| 1. |
- Joffrin, E., et al.
(författare)
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Overview of the JET preparation for deuterium-tritium operation with the ITER like-wall
- 2019
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Ingår i: Nuclear Fusion. - : IOP Publishing. - 1741-4326 .- 0029-5515. ; 59:11
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Forskningsöversikt (refereegranskat)abstract
- For the past several years, the JET scientific programme (Pamela et al 2007 Fusion Eng. Des. 82 590) has been engaged in a multi-campaign effort, including experiments in D, H and T, leading up to 2020 and the first experiments with 50%/50% D-T mixtures since 1997 and the first ever D-T plasmas with the ITER mix of plasma-facing component materials. For this purpose, a concerted physics and technology programme was launched with a view to prepare the D-T campaign (DTE2). This paper addresses the key elements developed by the JET programme directly contributing to the D-T preparation. This intense preparation includes the review of the physics basis for the D-T operational scenarios, including the fusion power predictions through first principle and integrated modelling, and the impact of isotopes in the operation and physics of D-T plasmas (thermal and particle transport, high confinement mode (H-mode) access, Be and W erosion, fuel recovery, etc). This effort also requires improving several aspects of plasma operation for DTE2, such as real time control schemes, heat load control, disruption avoidance and a mitigation system (including the installation of a new shattered pellet injector), novel ion cyclotron resonance heating schemes (such as the three-ions scheme), new diagnostics (neutron camera and spectrometer, active Alfven eigenmode antennas, neutral gauges, radiation hard imaging systems...) and the calibration of the JET neutron diagnostics at 14 MeV for accurate fusion power measurement. The active preparation of JET for the 2020 D-T campaign provides an incomparable source of information and a basis for the future D-T operation of ITER, and it is also foreseen that a large number of key physics issues will be addressed in support of burning plasmas.
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| 4. |
- Armakavicius, Nerijus, et al.
(författare)
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Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies
- 2017
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Ingår i: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 421, s. 357-360
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Tidskriftsartikel (refereegranskat)abstract
- Cavity-enhanced optical Hall effect at terahertz (THz) frequencies is employed to determine the free charge carrier properties in epitaxial graphene (EG) with different number of layers grown by high-temperature sublimation on 4H-SiC(0001). We find that one monolayer (ML) EG possesses p-type conductivity with a free hole concentration in the low 1012 cmￜￜￜ2 range and a free hole mobility parameter as high as 1550 cm2/Vs. We also find that 6 ML EG shows n-type doping behavior with a much lower free electron mobility parameter of 470 cm2/Vs and an order of magnitude higher free electron density in the low 1013 cmￜￜￜ2 range. The observed differences are discussed. The cavity-enhanced THz optical Hall effect is demonstrated to be an excellent tool for contactless access to the type of free charge carriers and their properties in two-dimensional materials such as EG.
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| 5. |
- Armakavicius, Nerijus, 1989-, et al.
(författare)
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Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect
- 2024
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Ingår i: APL Materials. - : AIP Publishing. - 2166-532X. ; 12:2
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Tidskriftsartikel (refereegranskat)abstract
- Electron effective mass is a fundamental material parameter defining the free charge carrier transport properties, but it is very challenging to be experimentally determined at high temperatures relevant to device operation. In this work, we obtain the electron effective mass parameters in a Si-doped GaN bulk substrate and epitaxial layers from terahertz (THz) and mid-infrared (MIR) optical Hall effect (OHE) measurements in the temperature range of 38-340 K. The OHE data are analyzed using the well-accepted Drude model to account for the free charge carrier contributions. A strong temperature dependence of the electron effective mass parameter in both bulk and epitaxial GaN with values ranging from (0.18 +/- 0.02) m(0) to (0.34 +/- 0.01) m(0) at a low temperature (38 K) and room temperature, respectively, is obtained from the THz OHE analysis. The observed effective mass enhancement with temperature is evaluated and discussed in view of conduction band nonparabolicity, polaron effect, strain, and deviations from the classical Drude behavior. On the other hand, the electron effective mass parameter determined by MIR OHE is found to be temperature independent with a value of (0.200 +/- 0.002) m(0). A possible explanation for the different findings from THz OHE and MIR OHE is proposed. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/)
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| 6. |
- Armakavicius, Nerijus, et al.
(författare)
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Electron effective mass in In0.33Ga0.67N determined by mid-infrared optical Hall effect
- 2018
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Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 112:8
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Tidskriftsartikel (refereegranskat)abstract
- Mid-infrared optical Hall effect measurements are used to determine the free charge carrier parameters of an unintentionally doped wurtzite-structure c-plane oriented In0.33Ga0.67N epitaxial layer. Room temperature electron effective mass parameters of m(perpendicular to)* = (0.205 +/- 0.013) m(0) and m(parallel to)* = (0.204 +/- 0.016) m(0) for polarization perpendicular and parallel to the c-axis, respectively, were determined. The free electron concentration was obtained as (1.7 +/- 0.2) x 10(19) cm(-3). Within our uncertainty limits, we detect no anisotropy for the electron effective mass parameter and we estimate the upper limit of the possible effective mass anisotropy as 7%. We discuss the influence of conduction band nonparabolicity on the electron effective mass parameter as a function of In content. The effective mass parameter is consistent with a linear interpolation scheme between the conduction band mass parameters in GaN and InN when the strong nonparabolicity in InN is included. The In0.33Ga0.67N electron mobility parameter was found to be anisotropic, supporting previous experimental findings for wurtzite-structure GaN, InN, and AlxGa1-xN epitaxial layers with c-plane growth orientation. Published by AIP Publishing.
