| 1. |
- Bogdanowicz, Janusz, et al.
(författare)
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Light absorption in conical silicon particles
- 2013
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Ingår i: Optics Express. - 1094-4087. ; 21:3, s. 3891-3896
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Tidskriftsartikel (refereegranskat)abstract
- The problem of the absorption of light by a nanoscale dielectric cone is discussed. A simplified solution based on the analytical Mie theory of scattering and absorption by cylindrical objects is proposed and supported by the experimental observation of sharply localized holes in conical silicon tips after high-fluence irradiation. This study reveals that light couples with tapered objects dominantly at specific locations, where the local radius corresponds to one of the resonant radii of a cylindrical object, as predicted by Mie theory.
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| 2. |
- Chen, Q., et al.
(författare)
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Highly Tensile-Strained Self-Assembled Ge Quantum Dots on InP Substrates for Integrated Light Sources
- 2021
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Ingår i: ACS Applied Nano Materials. - : American Chemical Society (ACS). - 2574-0970. ; 4:1, s. 897-906
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Tidskriftsartikel (refereegranskat)abstract
- Highly tensile-strained Ge quantum dots (TS-Ge-QDs) emitting structures with different size were successfully grown on InP substrates by molecular beam epitaxy. Dislocation-free TS-Ge-QDs were observed by transmission electron microscopy. Finite element modeling indicates a maximum tensile strain of 4.5% in the Ge QDs, which is much larger than the required strain to achieve direct band gap conversion of Ge based on theoretical prediction. Photoluminescence (PL) from a direct band-gap-like transition of TS-Ge-QDs with a peak energy of 0.796 eV was achieved and confirmed by the etch depth-dependent PL, temperature-dependent PL, and excitation-power-dependent PL. In addition, a strong defect-related peak of 1 eV was observed at room temperature. The band structure of the TS-Ge-QDs emitting structures was calculated to support the experimental results of PL spectra. Achieving PL from direct band-gap-like transitions of TS-Ge-QDs provides encouraging evidence of this promising highly tensile strained semiconductor-nanostructure-based platform for future photonics applications such as integrated light sources.
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| 3. |
- Hakkarainen, Teemu, et al.
(författare)
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Te incorporation and activation as n-type dopant in self-catalyzed GaAs nanowires
- 2019
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Ingår i: Physical Review Materials. - 2475-9953. ; 3:8
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Tidskriftsartikel (refereegranskat)abstract
- Dopant atoms can be incorporated into nanowires either via the vapor-liquid-solid mechanism through the catalyst droplet or by the vapor-solid growth on the sidewalls. Si is a typical n-type dopant for GaAs, but in nanowires it often suffers from a strongly amphoteric nature in the vapor-liquid-solid process. This issue can be avoided by using Te, which is a promising but less common alternative for n-type doping of GaAs nanowires. Here, we present a detailed investigation of Te-doped self-catalyzed GaAs nanowires. We use several complementary experimental techniques, such as atom probe tomography, off-axis electron holography, micro-Raman spectroscopy, and single-nanowire transport characterization, to assess the Te concentration, the free-electron concentration, and the built-in potential in Te-doped GaAs nanowires. By combing the experimental results with a theoretical model, we show that Te atoms are mainly incorporated by the vapor-liquid-solid process through the Ga droplet, which leads to both axial and radial dopant gradients due to Te diffusion inside the nanowires and competition between axial elongation and radial growth of nanowires. Furthermore, by comparing the free-electron concentration from Raman spectroscopy and the Te-atom concentrations from atom probe tomography, we show that the activation of Te donor atoms is 100% at a doping level of 4×1018cm-3, which is a significant result in terms of future device applications.
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| 4. |
- Koelling, Sebastian, et al.
(författare)
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Characteristics of cross-sectional atom probe analysis on semiconductor structures
- 2011
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Ingår i: Ultramicroscopy. - : Elsevier BV. - 0304-3991 .- 1879-2723. ; 111:6, s. 540-545
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Tidskriftsartikel (refereegranskat)abstract
- The laser-assisted Atom Probe has been proposed as a metrology tool for next generation semiconductor technologies requiring sub-nm spatial resolution. In order to assess its potential for the analysis of three-dimensional semiconductor structures like FinFETs, we have studied the Atom Probes lateral resolution on a silicon, silicon–germanium multilayer structure. We find that the interactions of the laser with the semiconductor materials in the sample distort the sample surface. This results in transient errors of the measured dimensions of the structure. The deformation of the sample furthermore leads to a degradation of the lateral resolution. In the experiments presented in this paper, the Atom Probe reaches a lateral resolution of 1-1.8 nm/decade. In this paper we will discuss the reasons for the distortions of the tip and demonstrate that with the present state of data reconstruction severe quantification errors limit its applicability for the quantitative analysis of heterogeneous semiconductor structures. Our experiments show that reconstruction algorithms taking into account the time dependent nanostructure of the tip shape are required to arrive at accurate results.
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| 5. |
- Koelling, Sebastian, et al.
(författare)
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In-situ observation of non-hemispherical tip shape formation during laser-assisted atom probe tomography
- 2011
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Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 109:10, s. 104909-
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Tidskriftsartikel (refereegranskat)abstract
- It is shown by SEM imaging of the tip and by observing the emission pattern of the evaporated atoms that laser assisted evaporation in an atom probe can lead to nonhemispherical tip shapes and time-dependent nonuniform emission. We have investigated this nonuniformity by observing the change in field of view when using laser wavelengths of 515 nm and 343 nm on silicon. The change is monitored in situ by 0.5 nm thick silicon oxide. We demonstrate that the field of view can easily be changed by more than 10 nm and that the apparent oxide layer thickness can deviate substantially from its correct value. The dependence of the tip shape deformations and the reconstruction artifacts on the laser wavelength are explained through simulations of the laser-tip interaction and nonhomogeneous heating effects.
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| 6. |
- Nakamura, Hisao, et al.
(författare)
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Probing embedded topological modes in bulk-like GeTe-Sb2Te3 heterostructures
- 2020
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Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322. ; 10
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Tidskriftsartikel (refereegranskat)abstract
- The interface between topological and normal insulators hosts metallic states that appear due to the change in band topology. While topological states at a surface, i.e., a topological insulator-air/vacuum interface, have been studied intensely, topological states at a solid-solid interface have been less explored. Here we combine experiment and theory to study such embedded topological states (ETSs) in heterostructures of GeTe (normal insulator) and Sb 2Te 3 (topological insulator). We analyse their dependence on the interface and their confinement characteristics. First, to characterise the heterostructures, we evaluate the GeTe-Sb2Te3 band offset using X-ray photoemission spectroscopy, and chart the elemental composition using atom probe tomography. We then use first-principles to independently calculate the band offset and also parametrise the band structure within a four-band continuum model. Our analysis reveals, strikingly, that under realistic conditions, the interfacial topological modes are delocalised over many lattice spacings. In addition, the first-principles calculations indicate that the ETSs are relatively robust to disorder and this may have practical ramifications. Our study provides insights into how to manipulate topological modes in heterostructures and also provides a basis for recent experimental findings [Nguyen et al. Sci. Rep. 6, 27716 (2016)] where ETSs were seen to couple over thick layers.
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