| 1. |
- Briley, Chad, et al.
(författare)
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Effects of annealing and conformal alumina passivation on anisotropy and hysteresis of magneto-optical properties of cobalt slanted columnar thin films
- 2017
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Ingår i: Applied Surface Science. - : ELSEVIER SCIENCE BV. - 0169-4332 .- 1873-5584. ; 421, s. 320-324
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Tidskriftsartikel (refereegranskat)abstract
- We present magneto-optical dielectric tensor data of cobalt and cobalt oxide slanted columnar thin films obtained by vector magneto-optical generalized ellipsometry. Room-temperature hysteresis magnetization measurements were performed in longitudinal and polar Kerr geometries on samples prior to and after a heat treatment process with and without a conformal Al2O3 passivation coating. The samples have been characterized by generalized ellipsometry, scanning electron microscopy, and Raman spectroscopy in conjuncture with density functional theory. We observe strongly anisotropic hysteresis behaviors, which depend on the nanocolumn and magnetizing field orientations. We find that deposited cobalt films that have been exposed to heat treatment and subsequent atmospheric oxidation into Co3O4, when not conformally passivated, reveal no measurable magneto-optical properties while cobalt films with passivation coatings retain highly anisotropic magneto-optical properties (C) 2016 Published by Elsevier B.V.
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| 2. |
- Hilfiker, Matthew, et al.
(författare)
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Anisotropic dielectric function, direction dependent bandgap energy, band order, and indirect to direct gap crossover in α-(AlxGa1−x)2O3 (0≤?≤10≤x≤1)
- 2022
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 121:5
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Tidskriftsartikel (refereegranskat)abstract
- Mueller matrix spectroscopic ellipsometry is applied to determine anisotropic optical properties for a set of single-crystal rhombohedral structure alpha-(AlxGa1-x)(2)O-3 thin films (0 <= x <= 1). Samples are grown by plasma-assisted molecular beam epitaxy on m-plane sapphire. A critical-point model is used to render a spectroscopic model dielectric function tensor and to determine direct electronic band-to-band transition parameters, including the direction dependent two lowest-photon energy band-to-band transitions associated with the anisotropic bandgap. We obtain the composition dependence of the direction dependent two lowest band-to-band transitions with separate bandgap bowing parameters associated with the perpendicular (b(Eg,⊥) = 1.31 eV) and parallel (b(Eg,||) = 1.61 eV) electric field polarization to the lattice c direction. Our density functional theory calculations indicate a transition from indirect to direct characteristics between alpha-Ga2O3 and alpha-Al2O3, respectively, and we identify a switch in band order where the lowest band-to-band transition occurs with polarization perpendicular to c in alpha-Ga2O3 whereas for alpha-Al2O3 the lowest transition occurs with polarization parallel to c. We estimate that the change in band order occurs at approximately 40% Al content. Additionally, the characteristic of the lowest energy critical point transition for polarization parallel to c changes from M-1 type in alpha-Ga2O3 to M-0 type van Hove singularity in alpha-Al2O3.
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| 3. |
- Hilfiker, Matthew, et al.
(författare)
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Anisotropic dielectric functions, band-to-band transitions, and critical points in alpha-Ga2O3
- 2021
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Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 118:6
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Tidskriftsartikel (refereegranskat)abstract
- We use a combined generalized spectroscopic ellipsometry and density functional theory approach to determine and analyze the anisotropic dielectric functions of an alpha -Ga2O3 thin film. The sample is grown epitaxially by plasma-assisted molecular beam epitaxy on m-plane sapphire. Generalized spectroscopic ellipsometry data from multiple sample azimuths in the spectral range from 0.73eV to 8.75eV are simultaneously analyzed. Density functional theory is used to calculate the valence and conduction band structure. We identify, for the indirect-bandgap material, two direct band-to-band transitions with M-0-type van Hove singularities for polarization perpendicular to the c axis, E 0 , perpendicular to = 5.46 ( 6 ) eV and E 0 , perpendicular to = 6.04 ( 1 ) eV, and one direct band-to-band transition with M-1-type van Hove singularity for polarization parallel to E 0 , | | = 5.44 ( 2 ) eV. We further identify excitonic contributions with a small binding energy of 7meV associated with the lowest ordinary transition and a hyperbolic exciton at the M-1-type critical point with a large binding energy of 178meV.