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| 7. |
- Armakavicius, Nerijus, et al.
(författare)
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Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect
- 2024
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Ingår i: Materials. - : MDPI. - 1996-1944. ; 17:13
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Tidskriftsartikel (refereegranskat)abstract
- Group-III nitrides have transformed solid-state lighting and are strategically positioned to revolutionize high-power and high-frequency electronics. To drive this development forward, a deep understanding of fundamental material properties, such as charge carrier behavior, is essential and can also unveil new and unforeseen applications. This underscores the necessity for novel characterization tools to study group-III nitride materials and devices. The optical Hall effect (OHE) emerges as a contactless method for exploring the transport and electronic properties of semiconductor materials, simultaneously offering insights into their dielectric function. This non-destructive technique employs spectroscopic ellipsometry at long wavelengths in the presence of a magnetic field and provides quantitative information on the charge carrier density, sign, mobility, and effective mass of individual layers in multilayer structures and bulk materials. In this paper, we explore the use of terahertz (THz) OHE to study the charge carrier properties in group-III nitride heterostructures and bulk material. Examples include graded AlGaN channel high-electron-mobility transistor (HEMT) structures for high-linearity devices, highlighting the different grading profiles and their impact on the two-dimensional electron gas (2DEG) properties. Next, we demonstrate the sensitivity of the THz OHE to distinguish the 2DEG anisotropic mobility parameters in N-polar GaN/AlGaN HEMTs and show that this anisotropy is induced by the step-like surface morphology. Finally, we present the temperature-dependent results on the charge carrier properties of 2DEG and bulk electrons in GaN with a focus on the effective mass parameter and review the effective mass parameters reported in the literature. These studies showcase the capabilities of the THz OHE for advancing the understanding and development of group-III materials and devices.
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| 8. |
- Armakavicius, Nerijus, et al.
(författare)
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Properties of two-dimensional electron gas in AlGaN/GaN HEMT structures determined by cavity-enhanced THz optical Hall effect
- 2016
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Ingår i: Physica Status Solidi C-Current Topics in Solid State Physics, Vol 13 No 5-6. - : Wiley-VCH Verlagsgesellschaft. ; , s. 369-373
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Konferensbidrag (refereegranskat)abstract
- In this work we employ terahertz (THz) ellipsometry to determine two-dimensional electron gas (2DEG) density, mobility and effective mass in AlGaN/GaN high electron mobility transistor structures grown on 4H-SiC substrates. The effect of the GaN interface exposure to low-flow-rate trimethylaluminum (TMA) on the 2DEG properties is studied. The 2DEG effective mass and sheet density are determined tobe in the range of 0.30-0.32m0 and 4.3-5.5×1012 cm–2, respectively. The 2DEG effective mass parameters are found to be higher than the bulk effective mass of GaN, which is discussed in view of 2DEG confinement. It is shown that exposure to TMA flow improves the 2DEG mobility from 2000 cm2/Vs to values above 2200 cm2/Vs. A record mobility of 2332±61 cm2/Vs is determined for the sample with GaN interface exposed to TMA for 30 s. This improvement in mobility is suggested to be due to AlGaN/GaN interface sharpening causing the reduction of interface roughness scattering of electrons in the 2DEG.
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| 9. |
- Berne, Olivier, et al.
(författare)
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PDRs4All : A JWST Early Release Science Program on Radiative Feedback from Massive Stars
- 2022
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Ingår i: Publications of the Astronomical Society of the Pacific. - : IOP Publishing. - 0004-6280 .- 1538-3873. ; 134:1035
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Tidskriftsartikel (refereegranskat)abstract
- Massive stars disrupt their natal molecular cloud material through radiative and mechanical feedback processes. These processes have profound effects on the evolution of interstellar matter in our Galaxy and throughout the universe, from the era of vigorous star formation at redshifts of 1-3 to the present day. The dominant feedback processes can be probed by observations of the Photo-Dissociation Regions (PDRs) where the far-ultraviolet photons of massive stars create warm regions of gas and dust in the neutral atomic and molecular gas. PDR emission provides a unique tool to study in detail the physical and chemical processes that are relevant for most of the mass in inter- and circumstellar media including diffuse clouds, proto-planetary disks, and molecular cloud surfaces, globules, planetary nebulae, and star-forming regions. PDR emission dominates the infrared (IR) spectra of star-forming galaxies. Most of the Galactic and extragalactic observations obtained with the James Webb Space Telescope (JWST) will therefore arise in PDR emission. In this paper we present an Early Release Science program using the MIRI, NIRSpec, and NIRCam instruments dedicated to the observations of an emblematic and nearby PDR: the Orion Bar. These early JWST observations will provide template data sets designed to identify key PDR characteristics in JWST observations. These data will serve to benchmark PDR models and extend them into the JWST era. We also present the Science-Enabling products that we will provide to the community. These template data sets and Science-Enabling products will guide the preparation of future proposals on star-forming regions in our Galaxy and beyond and will facilitate data analysis and interpretation of forthcoming JWST observations.
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