| 1. |
- Heiler, Jonah, et al.
(författare)
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Spectral stability of V2 centres in sub-micron 4H-SiC membranes
- 2024
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Ingår i: NPJ QUANTUM MATERIALS. - : NATURE PORTFOLIO. - 2397-4648. ; 9:1
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Tidskriftsartikel (refereegranskat)abstract
- Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences. However, recent efforts towards maximising the photonic efficiency via integration into nanophotonic structures proved to be challenging due to reduced spectral stabilities. Here, we provide a large-scale systematic investigation on silicon vacancy centres in thin silicon carbide membranes with thicknesses down to 0.25 mu m. Our membrane fabrication process involves a combination of chemical mechanical polishing, reactive ion etching, and subsequent annealing. This leads to highly reproducible membranes with roughness values of 3-4 A, as well as negligible surface fluorescence. We find that silicon vacancy centres show close-to lifetime limited optical linewidths with almost no signs of spectral wandering down to membrane thicknesses of similar to 0.7 mu m. For silicon vacancy centres in thinner membranes down to 0.25 mu m, we observe spectral wandering, however, optical linewidths remain below 200 MHz, which is compatible with spin-selective excitation schemes. Our work clearly shows that silicon vacancy centres can be integrated into sub-micron silicon carbide membranes, which opens the avenue towards obtaining the necessary improvements in photon extraction efficiency based on nanophotonic structuring.
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| 2. |
- Krumrein, Marcel, et al.
(författare)
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Precise Characterization of a Waveguide Fiber Interface in Silicon Carbide
- 2024
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Ingår i: ACS Photonics. - : AMER CHEMICAL SOC. - 2330-4022.
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Tidskriftsartikel (refereegranskat)abstract
- Spin-active optical emitters in silicon carbide are excellent candidates toward the development of scalable quantum technologies. However, efficient photon collection is challenged by undirected emission patterns from optical dipoles, as well as low total internal reflection angles due to the high refractive index of silicon carbide. Based on recent advances with emitters in silicon carbide waveguides, we now demonstrate a comprehensive study of nanophotonic waveguide-to-fiber interfaces in silicon carbide. We find that across a large range of fabrication parameters, our experimental collection efficiencies remain above 90%. Further, by integrating silicon vacancy color centers into these waveguides, we demonstrate an overall photon count rate of 181 kilo-counts per second, which is an order of magnitude higher compared to standard setups. We also quantify the shift of the ground state spin states due to strain fields, which can be introduced by waveguide fabrication techniques. Finally, we show coherent electron spin manipulation with waveguide-integrated emitters with state-of-the-art coherence times of T-2 similar to 42 mu s. The robustness of our methods is very promising for quantum networks based on multiple orchestrated emitters.
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