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| 4. |
- Hilfiker, Matthew, et al.
(författare)
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Dielectric function tensor (1.5 eV to 9.0 eV), anisotropy, and band to band transitions of monoclinic -(AlxGa1-x)(2)O-3 (x 0.21) films
- 2019
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Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 114:23
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Tidskriftsartikel (refereegranskat)abstract
- A set of monoclinic -(AlxGa1-x)(2)O-3 films coherently grown by plasma-assisted molecular beam epitaxy onto (010)-oriented -Ga2O3 substrates for compositions x0.21 is investigated by generalized spectroscopic ellipsometry at room temperature in the spectral range of 1.5eV-9.0eV. We present the composition dependence of the excitonic and band to band transition energy parameters using a previously described eigendielectric summation approach for -Ga2O3 from the study by Mock et al. All energies shift to a shorter wavelength with the increasing Al content in accordance with the much larger fundamental band to band transition energies of Al2O3 regardless of crystal symmetry. The observed increase in the lowest band to band transition energy is in excellent agreement with recent theoretical predictions. The most important observation is that charge confinement in heterostructures will strongly depend on the growth condition due to the strongly anisotropic properties of the band to band transitions.
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| 5. |
- Hilfiker, Matthew, et al.
(författare)
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Elevated temperature spectroscopic ellipsometry analysis of the dielectric function, exciton, band-to-band transition, and high-frequency dielectric constant properties for single-crystal ZnGa2O4
- 2022
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 120:13
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Tidskriftsartikel (refereegranskat)abstract
- We report the elevated temperature (22 degrees C <= T <= 600 degrees C) dielectric function properties of melt grown single crystal ZnGa2O4 using a spectroscopic ellipsometry approach. A temperature dependent Cauchy dispersion analysis was applied across the transparent spectrum to determine the high-frequency index of refraction yielding a temperature dependent slope of 3.885(2) x 10(-5)K(-1). A model dielectric function critical point analysis was applied to examine the dielectric function and critical point transitions for each temperature. The lowest energy M-0-type critical point associated with the direct bandgap transition in ZnGa2O4 is shown to red-shift linearly as the temperature is increased with a subsequent slope of -0.72(4) meV K-1. Furthermore, increasing the temperature results in a reduction of the excitonic amplitude and increase in the exciton broadening akin to exciton evaporation and lifetime shortening. This matches current theoretical understanding of excitonic behavior and critically provides justification for an anharmonic broadened Lorentz oscillator to be applied for model analysis of excitonic contributions.
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| 6. |
- Hilfiker, Matthew, et al.
(författare)
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High-frequency and below bandgap anisotropic dielectric constants in alpha-(AlxGa1-x)(2)O-3 (0 <= x <= 1)
- 2021
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 119:9
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Tidskriftsartikel (refereegranskat)abstract
- A Mueller matrix spectroscopic ellipsometry approach was used to investigate the anisotropic dielectric constants of corundum alpha-(AlxGa1-x)(2)O-3 thin films in their below bandgap spectral regions. The sample set was epitaxially grown using plasma-assisted molecular beam epitaxy on m-plane sapphire. The spectroscopic ellipsometry measurements were performed at multiple azimuthal angles to resolve the uniaxial dielectric properties. A Cauchy dispersion model was applied, and high-frequency dielectric constants are determined for polarization perpendicular (epsilon(infinity,perpendicular to)) and parallel (epsilon(infinity,parallel to)) to the thin film c-axis. The optical birefringence is negative throughout the composition range, and the overall index of refraction substantially decreases upon incorporation of Al. We find small bowing parameters of the highfrequency dielectric constants with b(perpendicular to) = 0:386 and b(parallel to) = 0:307. Published under an exclusive license by AIP Publishing.
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| 7. |
- Hilfiker, Matthew, et al.
