| 1. |
- Gelczuk, L., et al.
(författare)
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Bi-induced acceptor level responsible for partial compensation of native free electron density in InP1-xBix dilute bismide alloys
- 2016
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Ingår i: Journal of Physics D: Applied Physics. - : IOP Publishing. - 1361-6463 .- 0022-3727. ; 49:11
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Tidskriftsartikel (refereegranskat)abstract
- Deep level transient spectroscopy (DLTS) has been applied to study electron and hole traps in InPBi alloys with 2.2 and 2.4% Bi grown by molecular beam epitaxy. One donor-like trap with the activation energy of 0.45-0.47 eV and one acceptor-like trap with activation energy of 0.08 eV have been identified in DLTS measurements. For the reference sample (InP grown at the same temperature), the deep donor trap has also been observed, while the acceptor trap was not detected. According to the literature, the deep donor level found in InP(Bi) at 0.45-0.47 eV below the conduction band has been attributed to the isolated P-In defect, while the second trap, which is observed only for Bi containing samples at 0.08 eV above the valence band can be attributed to Bi clusters in InPBi. This acceptor level was proposed to be responsible for the observed partial compensation of native free electron density in InPBi layers. It is also shown that the deep donor traps are active in photoluminescence (PL). A strong radiative recombination between donor traps and the valence band are observed in PL spectra at energy 0.6-0.8 eV, i.e. similar to 0.47 eV below the energy gap of InPBi, which is determined by contactless electroreflectance.
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| 2. |
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| 3. |
- Yue, L., et al.
(författare)
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Structural and optical properties of GaSbBi/GaSb quantum wells [Invited]
- 2018
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Ingår i: Optical Materials Express. - 2159-3930. ; 8:4, s. 893-900
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Tidskriftsartikel (refereegranskat)abstract
- GaSbBi/GaSb quantum wells (QWs) with Bi content up to 10.1% were grown using molecular beam epitaxy. High crystalline quality and clear interfaces were confirmed by high resolution transmission electron microscopy. The Bi distribution was investigated using energy dispersive X-ray spectroscopy. Room temperature photoluminescence (PL) reveals that the peak energy redshifts at a rate of 32 meV/Bi%, consistent with the theoretical predication using the 8-band kp model. From the temperature dependent PL, it was found that the temperature-insensitivity of the transition from the GaSbBi QW improved with increasing Bi content.
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