| 1. |
- Son, Ora, et al.
(författare)
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ATHB12, an ABA-Inducible Homeodomain-Leucine Zipper (HD-Zip) Protein of Arabidopsis, Negatively Regulates the Growth of the Inflorescence Stem by Decreasing the Expression of a Gibberellin 20-Oxidase Gene
- 2010
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Ingår i: Plant and Cell Physiology. - : Oxford University Press (OUP). - 0032-0781 .- 1471-9053. ; 51:9, s. 1537-1547
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Tidskriftsartikel (refereegranskat)abstract
- Arabidopsis thaliana homeobox 12 (ATHB12) is rapidly induced by ABA and water stress. A T-DNA insertion mutant of ATHB12 with a reduced level of ATHB12 expression in stems had longer inflorescence stems and reduced sensitivity to ABA during germination. A high level of transcripts of gibberellin 20-oxidase 1 (GA20ox1), a key enzyme in the synthesis of gibberellins, was detected in athb12 stems, while transgenic lines overexpressing ATHB12 (A12OX) had a reduced level of GA20ox1 in stems. Consistent with these data, ABA treatment of wild-type plants resulted in decreased GA20ox1 expression whereas ABA treatment of the athb12 mutant gave rise to slightly decreased GA20ox1 expression. Retarded stem growth in 3-week-old A12OX plants was rescued by exogenous GA(9), but not by GA(12), and less GA(9) was detected in A12OX stems than in wild-type stems. These data imply that ATHB12 decreases GA20ox1 expression in stems. On the other hand, the stems of A12OX plants grew rapidly after the first 3 weeks, so that they were almost as high as wild-type plants at about 5 weeks after germination. We also found changes in the stems of transgenic plants overexpressing ATHB12, such as alterations of expression GA20ox and GA3ox genes, and of GA(4) levels, which appear to result from feedback regulation. Repression of GA20ox1 by ATHB12 was confirmed by transfection of leaf protoplasts. ABA-treated protoplasts also showed increased ATHB12 expression and reduced GA20ox1 expression. These findings all suggest that ATHB12 negatively regulates the expression of a GA 20-oxidase gene in inflorescence stems.
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| 2. |
- Hwang, Sunbin, et al.
(författare)
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All-Solid-State Organic Schmitt Trigger Implemented by Twin Two-in-One Ferroelectric Memory Transistors
- 2020
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Ingår i: Advanced Electronic Materials. - : WILEY. - 2199-160X. ; 6
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Tidskriftsartikel (refereegranskat)abstract
- Although there have been many attempts to replace conventional inorganic electronics with organic materials that can be mass produced at low cost, few organic electronic filters to increase immunity to electrical noise have been reported thus far. Conventional Schmitt triggers or their inverters are used in many electronic circuits as versatile electronic noise filters. However, it is challenging to manufacture organic electronic systems with complex circuitry. In this study, a simple, all-solid-state organic Schmitt trigger consisting of twin two-in-one organic ferroelectric memory transistors with the same chemical compositions and device dimensions but different threshold voltages is introduced. Threshold voltages and hysteresis in the two-in-one devices can be controlled by polarization switching as demonstrated in a previous study. Hysteresis of a ferroelectric p-type depletion load inverter can be achieved using twin two-in-one devices when the sweep voltage is higher than the critical gate voltages. This facilitates inverter characteristics at two different threshold voltages, and realizing a Schmitt trigger. Finally, based on simulation program with integrated circuit emphasis (SPICE) simulation, guidelines are proposed on how to design organic Schmitt triggers with p- or n-type materials and ferroelectric or charge-trapping mechanisms to achieve inverting or non-inverting characteristics.
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| 3. |
- Hwang, Sunbin, et al.
(författare)
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Two-in-One Device with Versatile Compatible Electrical Switching or Data Storage Functions Controlled by the Ferroelectricity of P(VDF-TrFE) via Photocrosslinking
- 2019
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Ingår i: ACS Applied Materials and Interfaces. - : AMER CHEMICAL SOC. - 1944-8244 .- 1944-8252. ; 11:28, s. 25358-25368
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Tidskriftsartikel (refereegranskat)abstract
- Organic electronics demand new platforms that can make integrated circuits and undergo mass production while maintaining diverse functions with high performance. The field-effect transistor has great potential to be a multifunctional device capable of sensing, data processing, data storage, and display. Currently, transistor-based devices cannot be considered intrinsic multifunctional devices because all installed functions are mutually coupled. Such incompatibilities are a crucial barrier to developing an all-in-one multifunctional device capable of driving each function individually. In this study, we focus on the decoupling of electric switching and data storage functions in an organic ferroelectric memory transistor. To overcome the incompatibility of each function, the high permittivity needed for electrical switching and the ferroelectricity needed for data storage become compatible by restricting the motion of poly(vinylidene fluoride-trifluoroethylene) via photocrosslinking with bis-perfluorobenzoazide. The two-in-one device consisting of a photocrosslinked ferroelectric layer exhibits reversible and individual dual-functional operation as a typical transistor with nonvolatile memory. Moreover, a p-MOS depletion load inverter composed of the two transistors with different threshold voltages is also demonstrated by simply changing only one of the threshold voltages by polarization switching. We believe that the two-in-one device will be considered a potential component of integrated organic logic circuits, including memory, in the future.
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| 4. |
- Kang, Minji, et al.
(författare)
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Light-sensitive charge storage medium with spironaphthooxazine molecule-polymer blends for dual-functional organic phototransistor memory
- 2020
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Ingår i: Organic electronics. - : ELSEVIER. - 1566-1199 .- 1878-5530. ; 78
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Tidskriftsartikel (refereegranskat)abstract
- Organic phototransistor memory is considered as a promising optoelectronic device owing to its multifunctionality. However, due to the poor reliability of each function and the complexity of the device structure, it is necessary to optimize the thin-film process of functional materials when constructing multiple functions into a single device. Here, we demonstrate a dual-functional device that is both a working memory transistor and a phototransistor by incorporating photochromic spironaphthooxazine molecules into an organic insulating layer. The photochmmic molecules in the polymer matrix not only exhibit nonvolatile charge storage properties similar to nano-floating gates but also feature a reversible electronic band structure upon alternating irradiation with ultraviolet and visible light, which makes the device function as both an electrical memory transistor and a phototransistor. Furthermore, the photoresponsive charge trap layer in the demonstrated device leads to excellent memory performance under both dark and light conditions, which includes a large memory window (-56 V), stable endurance cycles (amp;gt;10(2)), and good retention characteristics (amp;gt;10(4) s). Our findings suggest an alternative strategy to realize organic multifunctional nonvolatile memories.
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