consequently, the ITSO electronic structure depends largely on Si content. PSCs employing ITSO thin films as ETLs were fabricated to evaluate the effect of Si content on device performances. Si content influenced the shunt and series resistance. The optimized device was obtained using an ITSO film with 33.0 at% Si content, exhibiting 14.50% power-conversion efficiency. These results demonstrate that ITSO films are promising for developing efficient PSCs by optimizing the growing process and/or In/Sn/Si/O compositions. This approach can reduce PSC manufacturing process time and costs if ITO and ITSO are grown together by continuous sequential sputtering in a dual gun (ITO and SiO2) chamber.
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