(författare)
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Zinc gallate spinel dielectric function, band-to-band transitions, and Gamma-point effective mass parameters
- 2021
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Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 118:13
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Tidskriftsartikel (refereegranskat)abstract
- We determine the dielectric function of the emerging ultrawide bandgap semiconductor ZnGa2O4 from the near-infrared (0.75eV) into the vacuum ultraviolet (8.5eV) spectral regions using spectroscopic ellipsometry on high quality single crystal substrates. We perform density functional theory calculations and discuss the band structure and the Brillouin zone Gamma-point band-to-band transition energies, their transition matrix elements, and effective band mass parameters. We find an isotropic effective mass parameter (0.24m(e)) at the bottom of the Gamma-point conduction band, which equals the lowest valence band effective mass parameter at the top of the highly anisotropic and degenerate valence band (0.24m(e)). Our calculated band structure indicates the spinel ZnGa2O4 is indirect, with the lowest direct transition at the Gamma-point. We analyze the measured dielectric function using critical-point line shape functions for a three-dimensional, M-0-type van Hove singularity, and we determine the direct bandgap with an energy of 5.27(3) eV. In our model, we also consider contributions from Wannier-Mott type excitons with an effective Rydberg energy of 14.8meV. We determine the near-infrared index of refraction from extrapolation (1.91) in very good agreement with results from recent infrared ellipsometry measurements (root epsilon(infinity)= 1.94) [M. Stokey, Appl. Phys. Lett. 117, 052104 (2020)]. Published under license by AIP Publishing.
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| 8. |
- Kilic, Ufuk, et al.
(författare)
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Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques
- 2018
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Ingår i: Journal of Applied Physics. - : AMER INST PHYSICS. - 0021-8979 .- 1089-7550. ; 124:11
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Tidskriftsartikel (refereegranskat)abstract
- WO3 thin films were grown by atomic layer deposition and spectroscopic ellipsometry data gathered in the photon energy range of 0.72-8.5 eV, and from multiple samples were utilized to determine the frequency dependent complex-valued isotropic dielectric function for WO3. We employ a critical-point model dielectric function analysis and determine a parameterized set of oscillators and compare the observed critical-point contributions with the vertical transition energy distribution found within the band structure of WO3 calculated by the density functional theory. The surface roughness was investigated using atomic force microscopy, and compared with the effective roughness as seen by the spectroscopic ellipsometry. Published by AIP Publishing.
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| 9. |
- Kilic, Ufuk, et al.
(författare)
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Tunable plasmonic resonances in Si-Au slanted columnar heterostructure thin films
- 2019
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Ingår i: Scientific Reports. - : NATURE PUBLISHING GROUP. - 2045-2322. ; 9
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Tidskriftsartikel (refereegranskat)abstract
- We report on fabrication of spatially-coherent columnar plasmonic nanostructure superlattice-type thin films with high porosity and strong optical anisotropy using glancing angle deposition. Subsequent and repeated depositions of silicon and gold lead to nanometer-dimension subcolumns with controlled lengths. We perform generalized spectroscopic ellipsometry measurements and finite element method computations to elucidate the strongly anisotropic optical properties of the highly-porous Si-Au slanted columnar heterostructures. The occurrence of a strongly localized plasmonic mode with displacement pattern reminiscent of a dark quadrupole mode is observed in the vicinity of the gold subcolumns. We demonstrate tuning of this quadrupole-like mode frequency within the near-infrared spectral range by varying the geometry of Si-Au slanted columnar heterostructures. In addition, coupled-plasmon-like and inter-band transition-like modes occur in the visible and ultra-violet spectral regions, respectively. We elucidate an example for the potential use of Si-Au slanted columnar heterostructures as a highly porous plasmonic sensor with optical read out sensitivity to few parts-per-million solvent levels in water.
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| 10. |
- Knight, Sean, et al.
(författare)
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Electron effective mass in Sn-doped monoclinic single crystal beta-gallium oxide determined by mid-infrared optical Hall effect
- 2018
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 112:1
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Tidskriftsartikel (refereegranskat)abstract
- The isotropic average conduction band minimum electron effective mass in Sn-doped monoclinic single crystal beta-Ga2O3 is experimentally determined by the mid-infrared optical Hall effect to be (0.2846 +/- 0.013)m(0) combining investigations on (010) and ((2) over bar 01) surface cuts. This result falls within the broad range of values predicted by theoretical calculations for undoped beta-Ga2O3. The result is also comparable to recent density functional calculations using the Gaussian-attenuation-Perdew-Burke-Ernzerhof hybrid density functional, which predict an average effective mass of 0.267m(0). Within our uncertainty limits, we detect no anisotropy for the electron effective mass, which is consistent with most previous theoretical calculations. We discuss upper limits for possible anisotropy of the electron effective mass parameter from our experimental uncertainty limits, and we compare our findings with recent theoretical results. Published by AIP Publishing.
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