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  • Knoedler, Moritz, et al. (author)
  • Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy
  • 2017
  • In: Crystal Growth and Design. - : American Chemical Society (ACS). - 1528-7483 .- 1528-7505. ; 17:12, s. 6297-6302
  • Journal article (peer-reviewed)abstract
    • We report on the structural characterization of GaAs nanowires integrated on Si(001) by template-assisted selective epitaxy. The nanowires were grown in lateral SiO2 templates along [110] with varying V/III ratios and temperatures using metal-organic chemical vapor deposition. The nanowires have been categorized depending on the growth facets which typically consisted of (110) and (111)B planes. Nanowires exhibiting a (111)B growth facet were found to have high density planar defects for all growth conditions investigated. However, GaAs nanowires with a single (110) growth facet were grown without the formation of planar stacking faults, resulting in a pure zinc blende crystal.
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Borg, Mattias (1)
Rossell, Marta D. (1)
Riel, Heike (1)
Moselund, Kirsten E. (1)
Schmid, Heinz (1)
Wirths, Stephan (1)
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Bologna, Nicolas (1)
Knoedler, Moritz (1)
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University
Lund University (1)
Language
English (1)
Research subject (UKÄ/SCB)
Engineering and Technology (1)
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